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Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-layer Thin Film Resistors  

Park, Kyoung-Woo (School of Nano Science and Technology, Chungnam National University)
Hur, Sung-Gi (School of Nano Science and Technology, Chungnam National University)
Nguyen, Duy Cuong (School of Nano Science and Technology, Chungnam National University)
Ahn, Jun-Ku (School of Nano Science and Technology, Chungnam National University)
Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
Publication Information
Korean Journal of Metals and Materials / v.47, no.9, 2009 , pp. 591-596 More about this Journal
Abstract
$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.
Keywords
thin film resistor; TiNxOy; TCR; thermal annealing; sputtering;
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