Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates |
Kim, Ji Hoon
(School of Electrical Engineering, Korea Univ.)
Hwang, Sung-Min (Compound Semiconductor Devices Research Center, Korea Electronic Technology Institute) Baik, Kwang Hyeon (Dept. of Materials Science and Engineering, Hongik Univ.) Park, Jung Ho (School of Electrical Engineering, Korea Univ.) |
1 | M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, and C. J. Humphreys, "Understanding x-ray diffraction of nonpolar gallium nitride films," J. Appl. Phys., Vol.105, No.11, 113501-1-7 (2009). DOI ScienceOn |
2 | D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett., Vol.53, pp.2173-2716, Nov., 1984. DOI |
3 | T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells," Jpn. J. Appl. Phys., Vol.36, No.4A., pp.L382-385, Apr., 1997. DOI ScienceOn |
4 | A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN," Appl. Phys. Lett., Vol.86, No.3, pp.031901-1-3, Jan., 2005. DOI ScienceOn |
5 | P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, Vol.406, pp.865-868, Aug., 2000. DOI ScienceOn |
6 | M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, "Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire," Appl. Phys. Lett., Vol.81, No.3, pp.469-471, Jul., 2002. DOI ScienceOn |
7 | J. Abell and T. D. Moustakas, "The role of dislocations as nonradiative recombination centers in InGaN quantum wells," Appl. Phys. Lett., Vol.92, No.9, pp.091901-1-3, Mar., 2008. DOI ScienceOn |
8 | H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, "The role of dislocation scattering in n-type GaN films," Appl. Phys. Lett., Vol.73, No.6, pp.821-3, Aug., 1998. DOI ScienceOn |
9 | Y. T. Rebane, Y. G. Shreter, and M. Albrecht, "Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN," Phys. Status Solidi a, Vol.164, No.1, pp.141-144, Nov., 1997. DOI |
10 | N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, "Scattering of electrons at threading dislocations in GaN," J. Appl. Phys., Vol.83, No.7, pp.3656-3659, Apr., 1997. |
11 | P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, "Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence," J. Appl. Phys., Vol.107, No.4, pp.043524-1-5, Feb., 2010. DOI |
12 | C. Stampfl and C. G. Van de Walle, "Energetics and electronic structure of stacking faults in AlN, GaN, and InN," Phys. Rev. B, Vol.57, No.24, pp.R15052-15055, Jun., 1998. DOI |
13 | M. McLaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal Plane Stacking-Fault Related Anisotropyin X-ray Rocking Curve Widths of m-Plane GaN," Jpn. J. Appl. Phys., Vol.47, No.7, pp.5429-5431, Jul., 2008. DOI |
14 | P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, "Emission properties of a-plane GaN grown by metal-organic chemicalvapor deposition," J. Appl. Phys., Vol.98, No.9, pp.093519-1-7, Nov., 2005. DOI ScienceOn |
15 | M. McLaurin and J. S. Speck, "p-type conductionin stacking-fault-free m-plane GaN," 2007 Phys. Status Solidi RRL, Vol.1, No.3, pp.110-112, Mar., 2007. DOI ScienceOn |
16 | K. H. Baik, Y. G. Seo, S.-K. Hong, S. Lee, J. Kim, J.-S. Son, and S.-M. Hwang, "Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11-20) GaN Light-Emitting Diodes on Sapphire Substrate," IEEE Photonics Technol. Lett., Vol.22, No.9, pp.595-597, May., 2010. DOI |
17 | C. F. Johnston, M. J. Kappers, and C. J. Humphreys, "Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method," J. Appl. Phys., Vol.105, No.7, pp.073102-1-5, Apr., 2009. DOI |
18 | J. H. Kim, S.-M. Hwang, Y. G. Seo, K. H. Baik, and J. H. Park, "Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers," Semicond. Sci. Technol., Vol.28, No.8, pp.085007-1-8, Aug., 2013. DOI |
19 | F. Yun, Y.-T. Moon, Y. Fu, K. Zhu, U. Ozgur, H. Morkoc, C. K. Inoki, T. S. Kuan, A. Sagar, and R. M. Feenstra, "Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy," J. Appl. Phys., Vol.98, No.12, pp.123502-1-8, Dec., 2005. DOI |
20 | J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, "Improvements in a-plane GaN crystal quality by a two-step growth process," Appl. Phys. Lett., Vol.92, No.10. pp.-1-3, Mar., 2008. |
21 | D. N. Zakharov, Z. L. Weber, B. Wagner, Z. J. Reitmeier, E. A. Preble, and R. F. Davis, "Structural TEM study of nonpolar a-plane gallium nitride grown on (11-20) 4H-SiC by organometallic vapor phase epitaxy," Phys. Rev. B, Vol.71, No.23, pp.235334-1-9, Jun., 2005. DOI |
22 | H. Wang, C. Chen, Z. Gong, J. Zhang, M. Gaevski, M. Su, J. Yang, and M. A. Khan, "Anisotropic structural characteristics of (110) GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire," Appl. Phys. Lett. Vol.84, No.4, pp.499-501, Jan., 2004. DOI ScienceOn |
23 | R. N. Kyutt, M. P. Shcheglov, V. V. Ratnikov, and A. E. Kalmykov, "X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN layers grown on r-plane sapphire," Phys. Status Solidi a, Vol.206, No. 8, pp.1757-1760, Jun., 2009. DOI |
24 | T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, and H. P. Strunk, "Defect structure of epitaxial GaNfilms determined by transmissionelectron microscopy and triple-axis X-ray diffractometry," Philos. Mag. A, Vol.77, No.4, pp.1013-1025, Aug., 1998. DOI ScienceOn |
25 | B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the xray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., Vol.68, No.5, pp.643-645, Jan., 1996. DOI |
26 | Q. Sun, T.-S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, "Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction," Jpn. J. Appl. Phys., Vol.48, No. pp.071002-1-4, Jul., 2009. DOI |
27 | R. Chierchia, T. Bottcher, H. Heinke, S. Einfeldt, S. Figge, and D. Hommel, "Microstructure of heteroepitaxial GaN revealed by x-ray diffraction," J. Appl. Phys., Vol.93, No.11, pp.8918-8925, Jun., 2003. DOI ScienceOn |
28 | C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. P. Paskov, B. Monemar, U. Behn, B. A. Haskell, P. T. Fini, and S. Nakamura, "Stress and wafer bending of-plane GaN layers on-plane sapphire substrates," J. Appl. Phys., Vol.100, No.10, pp.103511-1-11, Nov., 2005. |