초록
TiN을 Cu의 확산방지막으로 사용하기 위해 많은 연구가 되어왔는데, 이 연구에서는 특히 X-ray photoelectron spectroscopy(XPS)를 이용하여 TiN박막에서의 Cu의 확산현상을 연구하였다. TiN박막은 일반적으로 columnar grain을 형성하면서 성장을 하는데, 녹는점의 1/3에 해당하는 비교적 낮은 온도에서는 grain들의 경계를 따라 Cu가 확산함을 확인하였다. Atomic force microscopy(AFM)를 이용하여 grain의 모양을 관찰하였고, 이 grain boundary 를 통한 확산 현상을 연구하기 위하여, modified surface accumulation method를 이용하였 다. 연구 결과, TiN박막에서의 Cu의 grain boundary diffusion의 활성화 에너지 $Q_b$는 0.23 eV, Diffusivity $D_{bo}$는 $5.5\times10^{-12{\textrm{cm}^2$/sec의 값을 얻었다.
TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy, $Q_b$ was 0.23 eV, and the diffusivity, $D_{bo}$ was $5.5\times10^{-12{\textrm{cm}^2$/sec.
