• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.131-131
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• 2013

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. The data clearly show that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ~2,700 cm2V-1s-1 at room temperature, superior to common graphene converted from solid carbon.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.249-249
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• 2013

Surface-enhanced Raman spectroscopy (SERS) is a sensitive approach to detect and to identify a variety of molecules. To enhance the Raman signal, optimization of the gap between nanostructures is quite important. One-dimensional materials such as nanowires, nanotubes, and nanograsses have great potential to be used in SERS due to their unique sizes and shape dependent characteristics. In this study we investigate a simple way to fabricate SERS substrates based on randomly grown copper oxide (CuO) nanowires. CuO nanograss is fabricated on pre-cleaned Cu foils. Cu oxidized in an ammonium ambient solution of 2.5 M NaOH and 0.1 M $(NH_4)_2S_2O_8$ at $4^{\circ}C$ for 10, 30, and 60 minutes. Then, Cu(OH)2 nanostructures are formed and dried at $180^{\circ}C$ for 2 h. With the drying process, the Cu(OH)2 nanostructure is transformed to CuO nanograss by dehydration reaction. CuO nanograss are grown randomly on Cu foil with the average length of 10 ${\mu}m$ and the average diameter of a 100 nm. CuO nanograsses are covered by Ag with various thicknesses from 10 to 30 nm using a thermal evaporator. Then, we immerse uncoated and Ag coated CuO nanowire samples of various oxidation times in a 0.001M methanol-based 4-mercaptopyridine (4-Mpy) in order to evaluate SERS enhancement. Raman shift and SERS enhancement are measured using a Raman spectrometer (Horiba, LabRAM ARAMIS Spectrometer) with the laser wavelength of 532 nm. Raman scattering is believed to be enhanced by the interaction between CuO nanograss and Ag island film. The gaps between Ag covered CuO nanograsses are diverse from <10 nm at the bottom to ~200 nm at the top of nanograsses. SERS signal are improved where the gaps are minimized to near 10s of nanometers. There are many spots that provide sufficiently narrow gap between the structures on randomly grown CuO nanograss surface. Then we may find optimal enhancement of Raman signal using the mapping data of average results. Fabrication of CuO nanograss based on a solution method is relatively simple and fast so this result can potentially provide a path toward cost effective fabrication of SERS substrate for sensing applications.

• Korean Journal of Food Science and Technology
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• v.50 no.3
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• pp.339-343
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• 2018

Effects of different drying processes, such as hot air drying (HA), superheated steam with hot air drying (SHS/HA), and superheated steam with far infrared radiation (SHS/FIR), on the properties of cherry tomatoes (Solanum lycopersicum var. cerasiforme) were studied. Characteristics of dried cherry tomatoes were determined by examining the water content, internal microstructure, and rehydration capacity under different drying processes. Moreover, ascorbic acid (AA) and lycopene levels were also measured to evaluate thermal damage caused by drying. Cherry tomatoes dried using both SHS/HA and SHS/FIR had water content and water activity similar to those of intermediate moisture food, indicating partial dehydration after combined drying processes. Although AA and lycopene levels decreased drastically after drying, tomatoes dried using SHS/FIR showed the lowest losses of AA and lycopene among samples. Cherry tomatoes dried using SHS/FIR showed a less compact internal cell structure than that of cherry tomatoes dried using HA and SHS/HA, resulting in the highest rehydration capacity. These results suggest that a combined drying process such as SHS/FIR is more effective than conventional hot air drying for the production of partially dried cherry tomatoes with improved quality attributes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.21-26
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• 2016

This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.

• Journal of Welding and Joining
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• v.28 no.3
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• pp.92-98
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• 2010

Ferritic stainless steels, which have relatively small thermal expansion coefficient and excellent corrosion resistance, are increasingly being used in vehicle manufacturing, in order to increase the lifetime of exhaust manifold parts. But, there are limits on use because of the problem related to cosmetic resistance, corrosions of condensation and high temperature salt etc. So, Aluminum-coated stainless steel instead of ferritic stainless steel are utilized in these parts due to the improved properties. In this investigation, Al-8wt% Si alloy coated 409L ferritic stainless steel was used as the base metal during Gas Tungsten Arc(GTA) welding. The effects of coated layer on the microstructure and hardness were investigated. Full penetration was obtained, when the welding current was higher than 90A and the welding speed was lower than 0.52m/min. Grain size was the largest in fusion zone and decreased from near HAZ to base metal. As welding speed increased, grain size of fusion zone decreased, and there was no big change in HAZ. Hardness had a peak value in the fusion zone and decreased from the bond line to the base metal. The highest hardness in the fusion zone resulted from the fine re-precipitation of the coarse TiN and Ti(C, N) existed in the base metal during melting and solidification process and the presence of fine $Al_2O_3$ and $SiO_2$ formed by the migration of the elements, Al and Si, from the melted coating layer into the fusion zone.

• Journal of the Korean Solar Energy Society
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• v.31 no.2
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• pp.82-88
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• 2011

The artificial increase in the solar intensity incident on solar cells using lenses or mirrors can allow solar cells to generate equivalent power with a lower cost. There are two types of concentration optics for solar energy conversion. One is to use mirrors, and the other is to use Fresnel lenses. The gains that can be achieved with a Fresnel lens or a parabolic mirror are compared. The result showed the gains are comparable and the two configurations were developed competitively. In application areas of Fresnel lenses as solar concentrators, several variations of design were devised and tested. Some PV systems still use commercially available flat Fresnel lenses as concentrators. A convex linear Fresnel lens to improve the concentration ratio and the efficiency is devised and flat linear Fresnel lens in thermal energy collection is utilized. In this study, we designed and optimized flat Fresnel lens and the 'light pipe' to develop 500X concentrated solar PV system. In the process, we compare the transmission efficiencies according to groove types. We performed rigorous ray tracing simulation of the flat Fresnel lenses. The computer aided simulation showed the 'grooves in case' has the better efficiency than that of 'grooves out case'. Based on the ray-trace results we designed and manufactured sample Fresnel lenses. The optical performance were measured and compared with ray-trace results. Finally, the optical efficiency was measured to be above 75%. All the design and manufacturing were performed based on that InGaP/InGaAs/Ge triple junction solar cell is used to convert the photon energy to electrical power. Field test will be made and analyzed in the near future.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.46 no.1
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• pp.31-42
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• 2020

Horse fat is known to be an effective ingredient in Asia, and the horse fat itself, which is mixed with other ingredients at the additive level, is often sold as a finished product. In this case, physical properties of the horse fat raw material are important. Many horse fats produced in Korea (Jeju) have low temperature stability, so if not stored at low temperatures, segregation may occur. In the case of Japanese horse fat, it is partially hydrogenated or is used the solid phase as the horse fat by separating the liquid phase and the solid phase that is harder and more stable than the horse fat of Jeju. In this study, the physical properties were tested to improve the temperature stability even without the partial hydrogenation process of Jeju horse fat. Various oil gelling agents were used in the study. Results confirmed that the physical properties of the hydroxystearic acid added Jeju horse fat were improved. In addition, stability evaluations at temperatures of 25 ℃, 40 ℃, 45 ℃ and flow behavior evaluations at temperatures of 25 ℃, 30 ℃, 40 ℃ were performed for Jeju horse fat with hydroxystearic acid, 100% Jeju horse fat, and 100% Japanese horse fat. Results showed that the Jeju horse fat improved in flow behavior by adding hydroxystearic acid similar to that of Japanese horse fat. In addition, when the crystal state was observed under a microscope, the thermal stability was improved by decreasing the size of the needle-type crystals with the addition of hydroxystearic acid. Jeju horse fat containing hydroxystearic acid was found to have no physical problems even when stored at room temperature for a long time.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.