• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.243-248
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• 2017

In this study copper glaze samples were prepared with varying amount of tin oxide, and the chromatic characteristics of glazes were explained on the results of spectrophotometric, crystalline phase, and microstructural analyses. The red color of copper glaze was dissipated with the addition of tin oxide and turned into achromatic color due to the decrease of CIEab values. Tin oxide homogeneously distributed in the glaze layer interfered with the red color generation coming from the growth of Cu nuclei, and formed an alloy with metal copper around bubbles. This resulted in the decrease of metal copper peak intensity with minor $Cu_2O$ peak. With the 3.79 % tin oxide addition the glaze was appeared as gray due to the black color CuO and Cassiterite $SnO_2$ phases.

• Journal of the Korean Chemical Society
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• v.56 no.4
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• pp.484-490
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• 2012

The tin (IV) oxide nanoparticles are prepared by controlled precipitation method and calcined at temperatures of $200-600^{\circ}C$. The prepared $SnO_2$ nanoparticles characterized by XRD patterns, TEM image, IR and UV-Vis spectra. The XRD patterns and TEM image show the tetragonal structure and spherical morphology for $SnO_2$ nanoparticles, respectively. The photocatalytic activity of the prepared $SnO_2$ nanoparticles studied in degradation reaction of methylene blue (MB). The results show the size of nanoparticles, band-gap energy and photocatalytic activity of $SnO_2$ depends on the calcinations temperature. The $SnO_2$ nanoparticles calcined at $500^{\circ}C$ indicated the highest photoreactivity. Also, the zero-valent tin (ZVT) nanoparticles with tetragonal structure are prepared by a reducing agent and used as a catalyst in degradation of MB. In basic pH of 11, the degradation >95% of MB at time 150 min obtained at presence of ZVT nanoparticles.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.130-133
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• 2010

Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.55-62
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• 2004

The oxidation of pure Sn and high Pb-Sn alloys was investigated under different oxidizing conditions of temperature and humidity. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. For pure tin, SnO grew faster under humid condition than in dry air at $85^{\circ}C$. A very thin (<10 ${\AA}$) layer of SnO, was formed on the top surface under humid condition. The mixture of SnO and $SnO_2$ was found for oxidation at $150^{\circ}C$. XPS and AES were performed to support the result of oxide reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.415-418
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• 2011

Tin (IV) dioxide ($SnO_2$) has attracted much attention due to its potential scientific significance and technological applications. $SnO_2$ nanoparticles were prepared under low temperature and pressure conditions via precipitation from a 0.1 M $SnCl_4{\cdot}5H_2O$ solution by slowly adding $NH_4OH$ while rapidly stirring the solution. $SnO_2$ nanoparticles were obtained from the reaction in the temperature range from 130 to $250^{\circ}C$ during 6 h. The microstructure and phase of the synthesized tin oxide particles were studied using XRD and TEM analyses. The average crystalline sizes of the synthesized $SnO_2$ particles were from 5 to 20 nm and they had a narrow distribution. The average crystalline size of the synthesized particles increased as the reaction temperature increased. The crystalline size of the synthesized tin oxide particles decreased with increases in the pH value. The X-ray analysis showed that the synthesized particles were crystalline, and the SAED patterns also indicate that the synthesized $SnO_2$ nanoparticles were crystalline. Furthermore, the morphology of the synthesized $SnO_2$ nanoparticles was as a function of the reaction temperature. The effects of the synthesis parameters, such as the pH condition and reaction temperature, are also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.59-63
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• 2006

The study is coated tin(IV) oxide coated on the titanium substrate electrodes by electrodepositon and dip-coating method and studied about that physical and electrochemical characterization by coating methods. After titanium substrate is etched in HCl, electrodespotion is coated $SnCl_2{\cdot}2H_2O$ in nitrate solution by pulse technique, dip-coating method is also used $SnCl_2{\cdot}2H_2O$ in 1;1V% HCl and coated by dipping and annealing process. tin(IV) oxide coated on titanium substrate electrodes by two coating methods are studied x-ray diffraction (XRD), scanning electron microscopy (SEM) to compare physical characterization of electrode and potential window by cyclic voltammetry (CV) to observe electrochemical characterization.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1999-2003
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• 2014

Indium tin oxide ($In_2Sn_{1-x}O_{5-y}$) nanoparticles were synthesized by hydrothermal method from stable indium tin acetylacetone complexes and postannealing at $600^{\circ}C$. The absence of chlorine ions shortened the synthesis process, decreased the particle agglomeration and improved the particle purity. The introduced complexing ligand acetylacetone decreased the obtained nanoparticle size. The improved powder properties accelerated the sintering of the $In_2Sn_{1-x}O_{5-y}$ nanoparticles and reached a relative density of 96.4% when pressureless sintered at $1400^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.31 no.1
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• pp.102-109
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• 1987

Some characteristics of $SnO_2$ film which was deposited on a slide glass substrate, using dibutyl tin diacetate and oxygen, by the chemical vapor deposition were observed. The optimum condition for the preparation of the film was found to be at 420$^{\circ}C$ of substrate temperature for 20 min of deposition. Important optical, electrical, and structural features of the film were examined. It was found that the typical $SnO_2$ film on the untreated substrate was 4000${\AA}$ in thickness, transmitted 90% of the visible liglit, and provided 5800 ohms/${\square}$ of the sheet resistance. It was also found that the surface treatments of the slide glass by acid leaching were beneficial. The film structure was found to be a mixture of polycrystalline tetragonal stannic oxide confirmed by the X-ray diffraction and to be spherical fine grains concluded by the scanning electron microscopy.