Stress Effect of Thermal Oxidation

열 산화막 성장의 스트레스 의존성에 관한 연구

  • 윤상호 (인하대학교 공과대학 전자재료공학과 반도체 및 박막 기술 연구소) ;
  • 이제희 (인하대학교 공과대학 전자재료공학과 반도체 및 박막 기술 연구소) ;
  • 원태영 (인하대학교 공과대학 전자재료공학과 반도체 및 박막 기술 연구소)
  • Published : 1996.11.01

Abstract

In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed the three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. The main effect of deformation at the coner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stress in the oxide. In the island structure which is the structure mostly covered with nitride and a coner is opened to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opened to oxide and a coner is covered with nitride, however, oxidation is increased at the coner by tensile stress.

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