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http://dx.doi.org/10.4313/JKEM.2003.16.2.097

A Study on the Diffusion Barrier Properties of Pt/Ti and Ni/Ti for Cu Metallization  

장성근 (청운대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.2, 2003 , pp. 97-101 More about this Journal
Abstract
New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.
Keywords
Diffusion harrier; Copper Charge pumping current; Cu diffusion, Pt/Ti;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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