DOI QR코드

DOI QR Code

MEMS-Based Micro Sensor Detecting the Nitrogen Oxide Gases

산화질소 검출용 마이크로 가스센서 제조공정

  • Kim, Jung-Sik (Department of Materials Science and Engineering, The University of Seoul) ;
  • Yoon, Jin-Ho (Department of Materials Science and Engineering, The University of Seoul) ;
  • Kim, Bum-Joon (Department of Materials Science and Engineering, The University of Seoul)
  • 김정식 (서울시립대학교 신소재공학과) ;
  • 윤진호 (서울시립대학교 신소재공학과) ;
  • 김범준 (서울시립대학교 신소재공학과)
  • Received : 2013.03.18
  • Accepted : 2013.05.06
  • Published : 2013.06.27

Abstract

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

Keywords

References

  1. N. Taguchi, Japan Patent, no. 45-38200 (1962).
  2. D. E. Williams, Sens. Actuators B: Chem., 57, 1 (1999). https://doi.org/10.1016/S0925-4005(99)00133-1
  3. E. Jones, The pellistor catalytic gas detector, in: P. T. Mosley and B. C. Tofield (Eds.), Solid State Gas Sensors, p. 17-24, Adam Hilger, Bristol, UK (1987).
  4. W. Y. Chung and D. D. Lee, Thin Solid Films, 200, 329 (1991). https://doi.org/10.1016/0040-6090(91)90205-C
  5. M. Levy, J. Physique Coll., 6(41), 335 (1980).
  6. T. A. Tones, J. G. Firth and B. Mann, Sens. Actuators B: Chem. 8, 281 (1985). https://doi.org/10.1016/0250-6874(85)80029-9
  7. K. Saji, in Proc. Int. Meet. on Chemical Sensors (Fukuoka, Japan, 1983) p. 171.
  8. P. J. Shaver, Appl. Phys. Lett., 11, 255 (1967). https://doi.org/10.1063/1.1755123
  9. J. C. Loh, Japan Patent, no. 43-28560 (1967).
  10. J. -H. Yoon and J. -S. Kim, Solid State Ionics, 192(1), 668 (2011). https://doi.org/10.1016/j.ssi.2010.09.049
  11. B. -J. Kim, H. -J. Lee, J. -H. Yoon and J. -S. Kim, Sens. Lett., 10(1-2), 1 (2012). https://doi.org/10.1166/sl.2012.2314
  12. S. -D. Kim, B. -J. Kim, J. -H. Yoon and J. -S. Kim, J. Kor. Phys. Soc., 51(6), 2069 (2007). https://doi.org/10.3938/jkps.51.2069
  13. P. Ivanov, E. Llobet, F. Blancoa, A. Vergara, X. Vilanova, I. Gracia, C. Cane and X. Correig, Sens. Actuators B: Chem. 118, 311 (2006). https://doi.org/10.1016/j.snb.2006.04.036
  14. T. Siciliano, A. Tepore, G. Micocci, A. Serra, D. Manno and E. Filippo, Sens. Actuators B: Chem. 133(1), 321 (2008). https://doi.org/10.1016/j.snb.2008.02.028