JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs

  • Sun, Wookyung (Department of Electronic Engineering, Ewha Womans University) ;
  • Shin, Hyungsoon (Department of Electronic Engineering, Ewha Womans University)
  • Received : 2013.08.10
  • Accepted : 2014.02.09
  • Published : 2014.04.30
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Abstract

The temperature dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

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References

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