• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1296-1300
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• 2004

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.

• 전자공학회논문지D
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• 제35D권4호
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• pp.93-100
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• 1998

Pyoelectric infrared detectors based on La-modified PbTiO3 (PLT) thin films have been fabricated by RF magnetron sputtering and micromachining technology. The detectors form Pb$_{1-x}$ La$_{x}$Ti$_{1-x}$ O$_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal struture that no poling trealization for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polyimide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively eteched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of 8.5*10$^{8}$ cm..root.Hz/W at room temperature and it is about 100 times higher than the case of micromachining technology is not used. a sensing system that detects the position as well as the existence of a human body is realized using the array sensor.sor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.112-112
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• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.315-320
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• 2020

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI₃ thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI₃ thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• The Journal of Advanced Prosthodontics
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• 제2권3호
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• pp.92-96
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• 2010

PURPOSE. The aim of this study was to evaluate the thickness of buccal and palatal alveolar bone and buccal bony curvature below root apex in maxillary anterior teeth of Korean adults using Cone-beam CT images. MATERIALS AND METHODS. The 3D image was reconstructed with dicom file obtained through CBCT from 20 - 39 year old Korean subjects (n = 20). The thickness of buccal and palatal plate, root diameter, the buccal bony curvature angle below root apex and the distance from root apex to the deepest point of buccal bony curvature were measured on maxillary anterior teeth area using OnDemand3D program. RESULTS. Mean thickness of buccal plate 3 mm below CEJ was $0.68{\pm}0.29\;mm$ at central incisor, $0.76{\pm}0.59\;mm$ at lateral incisor, and $1.07{\pm}0.80\;mm$ at canine. Mean thickness of palatal plate 3 mm below CEJ was $1.53{\pm}0.55\;mm$ of central incisor, $1.18{\pm}0.66\;mm$ of lateral incisor, $1.42{\pm}0.77\;mm$ of canine. Bucco-lingual diameter 3 mm below CEJ was $5.13{\pm}0.37\;mm$ of central incisor, $4.58{\pm}0.46\;mm$ of lateral incisor, and $5.93{\pm}0.47\;mm$ of canine. Buccal bony curvature angle below root apex was $134.7{\pm}17.5^{\circ}$ at central incisor, $151.0{\pm}13.9^{\circ}$ at lateral incisor, $153.0{\pm}9.5^{\circ}$ at canine. Distance between root apex and the deepest point of buccal bony curvature of central incisor was $3.67{\pm}1.28\;mm$ at central incisor, $3.90{\pm}1.51\;mm$ at lateral incisor, and $5.13{\pm}1.70\;mm$ at canine. CONCLUSION. Within the limitation of this study in Korean adults, the thickness of maxillary anterior buccal plate was very thin within 1mm and the thickness of palatal plate was thick, relatively. The buccal bony curvature below root apex of maxillary central incisor was higher than that of lateral incisor and canine and it seems that the buccal bony plate below root apex of central incisor is most curved.

• 대한치과교정학회지
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• 제45권5호
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• pp.245-252
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• 2015

Objective: To assess the labial and lingual alveolar bone thickness in adults with maxillary central incisors of different inclination by cone-beam computed tomography (CBCT). Methods: Ninety maxillary central incisors from 45 patients were divided into three groups based on the maxillary central incisors to palatal plane angle; lingual-inclined, normal, and labial-inclined. Reformatted CBCT images were used to measure the labial and lingual alveolar bone thickness (ABT) at intervals corresponding to every 1/10 of the root length. The sum of labial ABT and lingual ABT at the level of the root apex was used to calculate the total ABT (TABT). The number of teeth exhibiting alveolar fenestration and dehiscence in each group was also tallied. One-way analysis of variance and Tukey's honestly significant difference test were applied for statistical analysis. Results: The labial ABT and TABT values at the root apex in the lingual-inclined group were significantly lower than in the other groups (p < 0.05). Lingual and labial ABT values were very low at the cervical level in the lingual-inclined and normal groups. There was a higher prevalence of alveolar fenestration in the lingual-inclined group. Conclusions: Lingual-inclined maxillary central incisors have less bone support at the level of the root apex and a greater frequency of alveolar bone defects than normal maxillary central incisors. The bone plate at the marginal level is also very thin.

• 한국자원식물학회:학술대회논문집
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• 한국자원식물학회 2001년도 추계정기 학술발표회 초록집
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• pp.43-48
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• 2001

남부지방에서 황금의 맥후작 직파 재배시 재식밀도가 생육과 수량에 미치는 영향을 구명하여 적정 재식밀도를 확립하고자 시험한 결과는 다음과 같다. 1. 경장은 20$\times$10cm의 밀식 일수록 크고, 30$\times$10cm, 40$\times$10cm의 소식일수록 짧아서 재식주수와 경장은 정의상관이 인정되었다. 2. 경직 경은 30$\times$10cm, 40x loom의 소식일수록 크고 20$\times$10cm의 밀식일수록 작았다. 3, 수량구성요소인 주근장과 수량인 건근중은 30$\times$10cm, 40$\times$10cm의 재식주수가 적을수록 높아서 재식주수와는 부의 상관이 인정되었다. 4.이상과 같은 결과로 보아 경직경이 크고 주근장이 길어서 10a당 건근중이 많은 30$\times$10cm(33주/$m^2$)가 알맞은 재식거리였다.