• Title/Summary/Keyword: Temperature dependence of dielectric constant

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Dependence of Ozone Generation in a Micro Dielectric Barrier Discharge on Dielectric Material and Micro Gap Length

  • Sakoda, Tatsuya;Sung, Youl-Moon
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.5
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    • pp.201-206
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    • 2004
  • In order to investigate the optimum conditions for the effective ozone formation in a dielectric barrier discharge, measurements of ozone concentration were carried out for various conditions such as the gap length, the dielectric material and the operating gas. It was found that the optimum discharge conditions differed exceedingly in the types of operating gases and dielectric materials. In dry air, dielectric material with low dielectric constant and thermal conductivity, which might contribute to the restriction of the gas temperature rise in the discharge region, proved effective in obtaining both high ozone yield and concentration. The optimum gap length was considered to be in the range of 600-800 mm. In oxygen, using a quartz glass disk as a dielectric material, the required condition to obtain the high ozone yield and concentration was expanded.

Dielectric Properties of Sr(Mg1/3Nb1/3)O3-Ba(Mg1/3Nb2/3)O3-Ba(Mg1/3Ta2/3)O3 Solid Solution (Sr(Mg1/3Nb1/3)O3-Ba(Mg1/3Nb2/3)O3-Ba(Mg1/3Ta2/3)O3고용체의 유전성 (복합 Perovskite구조를 갖는 세라믹스의 유전성))

  • 윤기현;정범준;김응수;강동헌
    • Journal of the Korean Ceramic Society
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    • v.25 no.6
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    • pp.639-644
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    • 1988
  • The physical and dielectric properties of complex perovskite compound Sr(Mg1/3Nb1/3)O3-Ba(Mg1/3Nb2/3)O3-Ba(Mg1/3Ta2/3)O3(BMT) system were investigated as a function of composition. As the mole ratio of BMN was increased, lattice parameter ratio c/a was slightly increased, and density was increased in SMN-BMN system. However, in BMN-BMT system, lattice parameter ratio c/a and density were decreased with increasing the mole ratio of BMN. Dielectric constant, dielectric loss at $25^{\circ}C$ and 100kHz, and temperature coefficient of resonant frequency, the dependence of temperature in capacitance were increased with increasing the mole ratio of BMN in SMN-BMN-BMT system. These result can be explained according to the degree of order=disorder and dielectric constant.

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Effect of Sintering Temperature on the Dielectric and Piezoelectric Properties of (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics (소성 온도가 (Na,K,Li)(Nb,Sb,Ta)O3 세라믹스의 유전 및 압전 특성에 미치는 영향)

  • Kim, You-Seok;Yoo, Ju-Hyun;Hong, Jae-Il;Lee, Jie-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.11
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    • pp.806-809
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    • 2013
  • In this study, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.10\;wt%Bi_2O_3+0.35\;wt%B_2O_3$ ceramics were prepared by conventional soild-state sintering process. The specimens were sintered at temperature range from $1,060^{\circ}C$ to $1,100^{\circ}C$. XRD (X-ray diffractron), SEM (scanning electron microscope) were used to analyze the crystal structure and microstructural sproperties of specimens. And also, $T_{O-T}$, TC were observed by the mesurement of temperature dependence of dielectric constant. Excellect physical properties of the piezoelectric constant $d_{33}$= 170 pC/N, electromechanical coupling factor kp= 0.312, Tc= $315^{\circ}C$ were obtained, respectively, from the specimen sintered at $1,080^{\circ}C$.

Temperature Dependence and Dielectric Properties in Semiconducting Shield of Power Cable (전력케이블용 반도전층의 유전특성과 온도의존성)

  • Lee, Kwan-Woo;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.137-139
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    • 2001
  • In this paper, to obtain the material properties through the semiconducting shields of 22kV XLPE power cable. the water absorption TGA DSC and dielectric properties were respectively measured between semiconducting shield and XLPE. Especially, dielectric properties were measured with temperature variation. Above result, the water absorption was 1200 ppm and the ratio of carbon black was 40% in semiconducting shields. The dielectric constant was $10^3{\sim}10^5$, $tan{\delta}$ was $10^2{\sim}10^3{\Omega}cm$ and volume resistivity was $280{\sim}2.8{\times}10^3$.

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Fabrication and Electrical Propertie of the Ferroelectric (K0.5Na0.5)NbO3 (강유전체(K0.5Na0.5)NbO3의 제조 및 전기적 특성 분석)

  • Hyun, June Won;Byun, Jaeduk
    • Journal of the Korean institute of surface engineering
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    • v.50 no.4
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    • pp.277-281
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    • 2017
  • Ferroelectric ceramics are broadly used for various industrial applications. In this research, the lead-free ferroelectric ceramics of $(K_{0.5}Na_{0.5})NbO_3$ was fabricated by using the solid state synthesis. The $(K_{0.5}Na_{0.5})NbO_3$ pellets were sintered at 1200, 1150 and $1100^{\circ}C$ for 4 hours in air atmosphere. Field-emission scanning electron microscopy (FE-SEM) characterization of the sintered KNN ceramics revealed surface morphology and grain size. And we used the X-ray diffraction (XRD) for measuring the sample crystal phase. Temperature dependence of the dielectric constant was measured by using an LCR meter. The sintered at $1150^{\circ}C$ for 4 hours sample has a highest dielectric constant 6011 at Curie temperature ($T_C$) and dense structure with $2.33{\mu}m$ grain size.

Oxygen Pressure Dependence of Structural and Electrical Characteristics of PLZT Thin Films Prepared by a PLD (PLD 법으로 제작된 PLZT 박막의 산소압에 따른 구조 및 전기적 특성)

  • Jang, Nak-Won
    • Journal of Advanced Marine Engineering and Technology
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    • v.30 no.8
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    • pp.927-933
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    • 2006
  • The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

Dielectric and Piezoelectric Characteristics of $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ Ceramics with the variations of Sr Substitution (Sr 치환에 따른 $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ 세라믹스의 유전 및 압전특성)

  • Oh, Dong-On;Ryu, Ju-Hyun;Park, Chang-Yub;Yoon, Hyun-Sang;Jeong, Yeong-Ho;Jung, Moon-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.660-663
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    • 2003
  • In this Study, lead-free $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ system ceramics were fabricated with the variations of Sr substitution and their dielectric and piezoelectric characteristics were investigated. With the increase of Sr substitution, dielectric constant increased linearly and Curie temperature decreased slightly. Also, the temperature dependence curve of dielectric constant was moved to left-ward. At 4mol% Sr substitution, Tc of 292, kp of 34.03%, kt of 45.32% and ${\epsilon}r$ of 868 were shown, respectively.

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Investigations of Temperature Effect on the Conduction Mechanism of Electrical Conductivity of Copolymer/Carbon Black Composite

  • El Hasnaoui, M.;Kreit, L.;Costa, L.C.;Achour, M.E.
    • Applied Microscopy
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    • v.47 no.3
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    • pp.121-125
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    • 2017
  • This study deals the prediction of temperature effect on low-frequency dispersion of alternating current (AC) conductivity spectra of composite materials based on copolymer reinforced with carbon black (CB) particles. A sample of ethylene butylacrylate loaded with 13% of CB particles were prepared and investigated using the impedance spectroscopy representation in the frequency range from 40 Hz to 0.1 MHz and temperature range from $20^{\circ}C$ to $125^{\circ}C$. The dielectric constant, ${\varepsilon}^{\prime}$, and dielectric losses, ${\varepsilon}^{{\prime}{\prime}}$, were found to decrease with increasing frequency. The frequency dependence of the AC conductivity follows the universal power law with a large deviation in the high frequency region, the positive temperature coefficient in resistivity effect has been observed below the melting temperature which makes this composite potentially remarkable for industrial applications.

A Study on the Dielectric Properties and Electrical Conduction of PVDF Thin Films by Physical Vapor Deposition (진공 증착법으로 제작한 PVDF 박막의 유전 특성과 전기전도도에 대한 연구)

  • Gang, Seong-Jun;Lee, Won-Jae;Jang, Dong-Hun;Yun, Yeong-Seop
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.5
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    • pp.9-15
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    • 2000
  • The 3 ${\mu}{\textrm}{m}$-thick PVDF (polyvinylidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR spectrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks are detected at 509.45 [$cm^{-1}$ /] and 1273.6 [$cm^{-1}$ /]in the FT-IR spectrum, we are confirmed that the $\beta$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200 Hz to 7000 Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy ( $\Delta$H) obtained from temperature dependence of dielectric loss is 21.64 ㎉/mole. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

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Ferroelectricity of the $Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$ based Ceramics ($Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$계 세라믹스의 강유전성)

  • 김진수;김소정;김호기;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.149-152
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    • 1997
  • High-power piezoelectric materials are being developed for applications such as actuators and ultrasonic motors. In this paper, ferroelectric property of iron-doped 0.57 (Sc$_{1}$2//Nb$_{1}$2/)O$_3$-0.43 PbTiO$_3$. which is the morphotropic phase boundary composition for the PSN-PT system, was investigated. The maximum dielectric constant ( $\varepsilon$$_{33}$/$\varepsilon$$_{0}$ = 2551) and the minimum dielectric loss(tan $\delta$ = 0.51 %) at room temperature were obtained at 01. wt% and 0.3 wt% of iron additions. With additions of the Fe$_2$O$_3$ the electromechanical coupling factor of radial mode k$_{p}$ and the piezoelectric coefficient d$_{33}$ were slightly decreased, on the other hand the mechanical quality factor was increased significantly. The highest mechanical quality factor (Qm= 297) was obtained at 0.3 wt% Fe$_2$O$_3$, which is 4.4 times larger than that of pure 0.57 PSN-0.43PT ceramics. The temperature dependence of the dielectric constant and dielectic loss was observed between 2$0^{\circ}C$ and 35$0^{\circ}C$ .X> .X> .

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