• Title/Summary/Keyword: Transimpedance Amplifier(TIA)

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Multichannel Photoreceiver Arrays for Parallel Optical Interconnects (병렬식 광 인터컨넥트용 멀티채널 수신기 어레이)

  • Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.7 s.337
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    • pp.1-4
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    • 2005
  • A four-channel photoreceiver ways have been realized in a 0.8$\mu$m Si/SiGe HBT technology for the applications of parallel optical interconnects. The receiver array includes four-channel transimpedance amplifiers (TIAs) and p-i-n photodiodes, where the TIAs exploit a common-emitter (CE) input configuration. Measured results demonstrate that the four-channel CE TIA array provides 3.9GHz bandwidth, 62dB$\Omega$ transimpedance gain, 7.5pA/sqrt(Hz) average noise current spectral density, and less than -25dB crosstalk between adjacent channels with 40mW power dissipation.

A Dual-Channel CMOS Transimpedance Amplifier Array with Automatic Gain Control for Unmanned Vehicle LADARs (무인차량 라이다용 CMOS 듀얼채널 자동 이득조절 트랜스임피던스 증폭기 어레이)

  • Hong, Chaerin;Park, Sung Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.5
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    • pp.831-835
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    • 2016
  • In this paper, a dual-channel feed-forward transimpedance(TIA) array is realized in a standard $0.18-{\mu}m$ CMOS technology which exploits automatic gain control function to provide 40-dB input dynamic range for either detecting targets nearby or sensing imminent danger situations. Compared to the previously reported conventional feed-forward TIA, the proposed automatic-gain-control feed-forward TIA(AFF-TIA) extends the input dynamic range 25 dB wider by employing a 4-level automatic gain control circuit. Measured results demonstrate the linearly varying transimpedance gain of 47 to $72dB{\Omega}$, input dynamic range of 1:100, the bandwidth of $${\geq_-}670MHz$$, the equivalent input referred noise current spectral density of 6.9 pA/${\surd}$HZ, the maximum sensitivity of -26.8 dBm for $10^{-12}BER$, and the power consumption of 27.6 mW from a single 1.8-V supply. The dual-channel chip occupies the area of $1.0{\times}0.73mm^2$ including I/O pads.

A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

  • Lee, Juri;Park, Hyung Gu;Kim, In Seong;Pu, YoungGun;Hwang, Keum Cheol;Yang, Youngoo;Lee, Kang-Yoon;Seo, Munkyo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.122-130
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    • 2015
  • This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in $0.13{\mu}m$ complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum $98.1dB{\Omega}$ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is $1.9mm{\times}2.2mm$ for 4-channel. The power dissipation is 47.64 mW/1ch.

Design Optimization of Hybrid-Integrated 20-Gb/s Optical Receivers

  • Jung, Hyun-Yong;Youn, Jin-Sung;Choi, Woo-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.4
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    • pp.443-450
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    • 2014
  • This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

1-Gb/s Readout Amplifier Array for Panoramic Scan LADAR Systems (파노라믹 스캔 라이다용 1-Gb/s 리드아웃 증폭기 어레이)

  • Kim, Dayeong;Park, Sung Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.3
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    • pp.452-456
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    • 2016
  • In this paper, a dual-channel readout amplifier array is realized in a standard $0.18{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode with 0.9 A/W responsivity and a 1.0 Gb/s readout amplifier(ROA). The proposed ROA shares the basic configuration of the previously reported feedforward TIA, except that it exploits a replica input to exclude a low pass filter(LPF), thus reducing chip area and improving integration level, and to efficiently reject common-mode noises. Measured results demonstrate that each channel achieves $70dB{\Omega}$ transimpedance gain, 829 MHz bandwidth, -22 dBm sensitivity for $10^{-9}BER$, -34 dB crosstalk between adjacent channels, and 45 mW power dissipation from a single 1.8 V supply.

A $120-dB{\Omega}$ 8-Gb/s CMOS Optical Receiver Using Analog Adaptive Equalizer (아날로그 어댑티브 이퀄라이저를 이용한 $120-dB{\Omega}$ 8-Gb/s CMOS 광 수신기)

  • Lee, Dong-Myung;Choi, Boo-Young;Han, Jung-Won;Han, Gun-Hee;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.119-124
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    • 2008
  • Transimpedance amplifier(TIA) is the most significant element to determine the performance of the optical receiver, and thus the TIA must satisfy tile design requirements of high gain and wide bandwidth. In f)is paper, we propose a novel single chip optical receiver that exploits an analog adaptive equalizer and a limiting amplifier to enhance the gain and bandwidth performance, respectively. The proposed optical receiver is designed by using a $0.13{\mu}m$ CMOS process and its post-layout simulations show $120dB{\Omgea}$ transimpedance gain and 5.88GHz bandwidth. The chip core occupies the area of $0.088mm^2$, due to utilizing the negative impedance converter circuit rather than using on-chip passive inductors.

CMOS Transimpedance Amplifiers for Gigabit Ethernet Applications (기가비트 이더넷용 CMOS 전치증폭기 설계)

  • Park Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.4 s.346
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    • pp.16-22
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    • 2006
  • Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

Design of a 2.5Gbps CMOS Transimpedance Amplifier for Optical Receivers (광수신기를 위한 2.5Gbps CMOS Transimpedance 증폭기 설계)

  • Jeon, J.H.;Lee, E.Y.;Sim, S.M.;Park, K.Y.;Jeon, S.H.;Yu, C.G.
    • Proceedings of the KIEE Conference
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    • 2008.10b
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    • pp.104-105
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    • 2008
  • 요즘 데이터의 양이 많아지고 마이크로프로세서의 속도가 빨라짐에 따라 광통신이 각광받고 있다. 광통신이란 전류신호를 광 신호로 변환하여 송신하고 광섬유를 통해 전달된 광신호가 포토다이오드를 통해 전류신호로 변환되어 수신하는 통신방법이다. TIA는 이런 광통신의 수신부의 첫 단에 오는 블록으로서 전류신호를 사용가능한 전압신호로 바꾸어주는 역할을 한다. 본 논문에서는 포토다이오드의 커패시턴스 성분을 효과적으로 차단하고 노이즈 특성을 향상시킬 수 있는 방법을 제안하고, 1.8V 0.18um CMOS공정을 사용하여 2.5Gbps TIA 블록을 설계하였다.

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A CMOS Optical Receiver Design for Optical Printed Circuit Board (광PCB용 CMOS 광수신기 설계)

  • Kim Young;Kang Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.7 s.349
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    • pp.13-19
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    • 2006
  • A 5Gb/s cross coupled transimpedance amplifier (TIA) & limiting amp(LA), regulated cascode(RGC) is realized in a 0.18$\mu$m CMOS technology for optical printed circuit board applications. The optical receiver demonstrates $92.8db{\Omega}$ transimpedance and limiting amplifier gain, 5Gb/s bandwidth for 0.5pF photodiode capacitance, and 9.74mW power dissipation from 1.8V, 2.4V supply. Input stage impedance is $50{\Omega}$. The circuit was implemented on an optical PCB, and the 5Gb/s data output signal was measured with a good data eye opening.

4-Channel 2.5-Gb/s/ch CMOS Optical Receiver Array for Active Optical HDMI Cables (액티브 광케이블용 4-채널 2.5-Gb/s/ch CMOS 광 수신기 어레이)

  • Lee, Jin-Ju;Shin, Ji-Hye;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.8
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    • pp.22-26
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    • 2012
  • This paper introduces a 2.5-Gb/s optical receiver implemented in a standard 1P4M 0.18um CMOS technology for the applications of active optical HDMI cables. The optical receiver consists of a differential transimpedance amplifier(TIA), a five-stage differential limiting amplifier(LA), and an output buffer. The TIA exploits the inverter input configuration with a resistive feedback for low noise and power consumption. It is cascaded by an additional differential amplifier and a DC-balanced buffer to facilitate the following LA design. The LA consists of five gain cells, an output buffer, and an offset cancellation circuit. The proposed optical receiver demonstrates $91dB{\Omega}$ transimpedance gain, 1.55 GHz bandwidth even with the large photodiode capacitance of 320 fF, 16 pA/sqrt(Hz) average noise current spectral density within the bandwidth (corresponding to the optical sensitivity of -21.6 dBm for $10^{-12}$ BER), and 40 mW power dissipation from a single 1.8-V supply. Test chips occupy the area of $1.35{\times}2.46mm^2$ including pads. The optically measured eye-diagrams confirms wide and clear eye-openings for 2.5-Gb/s operations.