• Korean Journal of Materials Research
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• v.14 no.4
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

• Corrosion Science and Technology
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• v.19 no.3
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• pp.138-145
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• 2020

Immersion tests of Alloy 600 were conducted in simulated primary water environments of a pressurized water reactor at 325 ℃ for 10, 100, and 1000 h to obtain insight into effects of surface deformation on internal and intergranular (IG) oxidation behavior through precise characterization using various microscopic equipment. Oxidized samples after immersion tests were covered with polyhedral and filamentous oxides. It was found that oxides were abundant in mechanically ground (MG) samples the most. The number density of surface oxides increased with time irrespective of the method of surface finish. IG oxidation occurred in mechanically polished (MP) and chemically polished (CP) samples with thin internal oxidation layers. However, IG oxidation was suppressed with relatively thick internal oxidation layers in MG samples compared to MP and CP samples, suggesting that MG treatment could increase resistance to primary water stress corrosion cracking (PWSCC) from the standpoint of IG oxidation. As a result, appropriate surface treatment for Alloy 600 could prevent oxygen diffusion into grain boundaries, inhibit IG oxidation, and finally induce its high PWSCC resistance.

• Corrosion Science and Technology
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• v.21 no.1
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• pp.53-61
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• 2022

Alloys of Fe-(5.3-29.8)%Mn-(1.1-1.9)%Al-(0.4-0.5)%C were oxidized at 550 ℃ to 650 ℃ for 20 h to understand effects of alloying elements on oxidation. Their oxidation resistance increased with increasing Mn level to a small extent. Their oxidation kinetics changed from parabolic to linear when Mn content was decreased and temperature was increasing. Oxide scales primarily consisted of Fe₂O₃, Mn₂O₃, and MnFe₂O₄ without any protective Al-bearing oxides. During oxidation, Fe, Mn, and a lesser amount of Al diffused outward, while oxygen diffused inward to form internal oxides. Both oxide scales and internal oxides consisted of Fe, Mn, and a small amount of Al. The oxidation of Mn and carbon transformed γ-matrix to α-matrix in the subscale. The oxidation led to the formation of relatively thick oxide scales due to inherently inferior oxidation resistance of alloys and the formation of voids and cracks due to evaporation of manganese, decarburization, and outward diffusion of cations across oxides.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.285-289
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• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.5
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• pp.509-516
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• 2004

High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.1-7
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• 2001

In order to form a uniform oxidation layer of spinel phase on Kovar which helps the strong bonding in Kovar-to-glass sealing, the humidified $N_2/H_2$ was used as an oxidation atmosphere. The oxidation of Kovar was controlled by diffusion mechanism and the activation energy was 31.61 kacl/mol at 500~$800^{\circ}C$. After oxidation at $600^{\circ}C$, the external oxidation layer was below 0.5 $\mu \textrm{m}$ thick. According to TEM analysis, oxidized Kovar was spinel its lattice parameter of 7.9 $\AA$. Oxidation of under $600^{\circ}C$ and in a humidified $N_2/H_2$ atmosphere, Kovar was found to be appropriate for the Kovar-to-glass sealing.

• 연구논문집
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• s.29
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• pp.141-149
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• 1999

Brazing of Fe-Cr-Al alloy was carried out at $1200^{\circ}C$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si-Fe base alloy} and MBF-50 foil (Ni-Cr-Si-B). The effect of boron content on the stability of oxide scale on the brazed joint was investigated by means of cyclic oxidation test performed at $1050^{\circ}C$ and $1200^{\circ}C$. Apparently, the joints brazed with MBF-50 containing boron showed relatively stable oxidation rates compared to boron-free BNi-5 at both temperatures. However, it was considered that the slower weight loss of MBF-50 brazed specimen wasn’t resulted from the low oxidation rate but from the spallation of oxide layer. The oxide layer consisted of thick spinel oxide on the surface and $Al_2 O_3$ internal oxide layer along the interface between mother alloy and braze, the mother alloy was also eroded seriously by the formation of spinel oxides such as $FeCr_2 O_4$ and $NiCr_2 O_4$ on the surface, likely to be induced by the change of oxide forming mechanism due to diffusion of boron from the braze. On the contrary, the joint brazed with BNi-5 showed the good oxidation resistance during the cyclic oxidation test. It seems that the oxidation can be retarded by the formation of stable $Al_2 O_3$ layer at the surface.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.791-795
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• 2003

The oxidation behaviour of Fe-XAl-0.1Y(X= 5, 10, 14 wt.%) alloys were investigated at 1073, 1173 and 1273 K in oxygen/ nitrogen gas atmosphere for 1∼24 hrs using SEM/EDX, XRD and EPMA. The weight changes of Fe-XAl-0.1Y alloys followed the parabolic rate law. Oxidation rates of 10Al and 14Al alloys were ten times lower than that of 5Al alloys. This is attributed to the formations of protective $A1_2$$O_3$oxides on the surface of 10Al and 14Al alloys. The oxidation product scales of the 5Al alloy showed that thick iron oxide scales($Fe_2$$O_3$, $Fe_3$$O_4$) containing porosities formed during early stages of oxidation. With continued oxidation, aluminum oxide was formed at the alloy/scale interface.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.1-10
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• 2018

Anodic oxidation treatment of metals is one of typical surface finishing methods which has been used for improving surface appearance, bioactivity, adhesion with paints and the resistances to corrosion and/or abrasion. This article provides fundamental principle, type and characteristics of the anodic oxidation treatment methods, including anodizing method and plasma electrolytic oxidation (PEO) method. The anodic oxidation can form thick oxide films on the metal surface by electrochemical reactions under the application of electric current and voltage between the working electrode and auxiliary electrode. The anodic oxide films are classified into two types of barrier type and porous type. The porous anodic oxide films include a porous anodizing film containing regular pores, nanotubes and PEO films containing irregular pores with different sizes and shapes. Thickness and defect density of the anodic oxide films are important factors which affect the corrosion resistance of metals. The anodic oxide film thickness is limited by how fast ions can migrate through the anodic oxide film. Defect density in the anodic oxide film is dependent upon alloying elements and second-phase particles in the alloys. In this article, the principle and mechanisms of formation and growth of anodic oxide films on metals are described.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.