• 전기학회논문지P
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• 제65권3호
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• pp.210-215
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• 2016

The transient characteristics of the Mg/Air fuel cell were ascribed to the load current, electrolyte concentrations, air electrode area and electrode distance. It was found that transient phenomena occurred in the load current, which is due to activate of the oxidation and reduction reaction process. The transient time increase with the load current increase. The transient characteristics were investigated with regard to internal resistance. The maximum power output analysis was employed in order to explain the delayed action under various experimental conditions. The internal resistances had a significant effect on the transient characteristics. The transient curves thus obtained were in almost agreement with internal resistance characteristics.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.96-100
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• 2017

In this paper, the flux-lock type superconducting fault current limiter (SFCL) using double quench was suggested and its transient current limiting characteristics were analyzed. The suggested flux-lock type SFCL using double quench consists of two magnetically coupled windings and two $high-T_{c}$ superconducting (HTSC) elements connected in series with each winding. To analyze the transient current limiting characteristics of the flux-lock type SFCL using double quench, the short-circuit tests according to the fault angles, which affect the transient component of the fault current right after the fault occurs, were executed. From the comparative analysis for the short-circuit tests at both $0^{\circ}$ and $90^{\circ}$ fault angles, the useful transient current limiting operations of the suggested flux-lock type SFCL through the double or the single quench occurrence were confirmed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 대한전기학회논문지:전력기술부문A
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• 제53권7호
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• pp.397-404
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• 2004

This paper describes a study of transient characteristics in 765kV untransposed transmission lines. As the 765(kV) system can carry bulk power, some severe fault on the system nay cause large system disturbance. The large shunt capacitance and small resistance of 765kv transmission line make various difficulties for its protection. These problems including current difference between sending and receiving terminals on normal power flow, low order harmonic current component in fault current and current transformer saturation due to the long DC time constant of the circuit etc. must be investigated and solved. The analysis of transient characteristics at sending terminal has been carried out for the single phase to ground fault and 3-phase short fault, etc. The load current, charging current in normal condition and line flows, fault current, THD(Total Harmonic Distortion) of harmonics, time constants have been analysed for the 765kV untransposed transmission line systems.

• Journal of Electrical Engineering and Technology
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• 제6권1호
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• pp.48-58
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• 2011

In this paper, an attempt has been made to design the current and speed proportional and integral (PI) regulators of self-commutating current source inverter-fed induction motor drive having capacitors at the machine end and to investigate the transient performance of the same for step changes in reference speed. The mathematical model of the complete drive system is developed in closed loop, and the characteristic equations of the systems are derived using perturbation about steady-state operating point in order to develop the characteristic equations. The D-partition technique is used for finding the stable region in the parametric plane. Frequency scanning technique is used to confirm the stability region. Final selection of the regulator parameters is done by comparing the transient response of the current and speed loops for step variations in reference. The performance of the drive is observed analytically through MATLAB simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1327-1329
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• 2000

The thyristor among the power-semi-conductor elements, which has large current capacity and high voltage, is used widely nowadays. When the thyristor was being used to the long time, this element may be able to arise the system trip caused by changing the characteristic and dropping the performance. Therefore, it would be necessary to analyze the characteristic of element to maintain the stable operation of the system. In oder to analyze this characteristic, it would be need to test forward direction, reverse direction and leakage current by supplying the half-sine wave voltage. Among these testing, transient current condition is generated from the testing of leakage current. This transient current may be the main factor of the error in the precise measurement of leakage current. Therefore, this paper analyzes the relationship between supply voltage and transient current in measuring leakage current of the SCR, and then suggests the condition and cause of transient current as appearing the leakage current in the testing the leakage current.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.839-841
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• 2004

IEC 60044-6 (Requirements for protective current transformers for transient performance) was established to Korea Standard (KS C IEC 60044-6 ; Instrument transformers Part 6 ; Requirements for protective current transformers for transient performance) in December 11, 2003. In this paper, requirements, test items and test methods protective current transformers for transient performance.

• Journal of Electrical Engineering and Technology
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• 제11권3호
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• pp.543-550
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• 2016

The Active Superconducting Current Controller (ASCC) is a new type of Superconducting Fault Current Limiters (SFCL) which can limit the fault current in different modes. It also has the particular abilities of compensating active and reactive powers for electrical networks. In this paper, it is confirmed that the performance of ASCC in different operating modes introduces a limiting impedance in series with the network which can even degrade the transient stability and the operation of the Over-Current Relays (OCR) employed in a power system. In addition, the model of a three-phase ASCC is simulated, and the effect of descriptive modes on the current limiting level is investigated. For the transient stability analysis, a single machine-infinite bus system is tested, and the effect of operation modes is studied based on an equal area criterion obtaining the critical time and the critical angle. Modifying the setting parameters of OCR such as time dial and pick-up current, the protective coordination is also studied in different operating modes.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• 조명전기설비학회논문지
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• 제28권2호
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• pp.1-8
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• 2014

In this paper, SOA Current and Temperature Driver which consisted of LabVIEW programming part capable of current and temperature transient response pattern design, DAQ module for analog voltage in&out, and voltage to current converting chips has realized. The output current(possible to 3A) from the Driver to SOA was clearly constant without ripple and also showed no variance until 1mA unit for a long time operation. The temperature of TEC took several seconds to reach a set temperature, and were maintained stably within ${\pm}^0.1{\circ}C$ for several hours. The proposed Driver can replace the previous high cost SOA Drivers for wavelength swept lasers fully and provides the convenience of transient response design capability for current and temperature.