• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• 한국재료학회지
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• 제27권11호
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• pp.603-608
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• 2017

$Si_3N_4$와 Ti 또는 TiAl 합금을 $900^{\circ}C$에서 확산쌍을 제조하여 분석하고, 확산층의 분석을 통하여 생성된 층마다의 조성을 분석하여 각 원소들의 확산 경로 및 속도를 비교 하였다. $Si_3N_4/Ti$의 확산 쌍의 확산 경로는 $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$로 나타났고, Ti 측면에서 TiN층이 생성 되었음으로 N의 확산 속도가 Si 보다 빠름을 알 수 있었다. $Si_3N_4/TiAl$ 합금의 확산쌍은 $Si_3N_4/Ti$ 사이의 확산쌍과는 다르게 Si, N, Ti, Al 의 각 원소 마다의 확산 속도 차이로 인하여 확산 경로는 $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ 상으로 나타났다. 상태도를 통하여 생성된 확산쌍의 확산경로를 파악한 결과, 확산경로의 요구사항을 모두 만족하였다. $Si_3N_4/Ti$ 확산에서 Ti를 이용한 적분확산 계수는 $Ti_5Si_3$, TiN에서 $2.18{\times}10^{-16}m^2/sec$, $2.19{\times}10^{-16}m^2/sec$, $Si_3N_4/TiAl$ 확산 쌍에서 Ti를 이용한 적분확산 계수는 각각 TiN(Al) 상에서 $2.88{\times}10^{-16}m^2/sec$, $Ti_3Al$ 상에서 $1.48{\times}10^{-15}m^2/sec$으로 나타났다. 본 연구는 $Si_3N_4$와 Ti 및 TiAl의 계면 반응을 분석한 결과로서 $Si_3N_4$ 상을 이용한 확산반응의 기초자료로 사용될 수 있을 것으로 사료된다.

• 한국표면공학회지
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• 제36권2호
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• 한국표면공학회지
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• 제37권3호
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.130-130
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• 2018

산업 발전으로 특수합금들이 발달함에 따라 가공할 수 있는 새로운 절삭공구소재들이 개발되어지고 있다. 또한 공구소재보다 코팅개발이 상대적으로 더욱 효과적이기 때문에 코팅 기술 개발이 활발히 진행되고 있다. 일본에서는 새로운 코팅층 물질 개발보다는 기존의 코팅물질을 조합하거나 개량하여 성능을 향상시키는 추세이다. TiAlSiN 박막은 스퍼터링과 음극 아크 소스를 이용한 hybrid 공정을 이용하여 코팅 후 특성을 평가하였다. Ti-50at.%Al의 조성을 갖는 TiAl 합금 타겟은 음극 아크 소스를 이용하여 코팅하였다. 공정 가스는 Ar과 N2의 혼합 가스를 사용하였으며 공정 압력은 $1.0{\times}10^{-2}Torr$이었다. 음극 아크 소스에 인가된 전류는 70 A이었다. TiAlSiN 박막의 Si 함량을 조절하기 위해서 Si은 스퍼터링으로 코팅하였으며 스퍼터링 소스에 인가되는 전력의 세기를 0.29 kW ~ 1.05 kW까지 변화시켰다. 코팅 공정에 사용된 Si 타겟의 순도는 4N이다. TiAlSiN 박막의 Si 함량은 스퍼터링 전력에 따라 3.4 ~ 14.4at%까지 변화하는 것을 확인하였다. TiAlSiN 코팅층의 경도는 초미소 경도계를 이용하여 측정하였으며, Si 함량이 증가하면 TiAlSiN 박막의 경도도 증가하는 것을 확인할 수 있다. TiAlSiN 박막의 Si 함량이 9.2at.%일 때 3000 Hv 이상의 경도를 보였다. TiAlSiN 코팅층의 Si 함량이 14.4at%로 높아지면 경도가 낮아지는 현상을 보였다. TiAlSiN 박막의 Si 함량이 증가하면 내산화성이 향상되는 현상을 확인할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• 한국표면공학회지
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• 제42권2호
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• 한국표면공학회지
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• 제54권5호
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• 한국표면공학회지
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• 제47권4호
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.