• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.152-158
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• 2006

The objective of this work is to develop the knee joint model for representing various pendulum motions and quantifying the spasticity. Knee joint model included the extension and flexion muscles. The joint moment consists of both the active moment from the stretch reflex and the passive moment from the viscoelastic joint properties. The stretch reflex was modeled as nonlinear feedback of muscle length and the muscle lengthening velocity, which is Physiologically-feasible. Moreover, we modeled the spastic reflex as having dynamic threshold to account far the various pendulum trajectories of spastic patients. We determined the model parameters of three patients who showed different pendulum trajectories through minimization of error between experimental and simulated trajectories. The simulated joint trajectories closely matched with the experimental ones, which show the proposed model can predict pendulum motions of patients with different spastic severities. The predicted muscle force from spastic reflex appeared more frequently in the severe spastic patient, which indicates the dynamic threshold relaxes slowly in this patient as is manifested by the variation coefficient of dynamic threshold. The proposed method provides prediction of muscle force and intuitive and objective evaluation of spasticity and it is expected to be useful in quantitative assessment of spasticity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• The KIPS Transactions:PartC
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• v.9C no.6
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• pp.841-846
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• 2002

We applies a seasonal ARIMA model to the timely forecasting in a line utilization and its confidence interval on the base of the past data of the line utilization that QoS of the network is greatly influenced by. And this paper proposes the learning algorithm of dynamic threshold in line utilization using the SARIMA model. We can find the proper dynamic threshold in timely line utilization on the various network environments and provide the confidence based on probability. Also, we have evaluated the validity of the proposed model and estimated the value of a proper threshold on real network. Network manager can overcome a shortcoming of original threshold method and maximize the performance of this algorithm.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.12
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• pp.943-947
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• 2009

To support an efficient management of software verification and validation activities, many defect prediction models have been proposed based on object oriented metrics. In order to apply defect prediction models, we need to determine a threshold value. Because we cannot know actually where defects are, it is difficult to determine threshold. Therefore, we performed a series of experiments to explore the issue of determining a threshold. In the experiments, we applied defect prediction models to other systems different from the system used in building the prediction model. Specifically, we have applied three models - Olague model, Zhou model, and Gyimothy model - to four different systems. As a result, we found that the prediction capabilities varied considerably with a chosen threshold value. Therefore, we need to perform a study on the determination of an appropriate threshold value to improve the applicably of defect prediction models.

• Imaging Science in Dentistry
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• v.32 no.1
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• pp.27-33
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• 2002

Purpose: To evaluate the influence of threshold value of computed tomography on the accuracy of rapid prototyping (RP) medical model Material and Methods : CT datas of a human dry skull were transferred from CT scanner via compact disk to a personal computer (PC). 3-dimensional image reconstruction on PC by V-works/sup TM/ 3.0 (CyberMed. Inc.) software and RP models fabrication were followed. 2-RP models were produced by threshold value of 500 and 800 selected in surface rendering process. Linear measurements between arbitrary 12 anatomical landmarks on dry skull, 3-D image model, and 2-RP models were done and compared. Thus, the accuracy of 500 RP and 800RP models was respectively evaluated. Results: There was mean difference (% difference) in absolute value of 2.27 mm (2.73%) between linear measurements of dry skull and 500 RP model. There was mean difference (% difference) in absolute value of 1.94 mm (2.52%) between linear measurements of dry skull and 800 RP model. Conclusion: Slight difference of threshold value in rendering process of 3-D modelling made a influence on the accuracy of RP medical model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.154-159
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• 2015

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.1-7
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• 1985

In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.

• The Journal of the Acoustical Society of Korea
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• v.19 no.2
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• pp.90-94
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• 2000

In this paper, we propose an efficient method of estimating a critical threshold which is used to reject unreliable patterns in a HMM based recognition system. The rejection methods based on the anti-models which are formulated as the statistical hypothesis determine whether or not to accept an input pattern by comparing the likelihood ratio of HMM and anti-models to a critical threshold. It is quite difficult to fix a threshold for the probability of a HMM because the range of such probabilities varies severely depending on the chosen class model. We estimate the critical threshold, which is very class-dependent, using the likelihood scores for the training database. In our experiments, we applied the proposed estimating method of the threshold to the HMM based 3D hand gesture recognition system. We found that this method can be used successfully for rejecting unreliable input gestures regardless of the types of anti-models.

• Communications for Statistical Applications and Methods
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• v.19 no.5
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• pp.705-720
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• 2012

In this paper, we introduce a hierarchical Bayesian model to simultaneously estimate the thresholds of each 6 cities. It was noted in the literature there was a dramatic increases in the number of deaths if the mean temperature passes a certain value (that we call a threshold). We estimate the difference of mortality before and after the threshold. For the hierarchical Bayesian analysis, some proper prior distribution of parameters and hyper-parameters are assumed. By combining the Gibbs and Metropolis-Hastings algorithm, we constructed a Markov chain Monte Carlo algorithm and the posterior inference was based on the posterior sample. The analysis shows that the estimates of the threshold are located at $25^{\circ}C{\sim}29^{\circ}C$ and the mortality around the threshold changes from -1% to 2~13%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.111-120
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• 2011

A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.