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http://dx.doi.org/10.5573/JSTS.2014.14.5.557

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates  

Kim, Ji Hoon (School of Electrical Engineering, Korea Univ.)
Hwang, Sung-Min (Compound Semiconductor Devices Research Center, Korea Electronic Technology Institute)
Baik, Kwang Hyeon (Dept. of Materials Science and Engineering, Hongik Univ.)
Park, Jung Ho (School of Electrical Engineering, Korea Univ.)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.5, 2014 , pp. 557-565 More about this Journal
Abstract
We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.
Keywords
Metal organic chemical vapor deposition; non-polar; gallium nitride; stacking faults; X-ray diffraction;
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1 M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, and C. J. Humphreys, "Understanding x-ray diffraction of nonpolar gallium nitride films," J. Appl. Phys., Vol.105, No.11, 113501-1-7 (2009).   DOI   ScienceOn
2 D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett., Vol.53, pp.2173-2716, Nov., 1984.   DOI
3 T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells," Jpn. J. Appl. Phys., Vol.36, No.4A., pp.L382-385, Apr., 1997.   DOI   ScienceOn
4 A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN," Appl. Phys. Lett., Vol.86, No.3, pp.031901-1-3, Jan., 2005.   DOI   ScienceOn
5 P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, Vol.406, pp.865-868, Aug., 2000.   DOI   ScienceOn
6 M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, "Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire," Appl. Phys. Lett., Vol.81, No.3, pp.469-471, Jul., 2002.   DOI   ScienceOn
7 J. Abell and T. D. Moustakas, "The role of dislocations as nonradiative recombination centers in InGaN quantum wells," Appl. Phys. Lett., Vol.92, No.9, pp.091901-1-3, Mar., 2008.   DOI   ScienceOn
8 H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, "The role of dislocation scattering in n-type GaN films," Appl. Phys. Lett., Vol.73, No.6, pp.821-3, Aug., 1998.   DOI   ScienceOn
9 Y. T. Rebane, Y. G. Shreter, and M. Albrecht, "Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN," Phys. Status Solidi a, Vol.164, No.1, pp.141-144, Nov., 1997.   DOI
10 N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, "Scattering of electrons at threading dislocations in GaN," J. Appl. Phys., Vol.83, No.7, pp.3656-3659, Apr., 1997.
11 P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, "Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence," J. Appl. Phys., Vol.107, No.4, pp.043524-1-5, Feb., 2010.   DOI
12 C. Stampfl and C. G. Van de Walle, "Energetics and electronic structure of stacking faults in AlN, GaN, and InN," Phys. Rev. B, Vol.57, No.24, pp.R15052-15055, Jun., 1998.   DOI
13 M. McLaurin, A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal Plane Stacking-Fault Related Anisotropyin X-ray Rocking Curve Widths of m-Plane GaN," Jpn. J. Appl. Phys., Vol.47, No.7, pp.5429-5431, Jul., 2008.   DOI
14 P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, "Emission properties of a-plane GaN grown by metal-organic chemicalvapor deposition," J. Appl. Phys., Vol.98, No.9, pp.093519-1-7, Nov., 2005.   DOI   ScienceOn
15 M. McLaurin and J. S. Speck, "p-type conductionin stacking-fault-free m-plane GaN," 2007 Phys. Status Solidi RRL, Vol.1, No.3, pp.110-112, Mar., 2007.   DOI   ScienceOn
16 K. H. Baik, Y. G. Seo, S.-K. Hong, S. Lee, J. Kim, J.-S. Son, and S.-M. Hwang, "Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11-20) GaN Light-Emitting Diodes on Sapphire Substrate," IEEE Photonics Technol. Lett., Vol.22, No.9, pp.595-597, May., 2010.   DOI
17 C. F. Johnston, M. J. Kappers, and C. J. Humphreys, "Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method," J. Appl. Phys., Vol.105, No.7, pp.073102-1-5, Apr., 2009.   DOI
18 J. H. Kim, S.-M. Hwang, Y. G. Seo, K. H. Baik, and J. H. Park, "Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers," Semicond. Sci. Technol., Vol.28, No.8, pp.085007-1-8, Aug., 2013.   DOI
19 F. Yun, Y.-T. Moon, Y. Fu, K. Zhu, U. Ozgur, H. Morkoc, C. K. Inoki, T. S. Kuan, A. Sagar, and R. M. Feenstra, "Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy," J. Appl. Phys., Vol.98, No.12, pp.123502-1-8, Dec., 2005.   DOI
20 J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, "Improvements in a-plane GaN crystal quality by a two-step growth process," Appl. Phys. Lett., Vol.92, No.10. pp.-1-3, Mar., 2008.
21 D. N. Zakharov, Z. L. Weber, B. Wagner, Z. J. Reitmeier, E. A. Preble, and R. F. Davis, "Structural TEM study of nonpolar a-plane gallium nitride grown on (11-20) 4H-SiC by organometallic vapor phase epitaxy," Phys. Rev. B, Vol.71, No.23, pp.235334-1-9, Jun., 2005.   DOI
22 H. Wang, C. Chen, Z. Gong, J. Zhang, M. Gaevski, M. Su, J. Yang, and M. A. Khan, "Anisotropic structural characteristics of (110) GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire," Appl. Phys. Lett. Vol.84, No.4, pp.499-501, Jan., 2004.   DOI   ScienceOn
23 R. N. Kyutt, M. P. Shcheglov, V. V. Ratnikov, and A. E. Kalmykov, "X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN layers grown on r-plane sapphire," Phys. Status Solidi a, Vol.206, No. 8, pp.1757-1760, Jun., 2009.   DOI
24 T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, and H. P. Strunk, "Defect structure of epitaxial GaNfilms determined by transmissionelectron microscopy and triple-axis X-ray diffractometry," Philos. Mag. A, Vol.77, No.4, pp.1013-1025, Aug., 1998.   DOI   ScienceOn
25 B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the xray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., Vol.68, No.5, pp.643-645, Jan., 1996.   DOI
26 Q. Sun, T.-S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, "Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction," Jpn. J. Appl. Phys., Vol.48, No. pp.071002-1-4, Jul., 2009.   DOI
27 R. Chierchia, T. Bottcher, H. Heinke, S. Einfeldt, S. Figge, and D. Hommel, "Microstructure of heteroepitaxial GaN revealed by x-ray diffraction," J. Appl. Phys., Vol.93, No.11, pp.8918-8925, Jun., 2003.   DOI   ScienceOn
28 C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. P. Paskov, B. Monemar, U. Behn, B. A. Haskell, P. T. Fini, and S. Nakamura, "Stress and wafer bending of-plane GaN layers on-plane sapphire substrates," J. Appl. Phys., Vol.100, No.10, pp.103511-1-11, Nov., 2005.