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Implementation of High-Quality Si Integrated Passive Devices using Thick Oxidation/Cu-BCB Process and Their RF Performance  

김동욱 ((주)에스원 기술연구소)
정인호 ((주)텔레포스)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.15, no.5, 2004 , pp. 509-516 More about this Journal
Abstract
High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.
Keywords
Integrated Passive Devices; Cu-BCB Process; Thick Oxidation; Low Pass Filter; Balun;
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