• 한국재료학회지
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• 제20권6호
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• 한국재료학회지
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• 제17권10호
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• pp.548-554
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• 2007

[ $BaTiO_3$ ] thick film by an interfacial polymerization method was prepared at the liquid/liquid interface between benzyl alcohol saturated solution with the basic catalyst [diethyl amine ($NHEt_2$) or triethylamine ($NEt_3$)], and the water dissolved with $TiO_2$ and $Ba(CH_3COO)_2$. The film thickness increased gradually with an increase in diethyl amine($NHEt_2$) or triethylamine($NEt_3$) volume and the reaction time. The homogeneity of $BaTiO_3$ thick film after sintered at $600^{\circ}C$ was confirmed by EPMA analysis, which showed that both of Ba and Ti element were homogeneously distributed on the surface as well as in the perpendicular direction of the film. The thickness of $BaTiO_3$ film obtained by this process was $8.75\;{\mu}m$.

• 대한전기학회논문지
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• 제41권8호
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• 한국세라믹학회지
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• 제29권5호
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• pp.403-409
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• 1992

The titania membrane thickness coated on the porous alumina support by the sol-gel method was analyzed using the slipcasting model. The thickness of calcined membrane layers increased linearly from 1.3 to 3.8 ${\mu}{\textrm}{m}$ with the square root of the dipping time (4~40 min). Growth rates of the thickness of wet gels and calcined layers were well described quantitatively by the slipcasting model. Through the regression of experimental data using model equations, the permeability and the pressure drop across wet gels, and the thickness and their growth rate constants of wet gels and calcined layers could be determined. It was also known that the gellation concentration of the TiO2 sol used in this work and the porosity of wet gel layes were 25 mol/ι and 0.53, respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.213-213
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• 2012

In this study, effect of EB-PVD coated Si/HA film thickness on surface characteristics of Ti-35Nb-10Zr alloy was investigated. The Ti-35Nb-10Zr alloy was fabricated by arc melting method. The Si/HA layers were coated with 0.8 wt.% of Si in pure HA by EB-PVD method. The coating thickness was consisted with 100 - 300 nm for each group, the surface characteristics was analyzed by FE-SEM, EDS, XRD, XRF and corrosion test. The Si/HA coating layer was well deposited on the alloy surface by EB-PVD, the thickness was correlative factor with HA peaks and corrosion resistance value.

• 대한전기학회논문지
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• 제41권6호
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• 공업화학
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• 제21권4호
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• pp.405-410
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• 2010

P25와 Dyesol $TiO_2$ (Titanium dioxide)를 사용하여 두께와 소성 온도가 다른 전극을 제조하여 염료감응형 태양전지(Dye Sensitized Solar Cell, DSSC)를 제조한 후 광 변환 효율을 측정하였다. 소성 전 후의 $TiO_2$ 작업 전극의 두께 변화는 FE-SEM을 사용하여 시편의 cross section을 확인하여 비교하였다. 또한 상대전극인 Pt의 소성 온도에 따른 DSSC의 효율 변화도 측정하였다. P25를 활용한 DSSC는 doctor blade로 1층으로 도포 후, $500^{\circ}C$에서 30 min 동안 소성한 작업 전극(${\sim}20.4{\mu}m$)과 $350^{\circ}C$에서 30 min 동안 소성한 Pt 상대 전극으로 제조한 셀이 3.8%의 광효율을 나타내었다. Dyesol $TiO_2$를 활용하여 1층으로 도포 후, $500^{\circ}C$에서 30 min 동안 소성한 작업전극(${\sim}9.1\;{\mu}m$)과 $450^{\circ}C$에서 30 min 동안 소성한 Pt 상대 전극으로 제조한 셀이 5.8%의 광 효율을 나타냄을 알았다.