• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• 한국재료학회지
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• 제9권4호
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• pp.419-427
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• 1999

TiNi shape memory alloy was shape memory heat-treated and investigated its mechanical properties with the variation of prestrain. Also 6061 Al matrix composites with TiNi shape memory alloy fiber as reinforcement have been fabricated by Permanent Mold Casting to investigate the microstructures and interface properties. Yield stress of TiNi wire was the most high in the case of before heat-treatment and then decreased as increasing heat-treatment time. In each heat-treatment condition, the yield stress of TiNi wire was not changed with increasing the amount of prestrain. The interface bonding of TiNi/6061Al composite was fine. There was a 2$\mu\textrm{m}$ thickness of diffusion reaction layer at the interface. We could find out that this diffusion reaction layer was made by the mutual diffusion. The diffusion rate from Al base to TiNi wire was faster than that of reverse diffusion and the amount of the diffusion was also a little more than that of reverse.

• 한국재료학회지
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• 제12권12호
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• pp.955-961
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• 2002

2.7vol%TiNi/6061 Al composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum hot press. It was investigated by OM, SEM, EPMA and XRD analysis for the behavior of diffusion layer formation on various heat treatment condition. Thickness of diffusion layer was increased proportionally according to heat treatment time. The layer was formed by the mutual diffusion of TiNi and Al. The diffusion rate from TiNi fiber to Al matrix was faster than that of reverse diffusion path. The more diffused layer was formed in Al matrix. The diffusion at interface layer was consisted of $A1_3$Ti, $Al_3$Ni analyzed by EPMA, XRD results.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.298-303
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• 1996

A double diffusion technique is developed to enhance the effective mode index of optical waveguides in $LiTaO_3$. It consists of Zn diffusion from the vapor phase at relatively low temperatures (750->$800^{\circ}C$), into waveguides initially produced by Ti indiffusion at higher temperature (1150->$1200^{\circ}C$). Both X- and Z-cut substrates are investigated. A model that combines profiles of both diffusion is formulated to calculate the expected effective index values for planar waveguides. Good agreement is found between experimental results and model predictions which assume that the initial Ti profile is not affected by the lower temperature Zn diffusion. Effective index enhancements as high as 0.005 and 0.003 are obtained by this method for the fundamental extraordinary and ordinary modes, respectively.

• 한국재료학회지
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• 제16권10호
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• 한국진공학회지
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• 제7권2호
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• pp.112-117
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• 1998

TiN을 Cu의 확산방지막으로 사용하기 위해 많은 연구가 되어왔는데, 이 연구에서는 특히 X-ray photoelectron spectroscopy(XPS)를 이용하여 TiN박막에서의 Cu의 확산현상을 연구하였다. TiN박막은 일반적으로 columnar grain을 형성하면서 성장을 하는데, 녹는점의 1/3에 해당하는 비교적 낮은 온도에서는 grain들의 경계를 따라 Cu가 확산함을 확인하였다. Atomic force microscopy(AFM)를 이용하여 grain의 모양을 관찰하였고, 이 grain boundary 를 통한 확산 현상을 연구하기 위하여, modified surface accumulation method를 이용하였 다. 연구 결과, TiN박막에서의 Cu의 grain boundary diffusion의 활성화 에너지 $Q_b$는 0.23 eV, Diffusivity $D_{bo}$는 $5.5\times10^{-12{\textrm{cm}^2$/sec의 값을 얻었다.

• 한국재료학회지
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• 제27권11호
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• pp.603-608
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• 2017

$Si_3N_4$와 Ti 또는 TiAl 합금을 $900^{\circ}C$에서 확산쌍을 제조하여 분석하고, 확산층의 분석을 통하여 생성된 층마다의 조성을 분석하여 각 원소들의 확산 경로 및 속도를 비교 하였다. $Si_3N_4/Ti$의 확산 쌍의 확산 경로는 $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$로 나타났고, Ti 측면에서 TiN층이 생성 되었음으로 N의 확산 속도가 Si 보다 빠름을 알 수 있었다. $Si_3N_4/TiAl$ 합금의 확산쌍은 $Si_3N_4/Ti$ 사이의 확산쌍과는 다르게 Si, N, Ti, Al 의 각 원소 마다의 확산 속도 차이로 인하여 확산 경로는 $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ 상으로 나타났다. 상태도를 통하여 생성된 확산쌍의 확산경로를 파악한 결과, 확산경로의 요구사항을 모두 만족하였다. $Si_3N_4/Ti$ 확산에서 Ti를 이용한 적분확산 계수는 $Ti_5Si_3$, TiN에서 $2.18{\times}10^{-16}m^2/sec$, $2.19{\times}10^{-16}m^2/sec$, $Si_3N_4/TiAl$ 확산 쌍에서 Ti를 이용한 적분확산 계수는 각각 TiN(Al) 상에서 $2.88{\times}10^{-16}m^2/sec$, $Ti_3Al$ 상에서 $1.48{\times}10^{-15}m^2/sec$으로 나타났다. 본 연구는 $Si_3N_4$와 Ti 및 TiAl의 계면 반응을 분석한 결과로서 $Si_3N_4$ 상을 이용한 확산반응의 기초자료로 사용될 수 있을 것으로 사료된다.

• 한국진공학회지
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• 제4권S2호
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• pp.79-82
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• 1995

$N^+$ beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~$3\times 10^{17}$atoms/$\textrm{cm}^2$. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range $600^{\circ}C$~$800^{\circ}C$ for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.

• 산업기술연구
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• 제22권A호
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• pp.255-260
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• 2002

We prepared the nano-sized $TiO_2$ particles by the diffusion flame reactor and investigated the effects of several process variables on the generation and transport properties of $TiO_2$ particle. As the length from the tip of diffusion flame reactor increases, the size of $TiO_2$ particle increases by the coagulation between particles. The structure of $TiO_2$ particles prepared is almost found to be anatase. It was found that the $TiO_2$ particle size depends more largely on the change of reactor temperature than on the change of inlet $TiCl_4$ concentration.