Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Characteristics of High Temperature Oxide Thin Film Using Dichlorosilane Gas

Dichlorosilane Gas를 이용한 High Temperature Oxide Thin Film의 특성

  • 이승석 (현대전자 반도체연구소) ;
  • 이석희 (현대전자 반도체연구소) ;
  • 김종철 (현대전자 반도체연구소) ;
  • 박헌섭 (현대전자 반도체연구소) ;
  • 오계환 (현대전자 반도체연구소)
  • Published : 1992.02.01
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Abstract

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

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