• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.1-8
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• 1996

High-sensitive pyroelectric infrared sensors have been fabricated with La-modified $PbTiO_{3}$(PLT) thin plates. The PLT thin plates have the composition of $(Pb_{0.9}La_{0.1}Ti_{0.75}O_{3})_{0.75}(PbO)_{0.25}$. Thickness of the thin plates is $100\;{\mu}m$. Top side electrodes exposed to IR are vacuum evaporated Ni-Cr, and bottom side electrodes are Ag. Each one takes the area of $1{\times}2\;mm^{2}$. The thin plates have a large resistivity of $6.41{\times}10^{10}{\Omega}{\cdot}cm$ and a relative dielectric constant of 341. They have a high figure of merit of $4.0{\times}10^{-11}\;Ccm/J$ due to its high pyroelectric coefficient of $4.45{\times}10^{-8}\;C/cm^{2}K$. The sensors show such a large voltage responsivity as 2501 V/W. That they can find practical applications like the pyroelectric infrared detectors.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.197-197
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• 2016

Commercially pure titanium (CP Ti) and Ti-6Al-4V alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Manganese(Mn) plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Radio frequency(RF) magnetron sputtering in the various PVD methods has high deposition rates, high-purity films, extremely high adhesion of films, and excellent uniform layers for depositing a wide range of materials, including metals, alloys and ceramics like a hydroxyapatite. The aim of this study is to research the Mn coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. Mn coatings was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Mn coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.60-65
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• 2009

We performed a study on optical properties of $BaSm_2Ti_4O_{12}$ thin films by vacuum ultra violet spectroscopic ellipsometry in the $0.92{\sim}8.6\;eV$ energy range. For the analysis of the measured ellipsometric spectra, a 5-layer model was applied where optical property of the $BaSm_2Ti_4O_{12}$ layer was well represented by a Tauc-Lorentz dispersion function. Our analysis clearly showed new structure in high energy region at about 7.5 eV Consistent changes of refractive index & extinction coefficient of the $BaSm_2Ti_4O_{12}$ thin film by the growth and annealing temperatures were also confirmed.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.669-675
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• 2010

One of the greatest challenges for our society is providing powerful electrochemical energy conversion and storage devices. Rechargeable lithium-ion batteries and fuel cells are among the most promising candidates in terms of energy and power density. As the starting material, $TiCl_4{\cdot}YCl_3$ solution and dispersing agent (HCP) were mixed and synthesized using ammonia as the precipitation agent, in order to prepare the nano size Y doped spherical $TiO_2$ precursor. Then, the $Li_4Ti_5O_{12}$ was synthesized using solid state reaction method through the stoichiometric mixture of Y doped spherical $TiO_2$ precursor and LiOH. The Ti mole increased the concentration of the spherical particle size due to the addition of HPC with a similar particle size distribution in a well in which $Li_4Ti_5O_{12}$ spherical particles could be obtained. The optimal synthesis conditions and the molar ratio of the Ti 0.05 mol reaction at $50^{\circ}C$ for 30 minutes and at $850^{\circ}C$ for 6 hours heat treatment time were optimized. $Li_4Ti_5O_{12}$ was prepared by the above conditions as a working electrode after generating the Coin cell; then, electrochemical properties were evaluated when the voltage range of 1.5V was flat, the initial capacity was 141 mAh/g, and cycle retention rate was 86%; also, redox reactions between 1.5 and 1.7V, which arose from the insertion and deintercalation of 0.005 mole of Y doping is not a case of doping because the C-rate characteristics were significantly better.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.642-653
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• 2006

Purpose : The purpose of this study was to investigate the effect of the output energy(voltage) of laser welding on the strength and properties of joint of cast titanium(CP Gr II) and titanium alloy(Ti-6Al-4V). Material and method : Cast titanium and its alloy rods(ISO6871) were prepared and perpendicularly cut at the center of the rod. After the cut halves were fixed in a jig, and the joints welded with a laser-welding machine at several levels of output voltage of $200V{\sim}280V$. Uncut specimens served as the non-welded control specimens The pulse duration and pulse spot size employed in this study were 10ms and 1.0mm respectively. Tensile testing was conducted at a crosshead speed of 0.5mm/min. The ultimate tensile strength(MPa) was recorded, and the data (n=6) were statistically analyzed by one-way analysis of variance(ANOVA) and Scheffe's test at ${\alpha}$=0.05. The fracture surface of specimens investigated by scanning electron microscope (SEM). Vickers microhardness was measured under 500g load of 15seconds with the optimal condition of output voltage 280V. Results : The results of this study were obtained as follows, 1. When the pulse duration and spot size were fixed at 10ms and 1.0mm respectively, increasing the output energy(voltage) increased UTS values and penetration depth of laser welded to titanium and titanium alloy. 2. For the commercial titanium grade II, ultimate tensile strength(665.3MPa) of the specimens laser-welded at voltage of 280V were not statistically(p>0.05) different from the non-welded control specimens (680.2MPa). 3. For the titanium alloy(Ti-6Al-4V), ultimate tensile strength(988.3MPa) of the specimens laser-welded at voltage of 280V were statistically(p<0.05) different from the non-welded control specimens (665.0MPa). 4. The commercial titanium grade II and titanium alloy(Ti-6Al-4V) were Vickers microhardness values were increased in the fusion zone and there were no significant differences in base metal, heat-affected zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.6
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• pp.740-750
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• 2006

Statement of problems. In an attempt to reduce screw loosening, dry lubricant coatings such as pure gold or tefron have been applied to the abutment screw. However, under repeated tightening and loosening procedures, low wear resistance and adhesion strength of coating material produced free particles on the surface of abutment screw and increased frictional resistance resulting in screw tightening problems. Purpose. The aim of this study was to compare friction coefficient, adhesion strength, vickers hardness and evaluate coating surface of titanium alloy specimens coated with TiN(titanium nitride), ZrN(zirconium nitride) and WC(tungsten carbide). Material and method. Titanium alloy(Ti-6Al-4V) discs of 12mm in diameter and 1mm in thickness divided into 4 groups. TiN, ZrN and WC was coated for the specimens of 3 groups respectively, and those of 1 group were not coated. Each group was made up of 4 specimens. In this study, sputtering method was used among the PVD(Physical Vapor Deposition) techniques available for TiN, ZrN and WC coatings. Friction coefficient, adhesion strength, vickers hardness and coating surface of 4 groups were measured. Results. 1. For all three coating conditions, friction coefficient was significantly decreased. Especially, ZrN coated surface showed the lowest value. $TiN(0.39{\pm}0.02)$, $ZrN(0.24{\pm}0.01)$, $WC(0.31{\pm}0.03)$. 2. TiN coating showed the highest adhesion strength, however ZrN coating had the lowest value. $TiN(25.3N{\pm}1.6)$, $ZrN(14.8N{\pm}0.6)$, $ WC(18.4N{\pm}0.7)$. 3. Vickers hardness of all three coatings was remarkably increased as compared with that of none coated specimen. TiN coating had the highest Vickers hardness, however WC coating showed the lowest value. $TiN(1865.2{\pm}33.8)$, $ZrN(1814.4{\pm}18.6)$, $WC(1008.5{\pm}35.9)$. 4. The ZrN or WC coated specimen showed a homogeneous and smooth surface, however the rough surface with defects was observed for TiN coating. Conclusions. When TiN, ZrN and WC coating applied to the abutment screw, frictional resistance would be reduced, as a result, the greater preload and prevention of the screw loosening could be expected.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.