• 한국소음진동공학회논문집
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• 제18권2호
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• pp.185-191
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• 2008

Optimal damping layout of the constrained viscoelastic damping layer on beam is identified with temperatures by using a gradient-based numerical search algorithm. An optimal design problem is defined in order to determine the constrained damping layer configuration. A finite element formulation is introduced to model the constrained layer damping beam. The four-parameter fractional derivative model and the Arrhenius shift factor are used to describe dynamic characteristics of viscoelastic material with respect to frequency and temperature. Frequency-dependent complex-valued eigenvalue problems are solved by using a simple re-substitution algorithm in order to obtain the loss factor of each mode and responses of the structure. The results of the numerical example show that the proposed method can reduce frequency responses of beam at peaks only by reconfiguring the layout of constrained damping layer within a limited weight constraint.

• 에너지공학
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• 제21권2호
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• pp.138-143
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• 2012

본 연구는 냉장고 가스켓 주위에서 시간변화에 따른 온도를 측정하여 비정상상태 온도 특성을 규명하기 위해 수행되었다. 가스켓 주위 냉장고 내외부에서의 시간변화 온도 측정을 살펴보면 냉장고의 가동에 따라 주기적인 온도 변화를 관찰할 수 있다. 측정된 온도결과를 보면 열전달 전산해석을 수행하였던 이전의 연구들이 경계조건을 적절히 사용하지 않았기 때문에 이전의 연구결과와 많은 차이를 보여주고 있다. 본 연구에서는 적합한 열전달 전산해석 수행을 위해 실험을 통한 온도 분포를 도출하고 가스켓 주위의 냉장고 내외부의 정확한 열전달 경계조건을 제시하는 것을 목적으로 하여 수행하였다.

• 한국정밀공학회지
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• 제13권12호
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• pp.70-77
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• 1996

Fatigue tests were carried out at high temperature on a Cr-Mo-V steel in order to assess the fatigue life of components used in power plants. The characteristics of high temperature fatigue were divided in terms of cycle-dependent fatigue and time-dependent fatigue, each crack propagation rate was examined with respect to fatigue J-integral range, .DELTA. J$_{f}$and creep J-integral range, .DELTA. J$_{c}$. The fatigue life was evaluated by analysis of J-integral value at the crack tip with a dimensional finite element method. The results obtained from the present study are summarized as follows : The propagation characteristics of high temperature fatigue cracks are determined by .DELTA. J$_{f}$for the PP(tensile plasticity-compressive plasticity deformation) and PC(tensile plasticity - compressive creep deformation) stress waveform types, and by .DELTA. J$_{c}$for the CP(tensile creep- compressive plasticity deformation) stress waveform type. The crack propagation law of high temperature fatigue is obtained by analysis of J-integral value at the crack tip using the finite element method and applied to examine crack propagation behavior. The fatigue life is evaluated using the results of analysis by the finite element method. The predicted life and the actual life are close, within a factor of 2.f 2.f 2.

• 전기의세계
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• 제28권9호
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• 대한전기학회논문지
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• 제36권6호
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• pp.418-423
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• 1987

In the course of the investigation to the field dependent electrical conducation mechanism in polypropylene, an abnormal conduction phenomena such as voltage controlled negative resistance charateristics has been observed at the junction of two regions charateriged by schottky effect and space charge effect respectively. This abnormal characteristics was observed initially about 110MV / m of the field strength and at 25 , however, the field strength where it observed was decreased and the apparent feature of negative charateristics was less pronounced as increasing ambient temperature. Although the observations of analogous characteristics in other materials such as polyethylene, polymethylemethactylate, and polystyrene have already been reported together with plausible explanation by Toureille and others, however, it was found that the proposed concept by those authors was little use to the present observations for quantitative discussions. Accordingly we tried to adapt another conceptual discussion based on Gibbons's formulation pertaing to the saturatio trend of the field dependent drift velocity of carriers towards the thermal velocity corresponding to the ambient temperature so that the quantitative explanatio on the observed facts has been succeeded to some estent of reasonable acceptance.

• 한국진공학회지
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• 제1권1호
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• Journal of Biosystems Engineering
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• 제11권1호
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• pp.52-63
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• 1986

This study was performed to find out drying characteristics and develop drying model for the design of an efficient dryer or drying system of red peper. The basic model which describes drying phenomenon of red pepper was firstly established, and drying tests were conducted at 14-different drying conditions. In this test, the effects of drying air temperature and relative humidity on the rate of drying were undertaken. Finally, a new drying model based on these experimental results was developed to describe the drying characteristics of red pepper. The results from this study may be summarized as follows. 1. Drying constant of the basic model established from Lewis' experimental model and diffusion equation was theoretically deduced as a function of moisture content and inner-temperature of red pepper. 2. From the results of drying tests, drying air temperature was found to have the greatest effect on the rate of drying. However, the effect of temperature was small for the condition of high relative humidity, and for low temperature, the effect of relative humidity was found to be large even though the range of relative humidity was low. 3. Modified Henderson equation was found to be better than Chung equation as the EMC model for the estimation of the equilibrium moisture content of red Pepper. 4. Constant-rate drying period did not exist in the red pepper drying test. And falling-rate drying period was divided into three distinct phases. Drying rate was dependent on the moisture content, the inner-temperature of red pepper and the change of physical property due to drying. 5. Drying constant increased with decrease of free moisture content, but it decreased at the end of the drying period. Also, drying constant was dependent on the drying air temperature and relative humidity. 6. The new drying model developed in this study was found to be most suitable in describing the drying characteristics of red pepper. Therefore, it may be concluded that drying time could be accurately estimated by the new drying model.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.62-65
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• 2009

In this paper, the temperature characteristics of full CMOS FLL(frequency locked loop) re analyzed. The FLL circuit is used to generate an output signal that tracks an input efference signal. The locking time of FLL is short compared to PLL(phase locked loop) circuit because the output signal of FLL is synchronized only in frequency. Also the FLL s designed to allow the circuit to be fully integrated. The FLL circuit is composed two VCs, two buffers, a VCO and two frequency dividers. The temperature variation of frequency divider, FVC and buffer cancelled because the circuit structure. is the same and he temperature effect is cancelled by the comparator. Simulation results are shown to illustrate the performance of the designed FLL circuit with temperature.