• Title/Summary/Keyword: TiN Layer

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Effects of Process Parameters on Formation of TiN Coating Layer in Small Holes by PACVD (PACVD 방법으로 TiN 코팅시 공정변수가 작은 동공 내부의 코팅층 형성에 미치는 영향)

  • Kim, Deok-Jae;Jo, Yeong-Rae;Baek, Jong-Mun;Gwak, Jong-Gu
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.441-447
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    • 2001
  • A study on the TiN coating layer in small holes on the Purpose of die-casting dies application has been performed with a PACVD process. For the hole having diameter of 4 mm. the uniform TiN coating layer in the hole to the depth of 20 mm was achieved using DC pulsed power source. To understand the forming mechanism of TiN coating layer, plasma diagnosis on Ti, $N_{2}^{+}$ and A $r^{+}$ emissions was carried out during plasma coaling process by optical emirssion spectroscopy. When the duty ratio was equal or over 50%, the Peaks of Ti,$ N_{2}^{+}$ and A $r^{+}$ emission were obviously observed. While duty ratio was equal or under 28.6%, no peaks for Ti, $N_{2}^{+}$ and A $r^$ were observed and the formation of TiN coating layer was rarely observed. For the coating in 4 mm hole diameter, the coating layer with bipolar process was two times deeper than that with unipolar process.

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Analysis of Properties Multi-Layered TiN/CrN Thin Films Deposited by AIP Method (AIP법으로 증착된 TiN/CrN 다층박막의 특성 분석)

  • Baek, Min-Sook;Yoon, Dong-Joo;Heo, Ki-Bok;Kim, Byung-Il
    • Korean Journal of Materials Research
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    • v.28 no.7
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    • pp.405-410
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    • 2018
  • TiN and CrN thin films are among the most used coatings in machine and tool steels. TiN and CrN are deposited by arc ion plating(AIP) method. The AIP method inhibits the reaction by depositing a hard, protective coating on the material surface. In this study, the characteristics of multi-layer(TiN/CrN/TiN(TCT), CrN/TiN/CrN(CTC)) are investigated. For comparison, TiN with the same thickness as the multilayer is formed as a single layer and analyzed. Thin films formed as multilayers are well stacked. The characteristics of micro hardness and corrosion resistance are better than those of single layer TiN. The TiN/CrN peak is confirmed because both TCT and CTC are formed of the same component(TiN, CrN), and the phase is first grown in the (111) direction, which is the growth direction. However, the adhesion and abrasion resistance of the multilayer films are somewhat lower.

Effects of Cobalt Ohmic Layer on Contact Resistance (코발트 오믹층의 적용에 의한 콘택저항 변화)

  • 정성희;송오성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.390-396
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    • 2003
  • As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 % in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

The Effect of Oxide Layer Formed on TiN Coated Ball and Steel Disk on Friction Characteristics in Various Sliding Conditions (미끄럼조건에 따라 TiN 코팅볼과 스틸디스크에 형성되는 산화막이 마찰특성에 미치는 영향)

  • 조정우;이영제
    • Tribology and Lubricants
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    • v.17 no.6
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    • pp.459-466
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    • 2001
  • In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk on friction characteristics in various sliding conditions were investigated. AISI52100 steel ball was used for the substrate of coated ball specimens, which were prepared by depositing TiN coating with 1(m in coating thickness. AISI1045 steel was used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of two materials, the tests were performed both in air for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation. From the test results, the frictional characteristic between the two materials was predominated by iron oxide layer that formed on wear tract of counter-body and this layer caused friction transition and high friction. And the adhesive wear occurred from steel disk to TiN coated ball caused the formation of oxide layer on counter parts between the two materials.

Study on the Oxidation Resistance of Ti-Al-N Coating Layer (Ti-Al-N코팅층의 내산화 특성에 관한 연구)

  • 김충완;김광호
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.512-518
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    • 1997
  • The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

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Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-layer Thin Film Resistors (TiNxOy/TiNx 다층 박막을 이용한 고저항 박막 저항체의 구조 및 전기적 특성평가)

  • Park, Kyoung-Woo;Hur, Sung-Gi;Nguyen, Duy Cuong;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Korean Journal of Metals and Materials
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    • v.47 no.9
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    • pp.591-596
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    • 2009
  • $TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

Effects of the thin $SiO_2$ film on the formation of $TiN/TiSi_2$ bilayer formed by rapid thermal annealing (급속열처리에 의한 $TiN/TiSi_2$ 이중구조막 혈성에 대한 Ti-Si 계면의 얇은 산화막의 영향)

  • Lee, Cheol-Jin;Sung, Han-Young;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1223-1225
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    • 1994
  • The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

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Oxidation Behavior of Ti1-xAlxN Barrier Layer for Memory Devices (메모리소자를 위한 Ti1-xAlxN 방지막의 산화 거동)

  • Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.12 no.9
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    • pp.718-723
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    • 2002
  • $Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

Performance Evaluation of Ti-Al-N coated Endmill by Arc ton Plating (아크이온플레이팅에 의한 Ti-Al-N코팅 엔드밀의 성능평가)

  • 이상용;강명창;김정석;김광호
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2002.04a
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    • pp.251-254
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    • 2002
  • The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

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Effects of the thin SiO$_{2}$ film at the Ti-Si interface on the formation of TiN/TiS$i_2$ bilayer (Ti-Si 계면의 얇은 산화막이 TiN/TiS$i_2$ 이중구조막 형성에 미치는 영향)

  • 이철진;성만영;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.2
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    • pp.242-248
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    • 1996
  • The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

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