• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.56-56
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• 2018

Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.107-112
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• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.224-227
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• 2015

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.93-97
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• 2009

The nanoporous $F:SnO_2$ materials have been prepared through the controlled hydrolysis of fluoro(2-methylbutan-2-oxy)di(pentan-2,4-dionato)tin followed by thermal treatment at $400-550^{\circ}C$. The main IR features include resonances at 660, 620 and 540 cm-1. From the TG-DTG result, three main mass losses of 6.5, 13.3 and 3.8 at 81, 289 and $490^{\circ}C$ are observed between 50 and $650^{\circ}C$ yielding a final residue of 76.0%. The size of Sn $O_2$ nanoparticles rose from 5 nm to 10-12 nm as the temperature of thermal treatment is increased from 400 to $550^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.217-220
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• 2017

We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.192-192
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• 2010

Transparent Conductive Oxides (TCO) 박막은 지금 까지 산업 전반에 걸쳐 많이 응용되어 사용되어지는 박막 중에 하나이다. 그대표적인 산업은 디스플레이 산업 중 평면디스플레이 산업에서 투명 전극으로 사용하는 LCD 및 터치패널에 사용되는 전극으로 사용되어져 왔다. 현재에는 솔라 셀의 전극 및 기판으로서의 응용이 많이 연구되어지고 있다. 이와 같은, 산업에서 사용되는 투명전극 재료는 낮은 전기적 특성 및 애칭특성이 우수하고 높은 광 투과도를 필요로 하고 있으며, 이러한 특성을 모두 만족하며 가장 우수한 물성을 나타내는 물질이 (Indium Tin Oxide) film이다. 하지만 Indium의 고갈과 희소성에 따른 고가라는 점의 문제로 인해 대체재료로써 부상되고 있는 ZnO의 연구가 활발히 진행되고 있다. 본 연구에서는 투명 전도성 산화물인 ZnO박막과 Al이 도핑된 AZO박막을 저온공정이 가능한 대향 타겟식 스퍼터링 방법(FTS)을 이용하여 산소가스 분압과 Al타겟에 인가되는 Current에 따른 박막의 전기적, 광학적 특성을 파악하여 적용여부에 대해 조사하였다. ZnO박막의 결정성은 유입되는 산소가스의 유량에 따라 증가하며 일정 영역이상에서는 감소하였다. 산소가스 유량이 1.2 sccm일 때 가장 높은 결정성을 얻었다. 또한 산소가스 유량을 1.2 sccm으로 고정시킨 후 Al타겟에 인가되는 Current에 변화를 주었을 때 0.5A에서 가장 낮은 비저항을 얻었다. ZnO박막의 미세구조는 Xray-diffraction method를 이용하여 측정하였고, 산소 분압에 따른 표면조도 분석을 위해 AFM을 사용하였고 Zn와 Oxide bonding의 화학적 분석을 위해 XPS를 이용하여 분석하였다. 또한 전기적 특성은 Hall measurement, 광 투과도는 UV-VIS Spectrometer를 이용하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.169-174
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• 2024

In this study, the structural, electrical, and optical properties of AZO films of various thicknesses are compared. The AZO films were deposited on a glass substrate by FTS (Facing-Target-Sputtering) This research was conducted to find the optimal thickness for Transparent Conductive Oxide (TCO). AZO has suitable properties for TCO such as low resistivity, and high transmittance. Thin films of all thicknesses showed a transmittance of over 80% in the visible light region and electrical properties improved as thickness increased. It was confirmed that the film of 300 nm thick had the best performance due to its low resistivity, and uniform surface. This research is expected to help find optimal conditions in various fields where TCO is used, such as solar cells, displays, and sensors in the future.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.114-119
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• 2016

In this study, we tried to add the conductivity to natural polymer like bacterial cellulose (BC) coated with the conductive polymer PEDOT:PEG, graphene and silver nano-wire (AgNW). Sulfuric acid of 10 to 20% was previously mixed with PEDOT:PEG and then the solution was electron spin-coated on the BC membrane. And then, additive coating with graphene and AgNW were done to improve conductivity, which was examined by hall effect. As the result, we confirmed a considerable improvement of conductivity compared to BC-coated film without sulfuric acid treatment as $2.487{\times}10^{10}$ vs $8.093{\times}10^{15}$ ($1/cm^3$), showing higher electron density with $3.25{\times}10^5$ times. Also, we identified that changed particle type to the polymer type by sulfuric acid using SEM analysis. For FT-IR analysis, it was confirmed that S-O radical ($1200cm^{-1}$) increased in the sulfuric acid treatment than non-treated sulfuric acid. As the method used very small amount of PEDOT:PEG, its transparency could be kept, and pre-treatment process of sulfuric acid will be able to simplify the production process.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.85-91
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• 2005

$SnO_2$ films were prepared at room temperature under a $(CH_3)_4Sn-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD (Electron Cyclotron resonance -Metal Organic Chemical Vapor Deposition) system. The electrical properties of the films were investigated as function of process parameters such as deposition time, microwave power, magnetic current power, magnet/showering/substrate distance and working pressure. An increase in microwave power and magnetic current power brought on $SnO_2$ film formation with low electric resistivity. On the other hand, the effects of process parameters described above on optical properties were insignificant in the range of our experimental scope. The transmittance and reflectance of the films prepared by the ECR-MOCVD exhibited their average values of 93-98% at wave length range of 380-780 nm and 0.1-0.5%, respectively. The grain size of the $SnO_2$ films that are also insensitive with the process parameters were in the range of 20-50 nm. On the basis of experimental data obtained in the present study, electrical resistivity of $7.5{\times}10^{-3}ohm{\cdot}cm$, transmittance of 93%, and reflectance of 0.2% can be taken as optimum values.