• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.165-168
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical and crystallographic properties of AZO thin film with $O_2$ gas flow ratio have been investigated. The thickness, transmittance, crystal structure and resistivity of AZO thin film were measured by a-step, UV-VIS spectrometer, XRD and four-point probe, respectively. As a result AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-1}\Omega-cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.203-208
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• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.37-43
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• 2012

We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.13-17
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• 2023

Functional transparent electrode was achieved by metal oxide-metal-Metal oxide (OMO) structure. Tailoring of metal oxide and metal layers, optically transparent and electrically excellent OMO films were investigated. Silver (Ag) is adopted for the metal layer and Ag oxide (AgO) is reactively formed by flowing O₂ gas during the sputtering process. This spontaneous AgO formation from Ag simultaneously provides the good electrical interface with high transparency. Due to the feature of transparent electrode of OMO, it endows the shielding effect (SE) function of electromagnetic interference. Optically transparent and electrically conductive OMO electrode shows the high transmittance (83.7%) and low sheet resistance (6.5 Ω/☐) with SE of 29.54 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.336.2-336.2
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• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1482-1484
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.175-180
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• 2010

The highly conductive polyaniline was synthesized and investigated on the properties of its thin film electrode fabricated by solution process. The transmittance and sheet resistance of the polyaniline thin film of 200 nm thickness were observed in 85% in absorption range above 450 nm and $380P{\Omega}/{\Box}$, respectively. The sheet resistance of the polyaniline was largely varied above $130^{\circ}C$ annealing temperature.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.171-173
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• 2001

ZnO:Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply using ZnO target containing 2wt% of $Al_2O_3$ and Zn metal target. Sputtering was carried out at substrate temperature of R.T. and $200^{\circ}C$ with a DC current of 0.6A, $O_2$ flow rate of $0.1{\sim}0.5$ and thickness $300{\sim}900nm$. ZnO:Al films showed a resistivity as low as $10^{-4}{\Omega}-cm$ and a transmittance above 85 % at wavelength 300 and 800nm.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.