• Title/Summary/Keyword: Threshold Models

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Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors (유기박막 트랜지스터에서 문턱전압 이동의 모델링 및 시뮬레이션)

  • Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.2
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    • pp.92-97
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    • 2013
  • In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.

Simulation Method of Threshold Voltage Shift in Thin-film Transistors (박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)

  • Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.341-346
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    • 2013
  • Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

The Threshold Voltage and the Effective Channel Length Modeling of Degraded PMOSFET due to Hot Electron (Hot electron에 의하여 노쇠화된 PMOSFET의 문턱전압과 유효 채널길이 모델링)

  • 홍성택;박종태
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.8
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    • pp.72-79
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    • 1994
  • In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.

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BINARY RANDOM POWER APPROACH TO MODELING ASYMMETRIC CONDITIONAL HETEROSCEDASTICITY

  • KIM S.;HWANG S.Y.
    • Journal of the Korean Statistical Society
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    • v.34 no.1
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    • pp.61-71
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    • 2005
  • A class of asymmetric ARCH processes is proposed via binary random power transformations. This class accommodates traditional nonlinear models such as threshold ARCH (Rabemanjara and Zacoian (1993)) and Box-Cox type ARCH models(Higgins and Bera (1992)). Stationarity condition of the model is addressed. Iterative least squares(ILS) and pseudo maximum like-lihood(PML) methods are discussed for estimating parameters and related algorithms are presented. Illustrative analysis for Korea Stock Prices Index (KOSPI) data is conducted.

Fault Diagnosis of the Nonlinear Systems Using Neural Network-Based Multi-Fault Models (신경회로망기반 다중고장모델에 의한 비선형시스템의 고장진단)

  • 이인수
    • Proceedings of the IEEK Conference
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    • 2001.06e
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    • pp.115-118
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    • 2001
  • In this paper we propose an FDI(fault detection and isolation) algorithm using neural network-based multi-fault models to detect and isolate single faults in nonlinear systems. When a change in the system occurs, the errors between the system output and the neural network nominal system output cross a threshold, and once a fault in the system is detected, the fault classifier statistically isolates the fault by using the error between each neural network-based fault model output and the system output.

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Generation of Simulation input Stream using Threshold Bootstrap (임계값 부트스트랩을 사용한 시뮬레이션 입력 시나리오의 생성)

  • Kim Yun Bae;Kim Jae Bum
    • Korean Management Science Review
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    • v.22 no.1
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    • pp.15-26
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    • 2005
  • The bootstrap is a method of computational inference that simulates the creation of new data by resampling from a single data set. We propose a new job for the bootstrap: generating inputs from one historical trace using Threshold Bootstrap. In this regard, the most important quality of bootstrap samples is that they be functionally indistinguishable from independent samples of the same stochastic process. We describe a quantitative measure of difference between two time series, and demonstrate the sensitivity of this measure for discriminating between two data generating processes. Utilizing this distance measure for the task of generating inputs, we show a way of tuning the bootstrap using a single observed trace. This application of the threshold bootstrap will be a powerful tool for Monte Carlo simulation. Monte Carlo simulation analysis relies on built-in input generators. These generators make unrealistic assumptions about independence and marginal distributions. The alternative source of inputs, historical trace data, though realistic by definition, provides only a single input stream for simulation. One benefit of our method would be expanding the number of inputs achieving reality by driving system models with actual historical input series. Another benefit might be the automatic generation of lifelike scenarios for the field of finance.

Analytical Model for the Threshold Voltage of Long-Channel Asymmetric Double-Gate MOSFET based on Potential Linearity (전압분포의 선형특성을 이용한 Long-Channel Asymmetric Double-Gate MOSFET의 문턱전압 모델)

  • Yang, Hee-Jung;Kim, Ji-Hyun;Son, Ae-Ri;Kang, Dae-Gwan;Shin, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.2
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    • pp.1-6
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    • 2008
  • A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.

Effects of Multiple Threshold Values for PN Code Acquisition in DS-CDMA Systems (PN 코드 동기획득에서 다중 임계치의 효과)

  • Lee, Seong-Ju;Kim, Jae-Seok
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.1
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    • pp.42-48
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    • 2002
  • In this paper, a decision method using multiple threshold values for PN code acquisition in Direct Sequence Code Division Multiple Access (DS-CDMA) systems is described. We apply this technique to the conventional double dwell serial search algorithm and analyze it in terms of mean code acquisition time. For the analysis, we present mathematical model of proposed algorithm and also perform the simulation under IMT-2000 channel models. Numerical results show that our proposed scheme outperforms the conventional one by 0.2 - 0.5 sec with respect to the mean code acquisition time because multiple threshold values mitigate the possible decline in search performance caused by the use of a single threshold.

Extending the Scope of Automatic Time Series Model Selection: The Package autots for R

  • Jang, Dong-Ik;Oh, Hee-Seok;Kim, Dong-Hoh
    • Communications for Statistical Applications and Methods
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    • v.18 no.3
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    • pp.319-331
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    • 2011
  • In this paper, we propose automatic procedures for the model selection of various univariate time series data. Automatic model selection is important, especially in data mining with large number of time series, for example, the number (in thousands) of signals accessing a web server during a specific time period. Several methods have been proposed for automatic model selection of time series. However, most existing methods focus on linear time series models such as exponential smoothing and autoregressive integrated moving average(ARIMA) models. The key feature that distinguishes the proposed procedures from previous approaches is that the former can be used for both linear time series models and nonlinear time series models such as threshold autoregressive(TAR) models and autoregressive moving average-generalized autoregressive conditional heteroscedasticity(ARMA-GARCH) models. The proposed methods select a model from among the various models in the prediction error sense. We also provide an R package autots that implements the proposed automatic model selection procedures. In this paper, we illustrate these algorithms with the artificial and real data, and describe the implementation of the autots package for R.

The Effect of Current Perception Threshold and Pain Threshold through Transcutaneous Electrical Nerve Stimulation and Silver Spike Point Therapy (TENS와 SSP가 전류지각역치 및 통증역치에 미치는 효과)

  • Yun, Mi-Jung;Lee, Wan-Hee
    • The Journal of Korean Physical Therapy
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    • v.23 no.2
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    • pp.53-59
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    • 2011
  • Purpose: This study was designed to compare the effects of transcutaneous electrical nerve stimulation (TENS) and silver spike point (SSP) therapy on current perception threshold (CPT) and mechanical pain threshold (MPT). Methods: Forty-five healthy adult male and female subjects were studied. Fourteen of them were males and twenty-one were females. Subject were randomly assigned to receive; (1) TENS (80/120 Hz alternating frequency), (2) SSP (3 Hz), or (3) no treatment (control group). Electric stimulation was applied over LI4 and LI11 on acupuncture points of the left forearm for 30 minutes. CPT and MPT were recorded before and after electrical stimulation. The data were analyzed using linear mixed models, with group treated as a between subject factor and time a within-subject factor. Results: At 30 minutes after cessation of electrical stimulation the CPT of C fibers and A${\delta}$fibers was reduced in the TENS group that of C fibers was reduced in the SSP group (p<0.05). After cessation of electrical stimulation, the MPT of C fibers and A${\delta}$fibers increased in the TENS group, and that of A${\delta}$fibers increased in the SSP group (p<0.05). Conclusion: After TENS and SSP stimulation, MPT of C fibers and A${\delta}$fibers were selectively increased. In particular, the TENS group showed increases in both C and A${\delta}$fibers, while the SSP group showed increases only in A${\delta}$fibers.