• 전기학회논문지
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• 제59권9호
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• pp.1615-1620
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• 2010

A thin film thermoelectric cooler for COB direct assembly was proposed and the COB cooler structure was modeled by electrical equivalent circuit by using SPICE model of thermoelectric devices. The embedded cooler attached between the die chip and metal plate can offer the possibility of thin film active cooling for the COB direct assembly. We proposed a driving method of TEC by using pulse width modulation technique. The optimum power to the TEC is simulated by using a SPICE model of thermoelectric device and passive components representing thermal resistance and capacitance. The measured and simulated results offer the possibility of thin film active cooling for the COB direct assembly.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Nuclear Engineering and Technology
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• 제53권4호
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• pp.1304-1310
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• 2021

Two-phase flow, especially gas-liquid two-phase flow, has a wide application in industrial field. The diagnosis of two-phase flow parameters, which directly determine the flow and heat transfer characteristics, plays an important role in providing the design reference and ensuring the security of online operation of two-phase flow system. Computer tomography (CT) is a good way to diagnose such parameters with imaging method. This paper has proposed a novel image reconstruction method for thermal neutron CT of two-phase flow with improved simulated annealing (ISA) algorithm, which makes full use of the prior information of two-phase flow and the advantage of stochastic searching algorithm. The reconstruction results demonstrate that its reconstruction accuracy is much higher than that of the reconstruction algorithm based on weighted total difference minimization with soft-threshold filtering (WTDM-STF). The proposed method can also be applied to other types of two-phase flow CT modalities (such as X(𝛄)-ray, capacitance, resistance and ultrasound).

• Carbon letters
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• 제15권1호
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• pp.38-44
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• 2014

This paper reports the effect of adding reduced graphene oxide (RGO) as a conductive material to the composition of an electrode for capacitive deionization (CDI), a process to remove salt from water using ionic adsorption and desorption driven by external applied voltage. RGO can be synthesized in an inexpensive way by the reduction and exfoliation of GO, and removing the oxygen-containing groups and recovering a conjugated structure. GO powder can be obtained from the modification of Hummers method and reduced into RGO using a thermal method. The physical and electrochemical characteristics of RGO material were evaluated and its desalination performance was tested with a CDI unit cell with a potentiostat and conductivity meter, by varying the applied voltage and feed rate of the salt solution. The performance of RGO was compared to graphite as a conductive material in a CDI electrode. The result showed RGO can increase the capacitance, reduce the equivalent series resistance, and improve the electrosorption capacity of CDI electrode.

• 한국재료학회지
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• 제21권8호
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• pp.468-475
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• 2011

[ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

• International Journal of Precision Engineering and Manufacturing
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• 제9권4호
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• pp.3-10
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• 2008

Micro-electrical discharge machining (micro-EDM) is an effective method for machining all types of conductive materials regardless of hardness. Since micro-EDM is an electro-thermal process, the energy supplied by the pulse generator is an important factor in determining the effectiveness of the process. In this study, an investigation was conducted on the micro-EDM of tungsten carbide (WC) to compare the performance of transistor and resistance/capacitance (RC) pulse generators in obtaining the best quality micro-hole. The performance was measured by the machining time, material removal rate, relative tool wear ratio, surface quality, and dimensional accuracy. The RC generator was more suited for minimizing the pulse energy, which is a requirement for fabricating micro-parts. The smaller-sized debris formed by the low-discharge energy of RC micro-EDM could be easily flushed away from the machined zone, resulting in a surface free of burrs and resolidified molten metal. The RC generator also required much less time to obtain the same quality micro-hole in WC. Therefore, RC generators are better suited for fabricating micro-structures, producing good surface quality and better dimensional accuracy than the transistor generators, despite their higher relative tool wear ratio.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• 마이크로전자및패키징학회지
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• 제6권4호
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• pp.1-7
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• 1999

MCM-D 기판에 수동소자를 내장시키는 공정을 개발하였다. MCM-D 기판은 Cu/감광성 BCB를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/cu를 각각 1000$\AA$/3000$\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 um Cu를 형성하였으며, BCB 층에 신뢰성있는 비아형성을 위하여 BCB의 공정특성과 $C_2F_6$를 사용한 플라즈마 cleaning영향을 AES로 분석하였다. 이 실험에서 제작한 MCM-D 기판은 절연막과 금속배선 층이 각각 5개, 4개 층으로 구성되는데 저항은 2번째 절연막 위에 thermal evaporator 방식으로 NiCr을 600$\AA$증착하여 시트저항이 21 $\Omega$/sq가 되게 형성하였고. 인덕터는 coplanar 구조로 3, 4번째 금속배선층에 형성하였으며, 커패시터는 절연막으로 PECVD $Si_3N_4$를 900$\AA$증착한 후 1, 2번째 금속배선층에 형성하여 88nF/$\textrm {cm}^2$의 커패시턴스를 얻었다. 이 공정은 PECVD $Si_3N_4$와 thermal evaporation NiCr 공정을 이용함으로써 기존의 반도체 공정을 이용하여 MCM-D 기판에 수동소자를 안정적으로 내장시킬 수 있었다.