• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.651-655
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• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• 한국표면공학회지
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• 제33권1호
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• pp.3-9
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• 2000

Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

• 한국표면공학회지
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• 제47권2호
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• pp.93-98
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• 2014

The $Cr_2AlC$ carbides oxidized at 700, 850 and $1000^{\circ}C$ in air from 70 hours up to 360 days. They oxidized according to the reaction; $Cr_2AlC+O_2{\rightarrow}{\alpha}-Al_2O_3+CO(g)$. The scales consisted primarily of the thin, essentially pure $Al_2O_3$ layer and the underlying Al-dissolved $Cr_7C_3$ layer. They grew via the outward diffusion of Al and carbon, and the inward diffusion of oxygen. The oxidation resistance of $Cr_2AlC$ was excellent due to the formation of the protective $Al_2O_3$ layer. Even when $Cr_2AlC$ oxidized at $1000^{\circ}C$ for 360 days, the ${\alpha}-Al_2O_3$ layer was only about 4 ${\mu}m$-thick.

• 대한금속재료학회지
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• 제50권8호
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• 한국근적외분광분석학회:학술대회논문집
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• 한국근적외분광분석학회 2001년도 NIR-2001
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• pp.1259-1259
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• 2001

Meat becomes brown and rancid during storage in the refrigerator and display in the case. Color changes, metmyoglobin formation and lipid oxidation are the important problems in the transportation / distribution of meat and retail display. The freshness of meat is determined by the sense of vision and smell. Since conventional method determining lipid oxidation is time consuming and destructive (it needs to homogenize meat with reagents, filtrate, time for reaction and read optical density using spectroscopy), more rapid and nondestructive technical tools are desired. The objective of this work was to evaluate near-infrared spectroscopy as an analytical tool for determining meat color, metmyoglobin formation and lipid oxidation. in beef, pork and chicken. Semitendinosus and longissimus thoracis muscles from six beef steers, biceps femoris and longissimus thoracis muscles from twelve LWD crossbred pigs, and superficial pectoral muscles from twenty-four broilers were used. About a 5-cm diameter and 1-cm thick sample (20.0g) was cut from the muscle and placed on plastic foam, over-wrapped with PVC film, and displayed under flourescent lights at 4 degrees C. during 10 days for beef and pork or 4 days for chicken. The spectra was measured by NIR systems Model 5500 Spectrophotometer using fiber optic scan at range of 400 - 1100 nm. Data were recorded at 2 nm intervals and 10 scans / 10 sec were averaged for every sample. Data obtained were saved as log 1/Re, where Re is the reflectance energy, and then mathematically transformed to second derivatives to reduce effects of differences in particle size. $L^{*}$, $a^{*}$ and $b^{*}$, and metmyoglobin formation were determined by conventional spectrophotometer using the integrating sphere unit. 2-Thiobarbituric acid reactive substances (TBARS) were measured for lipid oxidation. A multiple linear regression was used to find the equation which would best fit the data. The number of wavelengths used in the equation was selected based on the fewer number compared to the increasing multiple correlation and Decreasing standard error. (omitted)

• ETRI Journal
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• 제26권4호
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• 공업화학
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• 제9권4호
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• pp.536-541
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• 1998

본 연구에서는 시판용 99.8% 금속알루미늄을 수산전해액에서 정전류 방식에 의하여 양극산화하여 다공성 알루미나 막을 제조하는 실험을 행하였다. 전기화학 반응은 표면반응으로 양극산화에 앞서 알루미늄판을 열산화, 화학연마 및 전해연마 등의 전처리를 행하였으며, 반응온도, 전기량, 수산전해질 농도 및 전류밀도의 변화에 따라 양극산화를 시행하여 형성된 다공성 알루미나 막의 세공크기와 분포, 세공밀도 및 막와 두께를 조사하였다. 양극산화에 의해 제조된 다공성 알루미나 막의 기하구조는 직선적인 원통형 세공을 가지며, 세공직경이 45~100 nm 범위로 세공분포가 매우 균일하고, 세공밀도가 $10{\sim}30{\times}10^8$개/$cm^2$로 우수한 세라믹막의 특성을 갖는 한외여과막을 제조할 수 있었다.

• 대한전자공학회논문지SD
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• 제40권8호
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• pp.560-564
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• 2003

본 논문에서는 RTP(rapid thermal process)를 이용한 새로운 산화방법을 고안했으며, 이는 짧은 시간에 다공질 실리콘을 산화시킴으로써 이 기술은 여타 방법에 비해 경제적이고 간편한 방법으로 짧은 시간에 두꺼운 산화막을 성장시킬 수 있는 장점을 가지고 있다. 먼저, 양극반응을 통해 PSL(porous silicon layer)을 형성한 후 이를 저온 산화시킨 후에 급속 열처리 산화공정(RTO: rapid thermal oxidation)를 이용해서 OPSL(oxidized porous silicon layer)을 제조하고, 그 물성 및 전기적 특성을 조사하여, 열 산화로 제작된 OPSL과 그 특성을 비교하였다. 시편의 절연 파괴전압은 약 3.9 MV/cm의 값을 보여 벌크 산화막보다는 적은 값이지만 절연 재료로서는 충분한 값이고, 누설전류는 0 ∼ 50 V의 인가 전압에서 100 ∼ 500 ㎀의 값을 보였다. 그리고, XPS 결과는 RTO 공정 추가가 저온 산화막의 완전 산화에 크게 기여함을 확인하였으며, 저온 산화막의 표면 및 내부에서도 산화반응이 완전하게 이루어졌음을 확인하였다. 이 결과로부터 저온 OPSL을 제조할 때, RTO 공정이 OPSL의 산화 및 치밀화(densification)의 증가에 크게 기여함을 알 수 있었다. 따라서, 이의 방법으로 제조된 OPSL은 저온을 요구하는 공정에서 소자의 절연막, 전기적인 분리층 그리고 실리콘 고주파용 기판 등으로 활용될 수 있을 것으로 보인다.

• 센서학회지
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• 제8권5호
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• pp.421-426
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• 1999

본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.