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http://dx.doi.org/10.4283/JKMS.2005.15.3.181

Carrier-enhanced Ferromagnetism in Cr-doped ZnO  

Sim, Jae-Ho (Department of Materials Science and Engineering, Chungnam National University)
Kim, Hyo-Jin (Department of Materials Science and Engineering, Chungnam National University)
Kim, Do-Jin (Department of Materials Science and Engineering, Chungnam National University)
Ihm, Young-Eon (Department of Materials Science and Engineering, Chungnam National University)
Yoon, Soon-Kil (Department of Materials Science and Engineering, Chungnam National University)
Kim, Hyun-Jung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Choo, Woong-Kil (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Publication Information
Journal of the Korean Magnetics Society / v.15, no.3, 2005 , pp. 181-185 More about this Journal
Abstract
We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.
Keywords
diluted magnetic semiconductors; ZnO; ZnCrO; ferromagnetism; spintronics;
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