Effects of substitution with La and V in ![]() |
김기현
(경북대학교 무기재료공학과)
곽병오 (경북대학교 무기재료공학과) 이승엽 (경북대학교 무기재료공학과) 이진홍 (경북대학교 무기재료공학과) 박병옥 (경북대학교 무기재료공학과) |
1 |
Dielectric properties of layered perovskite <TEX>${Sr}_{1-x}A_x$</TEX>Bi₂Nb₂<TEX>$O_{9}$</TEX> ferroelectrics (A=La, Ca and x=0,0.1)
/
DOI ScienceOn |
2 |
Growth of layered perovskite BI₄Ti₃<TEX>$O_{12}$</TEX> thin films by sol-gel process
/
DOI ScienceOn |
3 |
Lanthanum-substituted bismuth titanate for use in non-volatile memories
/
DOI |
4 |
Preparation of ferroelectric thin films of bismuth layer structured compounds
/
DOI |
5 |
Valence band and bandgap states of ferroelectric SrBi₂Ta₂TEX>$O_{9}$</TEX> thin films
/
DOI ScienceOn |
6 |
Ferroelectric thin-films of bismuthcontaining layered perovskites - part ⅠBi₄Ti₃<TEX>$O_{12}$</TEX>
/
DOI ScienceOn |
7 |
Properties of ZnO thim films by the ultrasonic spray pyrolysis technique
/
과학기술학회마을 |
8 |
On the physical properties of indium oxide thin films deposited by pyrosol in comparison with films deposited by pneumatic spray pyrolysis
/
DOI ScienceOn |
9 |
/
|
10 |
Property design of Bi₄Ti₃<TEX>$O_{12}$</TEX>-based thin films using a site-engineered concept
/
DOI ScienceOn |
11 |
Oriented bismuth titanate thin films by single-solid-source metalorganic chemical vapor depolsition
/
DOI |
12 |
Ferroelectric properties of vanadium-doped Bi₄Ti₃<TEX>$O_{12}$</TEX> thin films deposited by sol-gel method
/
DOI ScienceOn |
![]() |