• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.221-226
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• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.35-40
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• 2008

Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.196-197
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• 2003

전자의 스핀정보를 이용한 spintronics 기술이 발전하면서 상온 강자성 반도체에 대한 연구가 주목을 각광 받고 있다. 자성반도체에 대한 연구는 diluted magnetic semiconductor(DMS)에 대한 연구로 시작되었다 할 수 있다. 과거 DMS는 II-IV족 또는 III-V족 반도체에 Mn, Cr, Co, Fe 원소들을 도핑 시켜 제작하여 왔으나, 상온 이상에서 강자성 특성을 가지는 DMS을 제작하는 데는 실패하였다. 최근에 Dietl 팀이 mean field 이론을 이용하여 망간이 도핑된 ZnO가 실온이상의 Tc를 가질 수도 있을 것으로 예측하였다.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.350-354
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• 2016

최근 연구 되고 있는 Transition Metal Dichalcogenides(TMD)는 전이금속과 칼코젠족 화합물로, 반도체 소자로써 graphene이 가지고 있던 실질적인 응용의 한계를 극복 할 수 있는 2D 소자로 주목 받고 있다. 본 연구에서는 가장 대표적인 TMD물질인 $MoS_2$를 채널로 가지는 $MoS_2$ FET를 채널의 방향, gate 구조, Equivalent oxide thickness(EOT) 등의 변수에 대하여 시뮬레이션하고, 결과를 종합하여 저전력용 2D FET 모델을 제안하였다.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.241-251
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• 2019

There are several manufacturing techniques for developing thermionic cathodes for vacuum ultraviolet(VUV) ionizers. The triple alkaline earth metal emitters(Ca-Sr-Ba) are formulated as efficient and reliable thermo-electron sources with a great many different compositions for the ionizing devices. We prepare two basic suspensions with different compositions: calcium, strontium and barium. After evaluating the electron-emitting performance for europium, gadolinium, and yttrium-based cathodes mixed with these suspensions, we selected the yttrium for its better performance. Next, another transition metal indium and a lanthanide metal neodymium salt is introduced to two base emitters. These final composite metal emitters are coated on the tungsten filament and then activated to the oxide cathodes by an intentionally programmed calcination process under an ultra-high vacuum(${\sim}10^{-6}torr$). The performance of electron emission of the cathodes is characterized by their anode currents with respect to the addition of each element, In and Nd, and their concentration of cathodes. Compared to both the base cathodes, the electron emission performance of the cathodes containing indium and neodymium decreases. The anode current of the Nd cathode is more markedly degraded than that with In.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.331-337
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• 2015

$LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.3
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• pp.388-393
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• 2010

In recent years the research has been focused on the preparation of special glasses, i.e., chalcogenide and heavy metal oxide ones that can transmit optical radiation above 2 um and also other optical parameters exceed those of silica based glasses. The attention in this paper is focused on chalcogenide glasses, on preparation of high quality base glass, for an application in infrared optical product design and manufacture. The amorphous materials of As-Se and Ge-As-Se chalcogenides were prepared by a standard melt-quenching technique. The compositions were mesaured by ICP-AES and EPMA, and structural and thermal properties were studied through various annealing processes. Several anomalies of glass transition and crystallization were observed in the DSC/DTA/TG results of the chalcogenide glass.

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1187-1192
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• 2000

Ternary (Mo-Ru-Pd) and binary (Mo-Ru, Mo-Pd) alloys have been prepared using an Ar arc melting furnace. Mo and the noble metals, Ru and Pd, are the constituents of metallic insoluble residues, which were found in the early days of post-irradiation studies on uranium oxide fuels. In the present study, the structure of the alloys was evaluated using a powder X-ray diffractometer. Unit cell parameters were determined by least squares refinements of powder X-ray diffraction data. Scanning electron microscopic analyses of the surface of the alloys indicated that surface morphology was dependent on the crystallographic structure as well as its composition. Measurements of the magnetic susceptibility of the alloys showed evidence of superconducting transition from 3 to 9.2 K. Among the ternary and binary alloys, the ${\sigma}-phase$ showed the highest superconducting transition temperature,~9.2 K.