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http://dx.doi.org/10.7236/JIWIT.2011.11.6.009

A Study on the Electrical Properties of Transition Metal Oxides Thin Film Device  

Choi, Sung-Jai (경원대학교 IT대학 전자통신공학부 전자공학과)
Publication Information
The Journal of the Institute of Internet, Broadcasting and Communication / v.11, no.6, 2011 , pp. 9-14 More about this Journal
Abstract
We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.
Keywords
AlOx thin film; Metal-insulator-metal structure; Low resistance state; High resistance state;
Citations & Related Records
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