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http://dx.doi.org/10.5369/JSST.2004.13.4.303

Fabrication and Characteristics of Tantalum Nitride Thin-Film Strain Gauges  

Chung, Gwiy-Sang (Dept. of Mechatronics Eng., Dongseo University)
Woo, Hyung-Soon (Dept. of Mechatronics Eng., Dongseo University)
Kim, Sun-Chul (Dept. of Electronic Information, Kyungnam Colege of Information Technology)
Hong, Dae-Sun (Dept. of Mechanical Design and Manufacturing, Changwon National University)
Publication Information
Journal of Sensor Science and Technology / v.13, no.4, 2004 , pp. 303-308 More about this Journal
Abstract
This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.
Keywords
Ta-N thin-film; strain gauge; resistivity; TCR; gauge factor;
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