• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.924-926
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• 2004

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.389-396
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• 2022

Quartz crystal microbalance (QCM) based sensors are used for various applications owing to advantages such as excellent accuracy and precision, rapid response, and tiny footprint. Traditional applications of QCM-based sensors include biological sensing and thin-film thickness monitoring. Recently, QCMs have been used as functional material for novel physical and chemical detections, and with improved device design. QCM-based sensors are garnering considerable attention in particulate matter sensing and electric nose application. This review covers the challenges and solutions in physical, chemical, and biological sensing applications. First, various physical sensing applications are introduced. Secondly, the toxic gas and chemical detection studies are outlined, focusing on introducing a coating method for uniform sensing film and sensing materials for a minimal damping effect. Lastly, the biological and medical sensing applications, which use the monomolecularly decorating method for biomolecule recognition and a brief description of the overall measuring system, are also discussed.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.30-36
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• 1996

ZnO thin-film sensors were fabricated by RF magnetron sputtering method. The composition of the device material was 4 wt. % $Al_{2}O_{3}$, 1 wt. % $TiO_{2}$ and 0.2 wt. % $V_{2}O_{5}$ on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the $SiO_{2}/Si$ substrates heated at $250^{\circ}C$ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from $400^{\circ}C$ to $800^{\circ}C$. The sensors made with the thin film which were annealed at $700^{\circ}C$ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.299-303
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• 2013

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.476-476
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• 2004

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.21-26
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• 1995

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.