• Title/Summary/Keyword: Tetra ethyl ortho silicate

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Property of Concrete Surface layer Using Self-Cleaning Silicate Concrete Impregnant (Self-Cleaning 실리케이트계 표면보호제를 적용한 콘크리트 표층부의 특성)

  • Song, Hun;Lee, Jong-Kyu;Chu, Yong-Sik
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.1 no.3
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    • pp.233-239
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    • 2013
  • This study is interested in manufacturing the self-cleaning silicate concrete surface impregnant including tetra ethyl ortho silicate, lithium silicate for the repair of the exposed concrete surface and the color concrete requiring the advanced function in view of the concrete appearance. The concrete surface layer change and static contact angel was tested for the review of application. The result of this study shows that the effective silicate is tetra ethyl ortho silicate and lithium silicate. The adhesion in tension is satisfied with performance requirement of KS standard but the reinforcement of concrete substrate is slight. So, The self-cleaning silicate concrete impregnant of this study is more desirable for the improvement of durability rather than the reinforcement.

Surface Layer Change of Concrete with Concrete Impregnant (침투성 함침제에 따른 콘크리트 표층부의 개질특성)

  • Song, Hun;Shin, Hyeong-UK;Chu, Yong-Sik;Lee, Jong-Kyu
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2013.11a
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    • pp.200-201
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    • 2013
  • This study is interested in manufacturing the concrete surface impregnants including tetra ethyl ortho silicate, alkali silicate for the repair of the exposed concrete and the color concrete requiring the advanced function in view of the concrete appearance. The surface layer change and porosity properties was tested for the review of application. The result of this study show that the effective silicate are tetra ethyl ortho silicate and alkali silicate t. The adhesion in tension is slightly increased but the reinforcement of concrete substrate is slight. So, the concrete impregnant of this study is more desirable for the improvement of durability rather than the reinforcement.

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Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon;Seo, Yong-Jin;Ko, Pil-Ju;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.164-168
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    • 2005
  • Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

CMP Slurry Induction Properties of Silicate Oxides Deposited on Silicon Wafer (실리콘 웨이퍼위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성)

  • 김상용;서용진;이우선;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.131-136
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    • 2000
  • We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

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Effect of Mixed Abrasive Slurry (MAS) on the Tetra-Ethyl Ortho-Silicate (TEOS) Film (혼합 연마제가 TEOS 막에 미치는 영향)

  • Lee, Young-Kyun;Han, Sang-Jun;Park, Sung-Woo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.541-541
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    • 2008
  • 반도체 소자가 차세대 초미세 공정 기술 도입의 가속화를 통해 고속화 및 고집적화 되어 감에 따라 나노(Nano) 크기의 회로 선폭 미세화를 극복하고자 최적의 CMP (Chemical Mechanical Polishing) 공정이 요구되어지고 있다. 이처럼 CMP 공정이 반도체 제조 공정에 적용됨으로써 공정 마진 확보에 진일보 하였으나 CMP 장비의 공정 조건, 슬러리의 종류, 연마패드의 종류 등에 의해 CMP 성능이 결정된다. 특히 슬러리는 연마 공정의 성능에 중요한 영향을 미치는 요인이다. 고가의 슬러리가 차지하는 비중이 40% 이상을 넘고 있어 슬러리 원액의 소모량을 줄이기 위한 연구들이 현재 활발히 진행되고 있다. 본 연구에서는 새로운 연마제의 특성을 알아보기 위해 탈이온수(De-ionized water; DIW) 에 $CeO_2$, 연마제를 첨가한 후 분산시간에 따른 연마 특성과 AFM, EDX, XRD, TEM분석을 통해 그 가능성을 알아보았다.

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Formation of ultra-shallow $p^+-n$ junction through the control of ion implantation-induced defects in silicon substrate (이온 주입 공정시 발생한 실리콘 내 결함의 제어를 통한 $p^+-n$ 초 저접합 형성 방법)

  • 이길호;김종철
    • Journal of the Korean Vacuum Society
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    • v.6 no.4
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    • pp.326-336
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    • 1997
  • From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

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The Effects of Catalyst on the Hydrolysis and Polymerization of TEOS (Tetra Ethyl Ortho Silicate의 수화 및 중합에 미치는 촉매의 영향)

  • ;;S. Sakka
    • Journal of the Korean Ceramic Society
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    • v.27 no.1
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    • pp.86-90
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    • 1990
  • The shape and characteristics of polymers in hydrolzed and polymerized sol were affected by the types of catalysts. In our research, the contents of water and catalysts were constant and the types of catalyst were varied. In the case of acid catalysts, polymers in sol were linear and spinnable. The shapes of polymer were affected by the types of anions in acid catalysts. In the case of catalyst having anions, F, Cl, in the same period, the effects were similar. But in the case of base catalysts polymers were rigid rod like and not spinnable.

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Minimum Pollution of Silicate Oxide in the CMP Process (CMP공정에 의한 실리케이트 산화막의 오염 최소화)

  • Lee, Woo-Sun;Kim, Sang-Yang;Choi, Gun-Woo;Cho, Jun-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.171-174
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    • 2000
  • We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), $O_3$ boro-phospho silicate giass( $O_3$-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished $O_3$-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.

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Silica Glass Preparation by The Sol-Gel Process and The Effects of Glycerol as a DCCA (졸-겔법에 의한 실리카 유리의 제조와 DCCA로서의 Glycerol의 영향)

  • 이경희;이병하;이헌식;오부근
    • Journal of the Korean Ceramic Society
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    • v.25 no.5
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    • pp.479-487
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    • 1988
  • In this study we studied the function of Glycerol as a DCCA(Drying Control Chemical Additives) in the preparation of silica bulk glas through Sol-Gel method. We used TEOS(Tetra Ethyl Ortho Silicate) and maintained the mixing ratio of TEOS : H2O : EtOH : HCI as 1 : 4 : 4 : 0.0007(mol) and varied glycerol input quantity from 0.1vol% considering the ethnaol input quantity as 100vol%. We investigated the changes from Sol-Gel Synthetic solutions to the glass using DT-TG, FT-IR and other instruments. The results obtained from this experiment showed that the dried gels made from the synthetic solutions containing 0.1-1.0vol% of glycerol were easily heat-treated up to 85$0^{\circ}C$ so that transparant bulk silica glass was prepared.

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Characteristics Of XeCl Excimer-Laser Annealed Insulator (XeCl EXCIMER-LASER 이용하여 열처리된 절연막의 특성 분석)

  • Park, C.M.;Yoo, J.S.;Choi, H.S.;Han, M.K.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1440-1442
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    • 1996
  • The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

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