• 한국결정성장학회지
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• 제27권5호
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• pp.243-248
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• 2017

본 연구에서는 산화주석(IV) 첨가량을 달리하여 동화유약 시편을 제조하고 발색기구를 분석하기 위하여 분광 분석, 결정상 분석, 미세구조 분석을 실시하여 색상과의 상관성을 분석하였다. 산화주석(VI) 첨가량이 증가함에 따라 동화유약의 붉은색은 사라지고 CIEab 값이 감소하여 무채색으로 발색하였다. 산화주석은 유약층에 고르게 분포하여 Cu nuclei가 성장하여 붉은색으로 발색하는 것을 방해하고 기포 주변의 metal Cu와 반응하여 합금을 형성하였다. 이로 인해 산화주석 첨가량이 증가함에 따라 금속 Cu 피크는 사라지고 미세한 $Cu_2O$ 피크만 남게 된다. 산화주석을 3.79 % 첨가하였을 때는 유약에 붉은색을 내는 $Cu_2O$보다 검정색을 나타내는 CuO와 Cassiterite $SnO_2$가 색상에 더 영향을 미치는 것으로 보여진다.

• 대한화학회지
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• 제56권4호
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• pp.484-490
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• 2012

The tin (IV) oxide nanoparticles are prepared by controlled precipitation method and calcined at temperatures of $200-600^{\circ}C$. The prepared $SnO_2$ nanoparticles characterized by XRD patterns, TEM image, IR and UV-Vis spectra. The XRD patterns and TEM image show the tetragonal structure and spherical morphology for $SnO_2$ nanoparticles, respectively. The photocatalytic activity of the prepared $SnO_2$ nanoparticles studied in degradation reaction of methylene blue (MB). The results show the size of nanoparticles, band-gap energy and photocatalytic activity of $SnO_2$ depends on the calcinations temperature. The $SnO_2$ nanoparticles calcined at $500^{\circ}C$ indicated the highest photoreactivity. Also, the zero-valent tin (ZVT) nanoparticles with tetragonal structure are prepared by a reducing agent and used as a catalyst in degradation of MB. In basic pH of 11, the degradation >95% of MB at time 150 min obtained at presence of ZVT nanoparticles.

• 전기학회논문지
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• 제59권1호
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• pp.130-133
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• 2010

Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.55-62
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• 2004

여러 가지 온도와 습도에 따라 Sn의 표면에 형성되는 산화물을 전기화학적 환원방법을 이용해 분석하였다. 전기화학적 방법을 이용하여 금속표면에 형성된 산화물을 환원시킬 때 나타나는 환원전위와 소모된 전하량을 측정하여 표면 산화물의 종류와 양을 정량적으로 분석하였다 우선 전기화학적 환원 방법이 금속 표면 산화물의 분석에 적합한지 알아보기 위해 여러 가지 산화물 분말의 환원 전위와 수소 발생 전위를 측정하였고, 분석을 위한 최적의 전류밀도 값을 구하였다. Sn 표면에 생성된 산화물을 분석한 결과 $85^{\circ}C$의 건조한 환경에서 보다 T/H (Temperature/Humidity, $85^{\circ}C$/$85\%$상대습도)조건에서 SnO가 더 빠르게 성장하였다. 또한 T/H 조건에서 하루가 지난 이후부터는 Sn의 표면 최상층에 매우 얇은 (<10 ${\AA}$) $SnO_2$ 가 형성되어 있는 것을 확인하였다. $150^{\circ}C$에서는 SnO와 $SnO_2$가 같이 존재하는 것을 확인하였다. 또한 XPS와 AES 표면분석을 통하여 환원 실험 결과를 뒷받침하였다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• 한국재료학회지
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• 제21권8호
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• pp.415-418
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• 2011

Tin (IV) dioxide ($SnO_2$) has attracted much attention due to its potential scientific significance and technological applications. $SnO_2$ nanoparticles were prepared under low temperature and pressure conditions via precipitation from a 0.1 M $SnCl_4{\cdot}5H_2O$ solution by slowly adding $NH_4OH$ while rapidly stirring the solution. $SnO_2$ nanoparticles were obtained from the reaction in the temperature range from 130 to $250^{\circ}C$ during 6 h. The microstructure and phase of the synthesized tin oxide particles were studied using XRD and TEM analyses. The average crystalline sizes of the synthesized $SnO_2$ particles were from 5 to 20 nm and they had a narrow distribution. The average crystalline size of the synthesized particles increased as the reaction temperature increased. The crystalline size of the synthesized tin oxide particles decreased with increases in the pH value. The X-ray analysis showed that the synthesized particles were crystalline, and the SAED patterns also indicate that the synthesized $SnO_2$ nanoparticles were crystalline. Furthermore, the morphology of the synthesized $SnO_2$ nanoparticles was as a function of the reaction temperature. The effects of the synthesis parameters, such as the pH condition and reaction temperature, are also discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 전기화학회지
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• 제9권2호
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• pp.59-63
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• 2006

전해코팅 법과 dip-coating 법을 이용해 산화주석(IV)을 티타늄 지지체에 코팅하여, 코팅 방법에 따른 코팅 전극의 물성과 전기화학적 특성에 대해여 연구하였다. HCl 로 전극 에칭 후, nitrate 용액에 $SnCl_2{\cdot}2H_2O$을 용해시켜 pulse technique를 이용하여 전해코팅 하였으며, dip-coating 법 또한 $SnCl_2{\cdot}2H_2O$를 사용하여 1:1V% HCl 용액에 용해시켜 코팅 소결 후 산화주석(IV)코팅 전극을 제작하였다. 두 가지 코팅 방법을 통해 제작된 산화주석(IV)코팅 전극은 전극의 물성을 비교하기 위해 x-ray diffraction (XRD), scanning election microscopy (SEM)를 관찰해보았고, 전기화학적 특성을 평가하기 위해 cyclic voltammetry (CV)를 측정하여 전위창을 비교해 보았다.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.1999-2003
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• 2014

Indium tin oxide ($In_2Sn_{1-x}O_{5-y}$) nanoparticles were synthesized by hydrothermal method from stable indium tin acetylacetone complexes and postannealing at $600^{\circ}C$. The absence of chlorine ions shortened the synthesis process, decreased the particle agglomeration and improved the particle purity. The introduced complexing ligand acetylacetone decreased the obtained nanoparticle size. The improved powder properties accelerated the sintering of the $In_2Sn_{1-x}O_{5-y}$ nanoparticles and reached a relative density of 96.4% when pressureless sintered at $1400^{\circ}C$.

• 대한화학회지
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• 제31권1호
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• pp.102-109
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• 1987

화학증착방법에 의해 dibutyl tin diacetate를 산소와 반응시켜 $SnO_2$박막을 slide glass에 증착시켜 각 조건에 형성된 $SnO_2$박막의 특성을 조사하였다. 본 연구에서 최적증착조건은 기판온도 420$^{\circ}C$, 증착시간 20분으로 나타났으며 증착속도는 증착시간이 증가함에 따라 증가하며 증착시간 25분이후에는 일정해졌으며 판저항의 값도 증착초기에는 감소하나 증착시간 20분이 지나면서 증가하였다. 증착온도 420$^{\circ}C$, 증착시간 20분에 형성된 박막은 두께 4000${\AA}$이며 가시광선 투과율이 90%이며 5800 ohms/${\square}$의 판저항을 가졌다. 그리고 산세척방법에 의해 표면처리한 기판과 반응기체중 수증기의 첨가는 더 좋은 특성의 투명전도성 $SnO_2$박막을 제조하는데 도움이됨을 알았다. 또한 증착막은 작은 구형의 입자들로 이루어져 있다는 것을 주사전자현미경으로 확인하였으며 X-선 회절 실험에 의해 rutile structure(tetragonal)를 갖는다는 것을 알 수 있었다.