• Title/Summary/Keyword: Thin film thickness

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Determination of Thin Film Thickness by EDS Analysis and its Modeling (EDS 분석과 모델링에 의한 박막두께 측정 방법에 관한 연구)

  • Yun, Jae-Jin;Lee, Won-Jong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.647-653
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    • 2011
  • In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

In-Situ Electrical Resistance and Microstructure for Ultra-Thin Metal Film Coated by Magnetron Sputtering (마그네트론 스파터시 금속 극박막의 실시간 전기저항과 미세구조 변화)

  • Kwon, Na-Hyun;Kim, Hoi-Bong;Hwang, Bin;Bae, Dong-Su;Cho, Young-Rae
    • Korean Journal of Materials Research
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    • v.21 no.3
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    • pp.174-179
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    • 2011
  • Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

Characteristics of Ti Thin films and Application as a Working Electrode in TCO-Less Dye-Sensitized Solar Cells

  • Joo, Yong Hwan;Kim, Nam-Hoon;Park, Yong Seob
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.93-96
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    • 2017
  • The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

Thickness Measurement of a Transparent Thin Film Using Phase Change in White-Light Phase-Shift Interferometry

  • Kim, Jaeho;Kim, Kwangrak;Pahk, Heui Jae
    • Current Optics and Photonics
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    • v.1 no.5
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    • pp.505-513
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    • 2017
  • Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

The Research via Linear of Tantalum Thin Film Thickness Depending on Revolution Velocity of Spin Coater (스핀코터 회전속도에 따른 탄탈륨 박막두께의 선형모델에 관한 연구)

  • Kim, Seung Wook
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.17-22
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    • 2020
  • Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

Influence of the Thin-Film Ag Electrode Deposition Thickness on the Current Characteristics of a CVD Diamond Radiation Detector

  • Ban, Chae-Min;Lee, Chul-Yong;Jun, Byung-Hyuk
    • Journal of Radiation Protection and Research
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    • v.43 no.4
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    • pp.131-136
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    • 2018
  • Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

Geometric Modeling of Thin-film Thickness Profile for the OLED Evaporation Process (유기 증착 공정을 위한 박막 형상 모델링 EL)

  • 이응기
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.1444-1447
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    • 2004
  • For the OLED evaporation process, thin film thickness uniformity is of great practical importance. In order to achieve the better thickness uniformity, geometric simulation of film thickness distribution profile is required. In this paper, a geometric modeling algorithm is introduced for process simulation of full-color OLED evaporating system. The physical fact of the evaporation process is modeled mathematically. Based on the developed method, the uniformity of the organic layer thickness can be successfully controlled.

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Thickness and Surface Measurement of Transparent Thin-Film Layers using White Light Scanning Interferometry Combined with Reflectometry

  • Jo, Taeyong;Kim, KwangRak;Kim, SeongRyong;Pahk, HeuiJae
    • Journal of the Optical Society of Korea
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    • v.18 no.3
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    • pp.236-243
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    • 2014
  • Surface profiling and film thickness measurement play an important role for inspection. White light interferometry is widely used for engineering surfaces profiling, but its applications are limited primarily to opaque surfaces with relatively simple optical reflection behavior. The conventional bucket algorithm had given inaccurate surface profiles because of the phase error that occurs when a thin-film exists on the top of the surface. Recently, reflectometry and white light scanning interferometry were combined to measure the film thickness and surface profile. These techniques, however, have found that many local minima exist, so it is necessary to make proper initial guesses to reach the global minimum quickly. In this paper we propose combing reflectometry and white light scanning interferometry to measure the thin-film thickness and surface profile. The key idea is to divide the measurement into two states; reflectometry mode and interferometry mode to obtain the thickness and profile separately. Interferogram modeling, which considers transparent thin-film, was proposed to determine parameters such as height and thickness. With the proposed method, the ambiguity in determining the thickness and the surface has been eliminated. Standard thickness specimens were measured using the proposed method. Multi-layered film measurement results were compared with AFM measurement results. The comparison showed that surface profile and thin-film thickness can be measured successfully through the proposed method.

Desgin Method of the Quartz Crystal Thickness Monitor and its Characteristics (수정 진동자를 이용한 박막두께 감시 장치의 제작과 특성)

  • 서용운;황기웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.36 no.10
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    • pp.719-723
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    • 1987
  • This paper shows the design method and the experimental results of the thin film thickeness monitor. The thin film thickness monitor uses 6 MHz quartz crystal in sensor and cooling system for the fine operation. The thin film thickness are measured by the digital frequrency counter.

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Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate

  • Im, In-Ho;Chung, Kwang-Hyun;Kim, Duk-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.253-256
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    • 2014
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.