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GaN Grown Using Ti Metal Mask by HVPE(Hydride Vapor Phase Epitaxiy)  

Kim, Dong-Sik (Dept. of Computer Systems & Engineering, Inha Technical College)
Publication Information
전자공학회논문지 IE / v.48, no.2, 2011 , pp. 1-5 More about this Journal
Abstract
The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.
Keywords
HVPE; GaN; Ti strip; void;
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