Browse > Article
http://dx.doi.org/10.3740/MRSK.2010.20.6.338

Simultaneous Formation of NiSi Contact and Cu Plug/Ti Barrier  

Bae, Kyoo-Sik (Department of Electronic Materials Engineering, The University of Suwon)
Publication Information
Korean Journal of Materials Research / v.20, no.6, 2010 , pp. 338-343 More about this Journal
Abstract
As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.
Keywords
Cu contact; NiSi; Ti Diffusion barrier; Ti thickness; interdiffusion;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
Times Cited By SCOPUS : 0
연도 인용수 순위
1 A. Lauwers, J. A. Kittl, M. J. H. Van Dal, O. Chamirian,M. A. Pawlak, M. de Potter, R. Lindsay, T. Raymakers,X. Pages, B. Mebarki, T. Mandrekar and K. Maes, Mater. Sci. Eng. B, 114-115, 29 (2004).   DOI   ScienceOn
2 K. Yoon and O. Song, Kor. J. Mater. Res., 18(1), 5(2008) (in Korean).   DOI   ScienceOn
3 H. Iwai, T. Ohguro and S. -I. Ohmi, Microelectron. Eng.,60, 157 (2002).   DOI   ScienceOn
4 W. L. Yang, W. -F. Fa, H. C. You, K. -L. Ou, T. F. Leiand C. -P. Chou, IEEE T. Electron. Dev, ED-49(11),1947 (2002).
5 F. Braud, J. Torres, J. Palleau, J. L. Mermet and M. J.Mouche, Appl. Surf. Sci., 91, 251 (1995).   DOI   ScienceOn
6 M. Spindler, S. B. Menzel, C. Eggs, J. Thomas, T.Gemming and J. Eckert, Microelectron. Eng., 85, 2055(2008).   DOI   ScienceOn
7 S. Lee and J. Lee, Kor. J. Mater. Res., 14(4), 246 (2004)(in Korean).   DOI   ScienceOn
8 D. Z. Chi, D. Mangelinck, A. Z. Zuruzi, A. S. W. Wongand S. K. Lahiri, J. Electron. Mater., 30(12), 1483 (2001).   DOI
9 Y. Setiawan, P. S. Lee, C. W. Tan and K. L. Pey, Thin Solid Films, 504, 153 (2006).   DOI   ScienceOn
10 K. -M. Yin, L. Chang, F. -R. Chen, J. -J. Kai, C. -C.Chiang, P. Ding, B. Chin, H. Zhang and F. Chen, Thin Solid Films, 388, 15 (2001).   DOI   ScienceOn
11 N. Mattoso, J. Mater. Sci., 30, 3242 (1995).   DOI
12 W. Gao, H. Gong, J. He, A. Thomas, L. Chan and S. Li,Mater. Lett., 51, 78 (2001).   DOI   ScienceOn
13 C. -C. Wang, H. -H. Lin and M. -C. Chen, Jpn. J. Appl. Phys., 43, 5997 (2004).   DOI
14 J. -J. You and K. -S. Bae, Kor. J. Mater. Res., 17(9), 463(2007) (in Korean).   DOI   ScienceOn
15 J. -H. Lin, J. -H. Lee, C. -S. Hsu and J. -S. Fang, J. Electron. Mater., 38(11), 2251 (2009).   DOI
16 C. Zhao, Zs. Tokei, A. Haider and S. Demuynck,Microelectron. Eng., 84, 2669 (2007).   DOI   ScienceOn
17 C. Zhao, J. Y. Ahn, N. Horiguchi, S. Demuynck and Zs.Tokei, Microelectron. Eng., 85, 2009 (2008).   DOI   ScienceOn
18 M. Zhou, Y. Zhao, W. Huang, B. -M. Wang, G. -P. Ru,Y. -L. Jiang, R. Liu and X. -P. Qu, Microelectron. Eng.,85, 2028 (2008).   DOI   ScienceOn