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Fabrication of Ultrathin Silicon Oxide Layer by Low Pressure Rapid Thermal Oxidation and Remote Plasma Oxidation  

Ko, Cheon Kwang (Department of Chemical Engineering, Kangwon National University)
Lee, Won Gyu (Department of Chemical Engineering, Kangwon National University)
Publication Information
Korean Chemical Engineering Research / v.46, no.2, 2008 , pp. 408-413 More about this Journal
Abstract
In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.
Keywords
Silicon Oxide; Rapid Thermal Oxidation; Remote Plasma Oxidation;
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