• Carbon letters
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• v.12 no.1
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• pp.8-15
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• 2011

We study the relationships between the thermal emissivity of nuclear graphites (IG-110, PCEA, IG-430 and NBG-18) and their surface structural change by oxidation using scanning electron microscope and X-ray diffraction (XRD). The nonoxidized (0% weight loss) specimen had the surface covered with glassy materials and the 5% and 10% oxidized specimens, however, showed high roughness of the surface without glassy materials. During oxidation the binder materials were oxidized first and then graphitic filler particles were subsequently oxidized. The 002 interlayer spacings of the non-oxidized and the oxidized specimens were about $3.38{\sim}3.39{\AA}$. There was a slight change in crystallite size after oxidation compared to the nonoxidized specimens. It was difficult to find a relationship between the thermal emissivity and the structural parameters obtained from the XRD analysis.

• Preventive Nutrition and Food Science
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• v.7 no.2
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• pp.179-183
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• 2002

Lycopene as a natural antioxidant may provide protection against a broad range of epithelial cancers and chronic diseases. Lycopene concentrate extracted from tomatoes can be used as functional food. Lycopene would undergo degradation via isomerization and oxidation under different processing conditions, which impact its bioactivity and reduce the fuuctionality for health benefits. Heat and light induce lycopene oxidation and isomerization of all-trans form to cis form. The effects of thermal treatment and light irradiation on the stability of lycopene were determined. Results have shown that lycopene stability depends on the extent of oxidation and isomerization. Cir-isomers are less stable than trans-isomers. The level of cis-isomers increased as treatment time increased but only for a short period during the beginning of the treatment. The major effect of thermal treatment and light irradiation was a significant decrease in the total lycopene content. A true assessment of health benefits of lycopene concentrate depends on the lycopene content and the composition of all trans-isomers and cia-isomers.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.16-22
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• 2008

Anodizing to form oxide layers on the pure titanium was performed in the electrolyte containing 1.5M $H_2SO_4$, 0.2M $H_3PO_4$, and 2.5wt.% $CuSO_4$ using the ac-biased arc anodizing technique. Titanium oxide layers anodized with different applied voltages, voltage-elevating rates, and anodizing times were investigated. In addition, thermal oxidation test under an atmospheric environment for the arc-anodized specimens was carried out. The thickness of oxide layers were not affected by the voltage-elevating rates, but increased slightly with the increase of anodizing times. The thickness of oxide layers were increased with the increase of voltages, and increased remarkably in the condition of 200V. The size and number of the pore observed in the center of the porous cell were decreased with increase of applied voltage. From the result of thermal oxidation test, it revealed that oxide layer formed by arc anodizing more effective to prevent oxidation of pure titanium.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.753-758
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• 1994

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.67-70
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• 1996

In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed the three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. The main effect of deformation at the coner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stress in the oxide. In the island structure which is the structure mostly covered with nitride and a coner is opened to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opened to oxide and a coner is covered with nitride, however, oxidation is increased at the coner by tensile stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.168-173
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• 2020

To analyze and describe the behavior and mechanisms occurring in the thermal oxidation process of AlN, bulk AlN single crystals were thermally treated with different temperatures. As a result, it was confirmed that full-scale oxidation of bulk AlN and growth of Al-oxide occurred from the temperature of 800℃, which confirmed that the weight% of O elements tended to increase while the N elements decreased with increasing the temperature. In the case of thermal treatment at 900℃, the grown Al-oxides were merged with neighboring Al-oxides and began to form α-Al₂O₃ poly-crystals. During thermal treatment at the temperature of 1000℃, hexagonal pyramidal shaped poly-crystalline α-Al₂O₃ was clearly observed. Through the X-ray diffraction pattern analysis, the changes of surface crystal structure according to the temperature of bulk AlN were investigated in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.36-42
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• 2020

In order to investigate the effect of the oxidation process on thermal properties of the pitch, the oxidized pitch was prepared by changing the oxidation temperature. Thermal properties of the pitch were analyzed using thermogravimetric analysis (TGA), and it divided into three sections as A (25~100 ℃), B (250~550 ℃) and C (550~800 ℃) by derivative thermogravimetry (DTG) graph behavior. In the A section, the was reduced because the moisture contained in the pitch was removed. In the B section, as the oxidation temperature increased, the thermal stability of the pitch is improved. Because the degree of aromaticity and molecular weight of the pitch increased with increasing oxidation temperature. In contrast, the results of the C section were shown opposite of B section. Because the introduced C-OH, C-O-C, and C=O bonds were decomposed, and the resulting oxygen compounds induced the combustion reaction of the pitch.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.408-413
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• 2008

In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

• Carbon letters
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• v.6 no.2
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• pp.71-78
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• 2005

Anti-oxidation coatings are the key technique for carbon/carbon (C/C) composites used as the thermal structural materials. The microstructure and oxidation behavior of several kinds of high-performance ceramic coatings for C/C composites prepared in Northwestern Polytechnical University were introduced in this paper. It showed that the ceramic coatings such as SiC, Si-$MoSi_2$, SiC-$MoSi_2$, $Al_2O_3$-mullite-SiC and SiC/yttrium silicate/glass coatings possessed excellent oxidation resistance at high temperatures, and some of these coatings were characterized with excellent thermal shock resistance. The SiC-$MoSi_2$ coating system has the best oxidation protective property, which can effectively protect C/C composites from oxidation up to 1973 K. In addition, the protection and failure reasons of some coatings at high temperature were also provided.