• 열처리공학회지
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• 제28권2호
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• 대한안전경영과학회지
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• 제15권3호
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• pp.127-132
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• 2013

This study shows an air-purification test by the UV lamp on which TiO2 catalyst is deposited with glass fiber in the reactor chamber. This test was based on the fundamental data of air-purifier as assessing a removing ability on various contaminants such as CH3COOH, NH3, NO and SO2 as variation of the TiO2 coating, the wave of UV lamp, and the additive CaO. As a result, the highest decomposing removal ratio was shown when 5-times coated glass fiber was used. It can be due to the recombination reaction of electrons and electron-hole in the loaded CaO. Thus, the decomposing removal ratio increased as the recombination ratio decreased. In addition, it was confirmed that the decomposing removal ratio lowered when CaO was considerably deposited because it hided the lamp of OH-1 radical.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• 한국표면공학회지
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• 제42권5호
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• pp.203-207
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• 2009

Interaction between human osteoblast (hFOB 1.19) and CrN films was conducted in vitro. CrN films were produced by cathodic arc plasma deposition. The surface was characterized by atomic force microscopy (AFM). CrN films, glass substrates and TiN films were cultured with human osteoblasts for 48 and 72 hours. Actin stress fiber patterns and cell adhesion of osteoblasts were found less organized and weak on CrN films compared to those on the glass substrates and the TiN films. Human osteoblasts also showed less proliferation and less distributed microtubule on CrN films compared to those on glass substrates and TiN films. Focal contact adhesion was not observed in the cells cultured on CrN films, whereas focal contact adhesion was observed well in the cells cultured on glass substrates and TiN films. As a result, the CrN film is a potential candidate as a surface coating to be used for implantable devices which requires minimal cellular adhesion.

• 열처리공학회지
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• 제25권5호
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• 한국결정성장학회지
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• 제13권6호
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• pp.272-278
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• 2003

초음파 분무에 의한 유기금속 화학증착법 (MOCVD)법으로 $Bi_4Ti_3O_{12}$(BIT)와 Bi와 Ti 대신에 La과 V을 동시에 치환시킨 ($Bi_{3.75}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV)박막을 ITO/glass 기판 위에 증착하였다. 산소 분위기에서 30분 동안 증착한 후, RTA 방식의 직접삽입법으로 열처리를 하였다. 박막은 페로브스카이트상 생성 온도, 미세구조, 전기적 성질에 관해서 조사하였다. XRD(X-Ray diffraction) 측정결과 BLTV 박막의 페로브스카이트상 생성 온도는 약 $600^{\circ}C$로써 BIT의 $650^{\circ}C$보다 더 낮았다. BLTV 박막의 누설전류는 인가전압 1 V에서 $1.52\times10^{-19}$ A/cm^2$로 측정되었다 또한, $650^{\circ}C$에서 증착했을 경우 잔류 분극값이 $5.6\mu$C/$cm^2$, 항전계값 96.5 kV/cm으로 명확한 강유전성을 보이고 있다.

• 한국재료학회지
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• 제13권7호
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• pp.436-441
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• 2003

The characteristics of <112> orientation were studied for the $TiO_2$thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that $TiO_2$ films exhibited <112>-preferred orientation in a specific temperature range. Although $TiO_2$polycrystalline film grown deposited at relatively low temperature showed the growth of random directions, the <112>-preferred orientation was gradually developed with increasing deposition temperature. According to exhibit higher degree of <112>-preferred orientation, $TiO_2$thin film showed porous surface morphology, well-developed columnar structure, and deeper voids resulted from non-aggregation of columns were observed. In addition, transmittance was enhanced. Therefore, the growth of $TiO_2$with <112>-preferred orientation is suitable for glass coating because of predominance of photocatalytic efficiency and transmittance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.307-308
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• 2009

We have proposed an index matching film to improve the emitting efficiency of green OLED. Here, SiO2 and TiO2 were selected to coat the green OLED. The structures of index matching film were designed in G1ass/TiO2/SiO2/ITO and SiO2/TiO2/Glass/ITO. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited devices were 86.14 and 85.07 %, respectively.