• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.123-126
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• 1998

We derived an equation showing the temperature dependence of the zero-dispersion wavelength and measured the temperature dependence of the zero dispersion wavelength using four-wave mixing in dispersion shifted fibers in the range of $22^{\circ}C-59^{\circ}C$ From the experimental results, we found that the zero-dispersion wavelength is increased as the temperature around DSF increases and its temperature dependence is 0.032 nm/$^{\circ}C$. Also, the calculated behavior of FWM efficiency coincided with the experimental result.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.181-186
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• 1999

The diffusion of oxygen atoms on tungsten (110) surface is studied by comparison of experiment results and recent calculations. It has been suggested that the thermodynamic factor which is inversely proportional to be compressibility has strong temperature dependence which may cause non-Arrhenius behavior of diffusion coefficient. Recent experiments, however, indicate effectively no temperature dependence of this factor and support the view that non-Arrhenius behavior originates from the dynamic factor rather than the thermodynamic factor. Discrepancies in coverage dependence of physical quantities between theory and experiment are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.146-152
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• 2014

The temperature dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.362-365
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• 2015

Silica encapsulated ZnSe quantum dots (QDs) were prepared by employing two microemulsion systems: AOT/water/cyclohexane microemulsions containing ZnSe quantum dots with NP5/water/cyclohexane microemulsions containing tetraethylorthosilicate (TEOS). Using this method, cubic zinc blende nanoparticles (3 nm in diameter) were synthesized and encapsulated by silica nanoparticles (20 nm in diameter). The temperature dependence of photoluminescence (PL) for silica-encapsulated ZnSe QDs was investigated to evaluate this material as a temperature sensor media. The fluorescence emission intensity of silica-encapsulated ZnSe nanoparticles (NPs) was decreased with an increase of ambient temperature over the range from $30^{\circ}C$ to $60^{\circ}C$ and a linear relationship between the temperature and the emission intensity was observed. In addition, the temperature dependence of PL intensity for silica-encapsulated ZnSe NPs showed a reversible pattern on ambient temperature. A reversible temperature dependence of the luminescence combined with its insensitivity toward quenching by oxygen due to silica coating established this material as an attractive media for temperature sensor applications.

• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.5
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• pp.206-214
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• 1996

Because of the wide variety of the composite materials, inherent variability in properties, and complex temperature and strain rate dependence, large strain behavior of these materials has not been well characterized. Large strain behavior under uniaxial tension is characterized over a range of temperatures and strain rates, and a modified simple linear viscoelastic model is fit to the observed data. Of particular importance is the strain rate and temperature dependence of these composites, and it is the primary focus of this study. The strain rate and temperature dependence is then used to predict limiting tensile strains, based on Marciniak imperfection theory. Excellent correlation was obtained between model and experiment and the results are summarized in maps of forming limit as a function of strain rate and temperature.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.604-609
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• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1213-1217
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• 2008

Poling is an important process in fabricating PZT ceramic devices such as filters and resonators and activates piezoelectricity to sintered PZT ceramics. Tolerance of the operating frequency of these devices is tightly required in applications. And a factor to attribute the tolerance is the temperature dependence of the resonance frequency of PZT ceramics. In this paper the relationship of poling strength and temperature dependence of resonance frequency of PZT specimens was studied. The $Pb(Zr_{0.53}Ti_{0.47})O_3$ ceramics were fabricated and the poling strengths were chosen to be 0.5, 1.5, 2.5 and 3.5 [kV/mm]. The dielectric constant of the specimen poled in poling strength 0.5 [kV/mm] was less than that of unpoled specimen and the specimen poled in higher electric field had the higher dielectric constant. (002) peak in X-ray diffraction patterns of the specimens increased as poling strength increased. And the change of resonance frequency of the specimens according to the variation of temperature was measured. Resonance frequency of all specimens increased as the temperature increased. The specimen poled in higher electric field had the smaller positive temperature coefficient of resonance frequency. The effect that temperature coefficient of resonance frequency becomes smaller is obtained when Zr mole in PZT composition equation increase. Controlling the poling strength is believed to be a method to adjust the temperature stability of resonance frequency of the PZT ceramic devices.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.104-105
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• 2012

The temperature dependence of the effective magnetic anisotropy constant K(T) of ferrite nanoparticles is obtained based on the measurements of SQUID magnetometry. For this end, a very simple but intuitive and direct method for determining the temperature dependence of anisotropy constant K(T) in nanoparticles is introduced in this study. The anisotropy constant at a given temperature is determined by associating the particle size distribution f(r) with the anisotropy energy barrier distribution $f_A(T)$. In order to estimate the particle size distribution f(r), the first quadrant part of the hysteresis loop is fitted to the classical Langevin function weight-averaged with the log?normal distribution, slightly modified from the original Chantrell's distribution function. In order to get an anisotropy energy barrier distribution $f_A(T)$, the temperature dependence of magnetization decay $M_{TD}$ of the sample is measured. For this measurement, the sample is cooled from room temperature to 5 K in a magnetic field of 100 G. Then the applied field is turned off and the remanent magnetization is measured on stepwise increasing the temperature. And the energy barrier distribution $f_A(T)$ is obtained by differentiating the magnetization decay curve at any temperature. It decreases with increasing temperature and finally vanishes when all the particles in the sample are unblocked. As a next step, a relation between r and $T_B$ is determined from the particle size distribution f(r) and the anisotropy energy barrier distribution $f_A(T)$. Under the simple assumption that the superparamagnetic fraction of cumulative area in particle size distribution at a temperature is equal to the fraction of anisotropy energy barrier overcome at that temperature in the anisotropy energy barrier distribution, we can get a relation between r and $T_B$, from which the temperature dependence of the magnetic anisotropy constant was determined, as is represented in the inset of Fig. 1. Substituting the values of r and $T_B$ into the $N{\acute{e}}el$-Arrhenius equation with the attempt time fixed to $10^{-9}s$ and measuring time being 100 s which is suitable for conventional magnetic measurement, the anisotropy constant K(T) is estimated as a function of temperature (Fig. 1). As an example, the resultant effective magnetic anisotropy constant K(T) of manganese ferrite decreases with increasing temperature from $8.5{\times}10^4J/m^3$ at 5 K to $0.35{\times}10^4J/m^3$ at 125 K. The reported value for K in the literatures is $0.25{\times}10^4J/m^3$. The anisotropy constant at low temperature region is far more than one order of magnitude larger than that at 125 K, indicative of the effects of inter?particle interaction, which is more pronounced for smaller particles.