• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.256-256
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• 2011

We have deposited Al2O3 thin films on Si substrates at room temperature by UV-enhanced atomic layer deposition using trimethylaluminum (TMA) and H2O as precursors with UV light. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In many cases, the surface reactions of the atomic layer deposition are not completed at low temperature. In this experiment, the surface reactions were found to be self-limiting and complementary enough to yield uniform Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effective to obtain the high quality Al2O3 thin films with defectless.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1367-1368
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• 2007

We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

• 대한미생물학회지
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• 제8권1호
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• pp.33-36
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• 1973

This study was carried out for the classification of mycobacteria using the thin-layer chromatography of mycobacterial lipids. Results as follows: Of the 12 strains of mycobacteria, the two spots on chromatogarphy were three strains of mycobacteria(BCG, M. tuberculosis($H_{37}J$) and M. ulcerans) and three spots on chromatography were two strains of mycobacteria(M. kansasii and M. balnei). The method of thin-layer chromatography of mycobacterial lipids was considered to capable for the use of classification of mycobacteria.

• Structural Engineering and Mechanics
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• 제89권6호
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• pp.571-578
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• 2024

The bistable thin cylindrical shell is developable structure with the ability to transition between its two stable configurations. This structure offers significant potential applications due to its excellent deformability. In this paper, the composite thin cylindrical shell consisting of the composite layer and the piezoelectric layer was investigated. The material and geometric parameters of the shell were found to influence its stable characteristics. The analysis model of the composite thin cylindrical shell incorporating the piezoelectric layer was developed, and the expressions for its strain energy were derived. By applying the minimum energy principle, the impact of the electric field intensity on the bi-stable behaviors of the cylindrical shell was analyzed. The results showed that the shell exhibited the bistability only under the appropriate electric field strength. And the accuracy of the theoretical prediction was verified by simulation experiments. This study provides an important reference for the application of deployable structures.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 센서학회지
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• 제9권5호
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• pp.389-395
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• 2000

본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.

• 한국석유지질학회:학술대회논문집
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• 한국석유지질학회 1998년도 제5차 학술발표회 발표논문집
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• pp.29-37
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• 1998

The sedimentary succession on the northern coast of Jindo and the adjacent area comprises the thinly bedded, fine-grained deposits of an epiclastic sandstone, siltstone, black shale/mudstone, and cherty mudstone (ca. 200m in vertical thickness), which are interpreted as the finely stratified turbidites mainly by density underflow-induced currents. Most deposits can be divided into eight facies: thin-bedded, ash-rich massive sandstone layer (mS), graded and laminated mudstone layer (glM), graded mudstone layer with ripple lamination (rM), laminated and graded siltstone layer (lgZ), finely laminated black shale layer (IBS), structureless mudstone layer (mM), thin-bedded cherty mudstone layer (lCM), and contorted and laminated mudstone layer (dlM), The thin-bedded, ash-rich sandstone facies is interpreted to be deposited from high-density turbid underflows during a relatively large flooding. Most thinly bedded mudstone facies would be deposited from low-density turbid underflows (turbidity currents) with some different hydrodynamic condition and sediment concentration during the high discharge of river water. Whereas the structureless mudstone facies may result from raining down of suspended sediment intermittently supplied by overflows and interflows. From the entire succession, graded and laminated mudstone layers interbedded with thin-bedded, ash-rich massive sandstone are dominant in the lower part of the succession, and graded mudstone layers with ripple lamination ripple lamination occur mainly in the middle part of it. On the other hand, iaminated/raded siltstone and contorted/laminated mudstone layers prevail in the upper part. The transition of facies association is suggestive of the continuous change of main depositional setting from basin plain to lower slope, which could be due to the movement of depocenter by the increase of sediment supply (volcanic activity).

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.273-277
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• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• 전자공학회논문지A
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• 제32A권12호
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.