• 한국광학회지
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• 제12권2호
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• pp.143-149
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• 2001

Lithium triborate$(LiB_3O_5, LBO)$ 결정을 이용하여 파장가변 티타늄 사파이어 레이저로부터 내부공진기 구조를 이용한 진동수 배가를 수행하였다 효과적인 진동수 배가를 수행하기 위해서 자체 개발한 파장가변 티타늄 사파이어 레이저를 이용하여 기본파의 중심 파장 및 파장 변화에 대한 LBO 결정의 스펙트럼 선폭 및 각선폭 등을 측정하였으며 내부공진기 방법을 이용하여 진동수 배가된 제2고조파 출력 특성 및 파장 가변성 등을 측정하였따. 800nm의 기본파 파장에서 LBO 결정의 $\theta$방향에 대한 스펙트럼 선폭 및 각선폭은 각각 1.54nm.cm 및 3.8mard.cm으로 확인되었다. 또한 내부공진기 구조를 이용한 진동수 배가 결과, 기본파의 출력이 800nm에서 185mW일때 400nm에서 스펙트럼의 반치폭이 0.089nm인 5.3nW의 제2고조파 출력을 얻을 수 있었고, 진동수 배가된 출력의 파장가변 영역은 397nm-403nm로 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• 열처리공학회지
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• 제33권3호
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국진공학회지
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• 제21권5호
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• pp.264-272
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• 2012

본 논문에서는 InGaAs 반도체에 기반한 테라헤르쯔(THz) 송/수신기(Tx/Rx) 제작을 위한 기초 연구로서, InGaAs 박막의 THz 발생 및 검출 특성에 관한 결과를 보고한다. THz 발생과 검출 특성 조사에는 각각 MBE 장비로 고온(HT) 및 저온(LT)에서 성장한 InGaAs 박막이 사용되었으며, THz 발생에는 photo-Dember 표면방출 방법이 시도되었다. HT-InGaAs 기판 위에 제작한 전송선(Ti/Au)의 가장자리에 Ti:Sapphire fs 펄스 레이저(60 ps/83 MHz)를 조사하여 THz파를 발생시켰으며, 이때 THz 검출에는 LT-GaAs가 사용되었다. 시간지연에 따른 전류신호를 Fourier 변환하여 얻은 THz 스펙트럼의 주파수 범위는 약 0.5~2 THz이었으며, 여기 레이저 출력에 대한 신호의 세기는 지수함수적 변화를 보였다. THz 검출 특성에 사용한 LT-InGaAs Rx에는 쌍극자(5/20 ${\mu}m$) 구조의 안테나가 탑재되어 있으며, 차단 주파수는 약 2 THz이었다.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.131-134
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• 2003

We demonstrated an optical frequency synthesizer based on a femtosecond (fs) mode-locked Ti:sapphire (Ti:s) laser by simultaneously stabilizing the carrier-offset frequency, $f_{ceo}$, and repetition rate, $f_{ rep}$, referenced to the Cs atomic frequency standard. By using two wide-band digital phase-detectors we realized a phase-coherent link between $f_{rep} and f_{ceo} with the relation f_{ceo} = f_{AOM} 5/6f_{rep} ≡ 0, where f_{AOM} = 5/6f_{rep}$ is the phase-locked driving frequency of an acousto-optic modulator (AOM) in a self-referencing interferometer and $f_{rep}$ = 100 MHz. As a result, we could stabilize all components of the fs laser comb at once with an equal frequency separation $f_{rep}$ = 100 MHz with $f_{ceo}$ = 0. In our optical frequency synthesizer, the frequency of the nth component ($f_{n}$) is given exactly by the simple relation $f_n = nf_{rep}$, enabling us to use the fs laser comb as a frequency ruler in the optical frequency metrology.

• 한국진공학회지
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• 제20권5호
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• pp.339-344
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• 2011

C-plane 사파이어 기판 위에 펄스 레이저 증착법으로 증착시킨 n-type ZnO 박막에 대한 Ti/Au 금속의 Ohmic 접합특성을 TLM (transfer length method) 패턴 전극을 통하여 연구하였다. 여기서, Ti와 Au 금속박막은 전자빔 증착기와 열 증착기로 각각 35 nm와 90 nm 두께로 증착하였으며, TLM패턴은 광 리소그래피 법으로 면적이 $100{\times}100{\mu}m^2$인 전극패턴을 6~61 ${\mu}m$ 간격으로 형성하였다. Ti/Au 금속박막과 ZnO 반도체 사이의 전기적인 성질을 개선하고 응력과 계면 결함을 감소시키기 위해, 산소 가스 분위기로 $100{\sim}500^{\circ}C$ 온도에서 각각 1분간 급속열처리를 하였다. $300^{\circ}C$의 온도에서 열처리한 시료에서 $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$의 가장 낮은 비저항 값을 보였는데, 이것은 열처리 동안 티타늄 산화막 형성과정에서 ZnO 박막 표면 근처에 산소빈자리가 형성됨으로써 나타나는 전자농도의 증가가 주된 원인으로 고려되었다.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.156-159
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• 2003

Permanent structure of photoinduced singlemode waveguide in optical fluoride glasses was demonstrated using the self-channeled plasma filament excited by a femtosecond (110 fs) Ti:sapphire laser ($λ_p$ = 800 nm). The photoinduced refractive index modification in ZBLAN glasses reached a length of approximately 10 - 15 mm from the input surface of the optical glass with the diameters ranging from 5 to 8 ${\mu}{\textrm}{m}$ at input intensities more than l.0 ${\times}$ $10^{12}$ W/$\textrm{cm}^2$. The graded refractive index profiles were fabricated to be a symmetric form from the center of an optical fluoride glass and a maximum value of refractive index change (ㅿn) was measured to be l.3${\times}$$10^{-2}$. The beam profile of the output beam transmitted through the modified region showed that the photoinduced refractive index modification produced a permanent structure of singlemode waveguide.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.