• Title/Summary/Keyword: Thin metal structure

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-Physical Properties of Metal Thin Film-(Changes of Structure with Evaporation Rates) (금속박막의 물리적 성질(I)(증착속도에 따르는 구조변화))

  • 백수현;조현춘
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.6
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    • pp.980-985
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    • 1987
  • The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

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The Characterization of Interfaces between ZnO Thin Films and Metal Electrodes (ZnO 박막과 금속전극과의 계면특성조사)

  • 박성순;임원택;이창효
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.201-207
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    • 1998
  • We have investigated about interface characteristics between ZnO thin films and metal electrodes when ZnO and metal electrodes were fabricated as piezoelectric vibrators. At this, ZnO thin films were deposited by rf reactive magnetron sputtering method. After fabricating piezoelectric vibrator of Cr/ZnO/Cr structure with optimum condition, we analyse interface characteristics between ZnO thin films and metal electrodes by I-V measurement. AES depth profile, SEM and C-V measurement. From these measurements we found that ZnO piezoelectric vibrators showed good property when they fabricated as Cr/$SiO_2$/ZnO/Cr structure. And we could confirm these things by driving, and measuring vibration displacement of piezoelectric vibrator with $SiO_2$diffusion barrier.

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Pd-based metallic membranes for hydrogen separation and production

  • Tosti, Silvano;Basile, Angelo
    • Proceedings of the Membrane Society of Korea Conference
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    • 2003.07a
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    • pp.25-28
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    • 2003
  • Low cost composite metallic membranes for the hydrogen separation and production have been prepared by using thin Pd-Ag foils reinforced by metallic (stainless steel and nickel) structures. Especially, “supported membranes” have been obtained by a diffusion welding procedure in which Pd-Ag thin foils have been joined with perforated metals (nickel) and expanded metals (stainless steel): in these membranes the thin palladium foil assures both the high hydrogen permeability and the perm-selectivity while the metallic support provides the mechanical strength. A second studied method of producing "laminated membranes" consists of coating non-noble metal sheets with very thin palladium layers by diffusion welding and cold-rolling. Palladium thin coatings over these metals reduce the activation energy of the hydrogen adsorption process and make them permeable to the hydrogen. In this case, the dense non-noble metal has been used as a support structure of the thin Pd-Ag layers coated over its surfaces: a proper thickness of the metal assures the mechanical strength, the absence of defects (cracks, micro-holes) and the complete hydrogen selectivity of the membrane. membrane.

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A Hystesis Loop Modeling of Ferroelectric Thin Film Using Numerical Integration Method (수치적분을 이용한 강유전체의 이력곡선 모델링)

  • 강성준;정양희;유일현
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.696-699
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    • 2003
  • In this study, we suggested the model to precisely evaluate the ferroelectric hysteresis loop, using the modified Sawyer-Tower circuit and the ferroelectric capacitor with a MDFM(Metal-Dielectric-ferroelectric-Metal) structure. The mathematical expression of dipole polarization is applied to the numerical integration algorithm, and the fatigue property can be considered including the dielectric layer between ferroelectrics and bottom electrode. The validity of our model is proved comparing the estimated value of our model and the measured results of PLT(10) thin film.

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Development of The Multi Forming Type Progressive Die for Thin Sheet Metal

  • Sim, Sung-Bo;Jang, Chan-Ho;Sung, Yul-Min
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2001.10a
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    • pp.196-201
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    • 2001
  • This study reveals the thin sheet metal process with multi-forming die that the name is progressive die, as a pilotless type, also high precision production part is made. They require analysis of many kinds of important factors, i.e. theory and practice of metal press working and its phenomena die structure, machining condition for die making, die material, heat treatment of die components, know-how and so on. In this study, we designed and constructed a multi-forming progressive die as a bending and drawing working of multi-stage and performed through the try out for thin sheet metal. Out of the characteristics of this paper that nothing might be ever seen before such as this type of research method on the all of processes of thin and high precision production part.

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A Study on the Electrical Properties of Transition Metal Oxides Thin Film Device (금속산화 박막 전기소자의 전기적 특성 연구)

  • Choi, Sung-Jai
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.11 no.6
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    • pp.9-14
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    • 2011
  • We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

An Evaluation of Physical Properties of Metal Sprayed Coating According to Concrete Surface Treatment Methods (콘크리트 표면 처리 방법에 따른 금속 용사 피막의 물리적 특성 평가)

  • Jang, Jong-Min;Jang, Hyun O;Lee, Han-Seung
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2021.05a
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    • pp.67-68
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    • 2021
  • Social infrastructure facilities can be destroyed instantly when exposed to EMP (ElectroMagnetic Pulse), causing social chaos. However, concrete structures with low electrical conductivity cannot expect EMP shielding effect. Therefore, in this study, a metal sprayed thin film showing excellent EMP shielding performance was applied to a concrete structure to evaluate the metal spray welding efficiency and adhesion performance of the thin film according to the concrete surface treatment method. As a result according to the concrete surface treatment method, It was confirmed that the use of a roughening agent that generates physical irregularities in order to improve the welding efficiency and adhesion performance increases the physical performance of the concrete and metal sprayed thin film.

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Enhanced Electrical Performance of SiZnSnO Thin Film Transistor with Thin Metal Layer

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.141-143
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    • 2017
  • Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

Development of the Simulated Die Casting Process by using Rapid Prototyping (쾌속 조형 공정을 이용한 다이캐스팅 제품의 시작 공정 개발)

  • Kim K. D.;Yang D. Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2002.02a
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    • pp.180-186
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    • 2002
  • The simulated die-casting process in which the traditional plaster casting process is combined with Rapid Prototyping technology is being used to produce Al, Mg, and Zn die-casting prototypes. Unlike in the die-casting process, molten metal in the conventional plaster casting process is fed via a gravity pour into a mold and the mold does not cool as quickly as a die-casting mold. The plaster castings have much larger and grosser grain structure as compared as the die-castings and the thin walls of the plaster mold cavity may not be completely fillet Because of lower mechanical properties induced by the large grain structure and incomplete Idling, the conventional plaster casting process is not suitable for the trial die-casting Process. In this work, an enhanced trial die-casting process has been developed in which molten metal in the plaster mold cavity is vibrated and pressurized simultaneously. Patterns for the casting are made by Rapid Prototyping technologies and then plaster molds, which have runner system, are made using these patterns. Imparted pressurized vibration to molten metal has made grain structure of castings much finer and improved fluidity of the molten metal enough to obtain complete filling at thin walls which can not be filled in the conventional plaster casting process.

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Fabrication and Properties of Metal/Ferroelectrics/Insulator/Semiconductor Structures with ONO buffer layer (ONO 버퍼층을 이용한 Metal/Ferroelectrics/Insulator/Semiconductor 구조의 제작 및 특성)

  • 이남열;윤성민;유인규;류상욱;조성목;신웅철;최규정;유병곤;구진근
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.305-309
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    • 2002
  • We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

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