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http://dx.doi.org/10.4313/JKEM.2003.16.9.816

Effects of Hole-Injection Buffer Layer in Organic Light-Emitting Diodes  

정동희 (광운대학교 전기공학과)
김상걸 (홍익대학교 기초과학과)
오현석 (광운대학교 전기공학과)
홍진웅 (광운대학교 전기공학과)
이준웅 (한국전기전자재료학회)
김영식 (홍익대학교 기초과학과)
김태완 (홍익대학교 기초과학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.9, 2003 , pp. 816-825 More about this Journal
Abstract
Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.
Keywords
Organic light-emitting diodes; Buffer layer; Current-voltage characteristics; Luminous efficiency; RGB color spectrum.;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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