• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.111-117
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• 2019

This study proposed the fabrication and deposition of high purity crystalline $core-TiO_2/shell-Al_2O_3$ nanoparticles. Morphological properties of $core-TiO_2$ and coated $shell-Al_2O_3$ were confirmed by transmission electron microscope (TEM) and transmission electron microscope - energy dispersive spectroscopy (TEM-EDS). The electrical properties of the prepared $core-TiO_2/shell-Al_2O_3$ nanoparticles were evaluated by applying them to a working electrode of a Dye-Sensitized Solar Cell (DSSC). The particle size, growth rate and the main crystal structure of $core-TiO_2$ were analyzed through dynamic light scattering system (DLS), scanning electron microscope (SEM) and X-ray diffraction (XRD). The $core-TiO_2$, which has a particle size of 17.1 nm, a thin film thickness of $20.1{\mu}m$ and a main crystal structure of anatase, shows higher electrical efficiency than the conventional paste-based dye-sensitized solar cell (DSSC). In addition, the energy conversion efficiency (6.28%) of the dye-sensitized solar cell (DSSC) using the $core-TiO_2/shell-Al_2O_3$ nanoparticles selectively controlled to the working electrode is 26.1% higher than the energy conversion efficiency (4.99%) of the dye-sensitized solar cell (DSSC) using the conventional paste method.

• Journal of Adhesion and Interface
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• v.20 no.1
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• pp.1-8
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• 2019

Fabrication of monolayer is important method for enhancing physical and chemical characteristics such as light shielding and antireflection while maintaining thin film properties. In previous studies, monolayers were fabricated by various methods on small substrates, but processes were complicated and difficult to form monolayers with large area. We used rod coating equipment with a small amount of coating liquid to form a HCP (hexagonal closed packing) coating of PMMA beads on PET(poly(ethylene terephthalate)) substrate with $20cm{\times}20cm$ size. We observed that changes in morphologies of monolayers by using the solvents with different boiling points and vapor pressures, by adapting surfactants on particles and by applying plasma treatment on substrates. The coverage was increased by 20% by optimizing the coating conditions including meniscus of beads, control of the attraction - repulsion forces and surface energy. This result can potentially be applied to optical films and sensors because it is possible to make a uniform and large-scale monolayer in a simple and rapid manner when it is compared to the methods in previous studies.

• Journal of Korean Dental Science
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• v.11 no.2
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• pp.71-81
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• 2018

Purpose: The purpose of this study was to investigate the corrosion behaviors of dental implant alloy after microsized surface modification in electrolytes containing Mn ion. Materials and Methods: $Mn-TiO_2$ coatings were prepared on the Ti-6Al-4V alloy for dental implants using a plasma electrolytic oxidation (PEO) method carried out in electrolytes containing different concentrations of Mn, namely, 0%, 5%, and 20%. Potentiodynamic method was employed to examine the corrosion behaviors, and the alternatingcurrent (AC) impedance behaviors were examined in 0.9% NaCl solution at $36.5^{\circ}C{\pm}1.0^{\circ}C$ using a potentiostat and an electrochemical impedance spectroscope. The potentiodynamic test was performed with a scanning rate of $1.667mV\;s^{-1}$ from -1,500 to 2,000 mV. A frequency range of $10^{-1}$ to $10^5Hz$ was used for the electrochemical impedance spectroscopy (EIS) measurements. The amplitude of the AC signal was 10 mV, and 5 points per decade were used. The morphology and structure of the samples were examined using field-emission scanning electron microscopy and thin-film X-ray diffraction. The elemental analysis was performed using energy-dispersive X-ray spectroscopy. Result: The PEO-treated surface exhibited an irregular pore shape, and the pore size and number of the pores increased with an increase in the Mn concentration. For the PEO-treated surface, a higher corrosion current density ($I_{corr}$) and a lower corrosion potential ($E_{corr}$) was obtained as compared to that of the bulk surface. However, the current density in the passive regions ($I_{pass}$) was found to be more stable for the PEO-treated surface than that of the bulk surface. As the Mn concentration increased, the capacitance values of the outer porous layer and the barrier layer decreased, and the polarization resistance of the barrier layers increased. In the case of the Mn/Ca-P coatings, the corroded surface was found to be covered with corrosion products. Conclusion: It is confirmed that corrosion resistance and polarization resistance of PEO-treated alloy increased as Mn content increased, and PEO-treated surface showed lower current density in the passive region.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.212-218
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• 2019

To investigate the effect of the oxyfluorination of carbon nanotubes (OF-CNTs) on electroless Ni deposition and electromagnetic interference shielding efficiency (EMI SE), CNTs were treated with a mixture of oxygen and fluorine gases and sequentially deposited with nickel. These samples were then manufactured into thin films on a polyimide film to evaluate their EMI SE. The surface chemical property of OF-CNTs was investigated by X-ray photoelectron spectroscopy. From the results of thermogravimetric and scanning electron microscopic analyses, it was found that both the amount of deposited Ni and the surface morphology changed depending on oxyfluorination. Moreover, the Ni-deposited CNTs pretreated with $O_2:F_2=1:9vol%$ exhibited the maximum EMI SE as approximately 19.4 dB at 1 GHz. These results were attributed to the formation of oxygen and fluorine functional groups on the surface of CNTs due to the oxyfluorination, and the functional groups enabled to deposit a suitable amount of Ni and improve the dispersion in the deposited solution.

• Journal of the Korea Convergence Society
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• v.11 no.12
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• pp.97-103
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• 2020

This study sets the solar power system installed and applied to the vertical side wall among the photovoltaic systems in the building as the scope of the research. The theoretical background was considered through literature research as a research method, and the current status, trends and characteristics of solar generator design installed and applied to domestic and foreign vertical side walls were then investigated and analyzed cases. As a result, the importance and necessity of photovoltaic generators, potential for power generation and growth were identified, and positive factors and directions were found for improving aestheticity. Based on this point, we would like to propose expected effects that can be applied to photovoltaic system design installed and applied to vertical side walls in the future, and confirm the direction and significance of the improvement of aesthetic quality of the proposal for development of thin film solar cell design technology using green facade design.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.492-498
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• 2021

This feasibility study evaluated an optically transparent planar antenna using liquid salt-water as the conducting material. The most significant reason behind using liquid salt-water for transparent antenna applications is its excellent average optical transparency (OTav) (> 95% at a salinity of 40 ppt) compared to other typical solid transparent thin-film electrodes, such as indium tin oxide (ITO:> 73%) or multi-layer films (MLF: > 78%). Each conductive arm of the proposed dipole is constructed from a salt-water layer held between two clear planar acrylic layers (��r = 2.61, tan�� = 0.01, OTav > 90%) (acrylic/salt-water/acrylic; ASA) due to surface tension. To examine the electrical and optical properties of the ASA structure, the surface tension was measured to determine the thickness of the salt-water layer that finalized its sheet resistance and OTav. The average gain and efficiency of the antenna were 1.72 dBi and 74%, respectively, in the operating UHF (Ultra high frequency) band (470-771 MHz). Therefore, the proposed antenna can be a good candidate for applications as a transparent planar antenna using salt-water.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.113-119
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• 2022

In order to improve the mechanical reliability of next-generation electronic devices including flexible, wearable devices, a high level of mechanical reliability is required at various flexible joints. Organic adhesive materials such as epoxy for bonding existing polymer substrates inevitably have an increase in the thickness of the joint and involve problems of thermodynamic damage due to repeated deformation and high temperature hardening. Therefore, it is required to develop a low-temperature bonding process to minimize the thickness of the joint and prevent thermal damage for flexible bonding. This study developed flexible laser transmission welding (f-LTW) that allows bonding of flexible substrates with flexibility, robustness, and low thermal damage. Carbon nanotube (CNT) is thin-film coated on a flexible substrate to reduce the thickness of the joint, and a local melt bonding process on the surface of a polymer substrate by heating a CNT dispersion beam laser has been developed. The laser process conditions were constructed to minimize the thermal damage of the substrate and the mechanism of forming a CNT junction with the polymer substrate. In addition, lap shear adhesion test, peel test, and repeated bending experiment were conducted to evaluate the strength and flexibility of the flexible bonding joint.