• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.465-472
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• 2009

The technologies for improving the capacity of hydrogen storage were investigated and the recent data of hydrogen storage by using various porous carbon materials were summarized. As the media of hydrogen storage, activated carbon, carbon nanotube, expanded graphite and activated carbon fiber were mainly investigated. The hydrogen storage in the carbon materials increased with controlled pore size about 0.6~0.7 nm. In case of catalyst, transition metal and their metal oxide were mainly applied on the surface of carbon materials by doping. Activated carbon is relatively cheap because of its production on a large scale. Carbon nanotube has a space inside and outside of tube for hydrogen storage. In case of graphite, the distance between layers can be extended by intercalation of alkali metals providing the space for hydrogen adsorption. Activated carbon fiber has the high specific surface area and micro pore volume which are useful for hydrogen storage. Above consideration of research, porous carbon materials still can be one of the promising materials for reaching the DOE target of hydrogen storage.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.5
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• pp.196-201
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• 2023

In order to improve the efficiency of the water splitting system for hydrogen energy production, the high overvoltage in the electrochemical reaction caused by the catalyst in the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) must be reduced. Among them, transition metal-based compounds (hydroxide, sulfide, etc.) are attracting attention as catalyst materials to replace currently used precious metals such as platinum. In this study, Ni foam, an inexpensive metal porous material, was used as a support and β-Ni(OH)₂ microcrystals were synthesized through a hydrothermal synthesis process. In addition, changes in the crystal morphology, crystal structure, and water splitting characteristics of β-Ni(OH)₂ microcrystals synthesized by doping Fe to improve electrochemical properties were observed, and applicability as a catalyst in a commercial water electrolysis system was examined.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.56-59
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• 2011

The process conditions for high efficiency industrial crystalline Si solar cells with selective emitter were optimized. In the screen printed solar cells, the sheet resistance must be 50-60V/sq. because of metal contact resistance. But the low sheet resistance causes the increase of the recombination and blue response at the short wavelength. Therefore, the screen printed solar cells with homogeneous emitter have limitations of efficiency, and this means that the selective emitter must be used to improve cell efficiency. This work demonstrates the feasibility of a commercially available selective emitter process, based on screen printing and conventional diffusion process. Now, we improved cell efficiency from 18.29% to18.45% by transition of heavy emitter pattern and shallow emitter doping condition.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.458-464
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• 2021

Tungsten disulfide (WS₂), a typical 2D layerd structure, has received much attention as a pseudocapacitive material because of its high theoretical specific capacity and excellent ion diffusion kinetics. However, WS₂ has critical limits such as poor long-term cycling stability owing to its large volume expansion during cycling and low electrical conductivity. Therefore, to increase the high-rate performance and cycling stability for pseudocapacitors, well-dispersed WS₂ nanoparticles embedded in carbon nanofibers (WS₂-CNFs), including mesopores and S-doping, are prepared by hydrothermal synthesis and sulfurizaiton. These unique nanocomposite electrodes exhibit a high specific capacity (159.6 F g^-1 at 10 mV s^-1), excellent high-rate performance (81.3 F g^-1 at 300 mV s^-1), and long-term cycling stability (55.9 % after 1,000 cycles at 100 mV s^-1). The increased specific capacity is attributed to well-dispersed WS₂ nanoparticles embedded in CNFs that the enlarge active area; the increased high-rate performance is contributed by reduced ion diffusion pathway due to mesoporous CNFs and improved electrical conductivity due to S-doped CNFs; the long-term cycling stability is attributed to the CNFs matrix including WS₂ nanoparticles, which effectively prevent large volume expansion.