• Bulletin of the Korean Chemical Society
• /
• v.34 no.2
• /
• pp.649-652
• /
• 2013

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.1
• /
• pp.1-6
• /
• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• Current Photovoltaic Research
• /
• v.5 no.2
• /
• pp.59-62
• /
• 2017

Surface texturing is affected the uniformity and size of pyramid with saw mark defect density. To analysis the influence of the saw mark defect density, we textured various si wafer. When the texturing process proceeds without the saw mark removal, silicon wafer of low-saw mark defect density showed small pyramid size of $3.5{\mu}m$ with the lowest average value of the reflectance of 10.6%. When texturing carried out after removal of the saw mark using the TMAH solution, we obtained a reflectance of about 11% and the large pyramid size of $5{\mu}m$. As a result, saw mark wafers showed a better pyramid structure than saw mark-free wafer. This result showed that saw mark can take place more smooth etching by the KOH solution and saw mark-free wafer is determined to be a factor that have a higher reflectance and a large pyramid.

• Journal of the Korean institute of surface engineering
• /
• v.28 no.1
• /
• pp.55-63
• /
• 1995

Alkaline solutions such as $NH_4$OH, choline and TMAH (($CH_3$)$_4$NOH) have been introduced in semiconductor wet processing of silicon wafers to control ionic and particulate impurities following etching in acidic solutions. These chemicals usually mixed with hydrogen peroxide and/or surfactants to control the etch rate of silicon. The highest etch rate was observed in $NH_4$OH solutions at a pH in alkaline solutions. It indicates that the etch rate depends on the content of $OH^{-}$ as well as cations of alkaline solutions. STM/AFM techniques were used to characterize the effect of alkaline solutions on silicon surface roughness. In SC1 (mixture of $NH_4$OH : $H_2$$O_2$ : $H_2$O) solutions, the reduction of the ammonium hydroxide proportion from 1 to 0.1 decreased the surface roughness ($R_{rms}$) from 6.4 to $0.8\AA$. The addition of $H_2$$O_2$ and surfactants to choline and TMAH reduced the values of $R_{p-v}$ and $R_{rms}$ significantly. $H_2$$_O2$ and surfactants added in alkaline solutions passivate bare silicon surfaces by the oxidation and adsorption, respectively. The passivation of surfaces in alkaline solutions resulted in lower etch rate of silicon thereby provided smoother surfaces.s.ces.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.21-24
• /
• 2004

Pseudo-MOSFET의 제작을 위해서는 표면 실리콘 층의 식각 공정이 필요하며, 공정의 간편성으로 인해 주로 RIE(Reactive Ion Etching)를 사용하고 있다. 하지만, RE 공정 도중 발생하는 Plasma에 의해서 SOI 층이 손상을 받게 되고 이 영향으로 소자의 특성이 열화 될 가능성이 있다. 이러한 특성의 열화를 확인하기 위하여 소자 제작을 위한 표면 실리콘 층의 식각을 RIE 공정과 TMAH 용액을 이용한 습식 식각을 각각 행하여 그 특성을 비교한 결과, 건식 식각된 시편에서 계면상태 밀도의 증가, 이동도의 감소 등 특성 열화 현상이 현저히 나타났다. 이러한 RIE 공정 중 발생하는 손상을 제거하기 위하여 저온 열처리를 하였으며 그 결과 $400^{\circ}C$ $N_2$ 분위기에서 4시간 동안 열처리를 하여 습식 식각된 시편과 동일한 특성을 가지게 할 수 있었다.

• Journal of the Korean Applied Science and Technology
• /
• v.27 no.2
• /
• pp.123-128
• /
• 2010

The continuous transesterification of mixed fat was done on the plug flow reactor packed with the static mixers. The transesterification using 0.5 wt% KOH, 0.8 wt% TMAH and mixed catalyst[40 v/v% KOH(0.5 wt%)+60 v/v% TMAH(0.8 wt%)] was conducted with the changes of molar ratios, weight percentage of beef, flow rates and number of static mixer's elements at $65^{\circ}C$. The overall conversion of mixed fat at 1:8 molar ratio, 50 wt% of beef and 24 of static mixer's elements increased until 0.7mL/min of flow rate. The overall conversion of mixed fat showed 96% at those conditions. So, the optimum operating conditions on tublar reactor were 1:8 molar ratio, 50 wt% of beef, 0.7 mL/min of flow rate and 24 of static mixer' s elements.

• Korean Journal of Metals and Materials
• /
• v.46 no.6
• /
• pp.377-381
• /
• 2008

Prism sheet of LCD BLU which depends on supply from Japan and U.S.A was studied by using Si anisotropic etching and injection molding technologies. First, the prism sheet was patterned on Si wafer through photolithography, and the best conditions of Si etching were determined through etching Si wafer with TMAH to obtain straight optimized zigzag patterns, and a cross pattern to provide light diffusion and concurrent focusing. The etch rate of TMAH was concluded to be constant for $25wt%-70^{\circ}C$ condition. Ni stamp of prism sheet was made by electrodeposition using patterned Si wafer, normal or fast H/C(Heating/Cooling) injections were carried out to fabricate prism sheet. It was known that fast H/C injection could fabricate prism sheet more accurately than normal injection. Zigzag patterns and the cross pattern showed higher transmissivity than the straight patterns because of light diffusion through diagonal direction. The fast H/C injection for zigzag patterns showed lower transmissivity than normal injection because there occurred more light diffusion through precise injection patterns, but the fast H/C injection for straight patterns showed only refraction without diffusion, causing lower transmissivity than normal injection.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.617-622
• /
• 2010

We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.55-59
• /
• 2018

In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.32.2-32.2
• /
• 2011

반도체 생산공정에서 CMP (Chemical-mechanical planarization) 공정은 우수한 전기전도성 재료인 Cu의 사용과 다층구조의 소자를 형성하기 위해서 도입되었으며, 최근 소자의 집적도가 증가함에 따라 CMP 공정 비중은 점점 높아지고 있다. Cu CMP 공정에서 연마제인 슬러리는 금속 표면과의 물리적 화학적 반응을 동시에 사용하여 표면을 연마하게 되며, 연마특성을 향상시키기 위해 산화제, 부식방지제, 분산제 및 다양한 계면활성제가 첨가된다. 하지만 슬러리는 Cu 표면을 평탄화하는 동시에 오염입자, 유기오염물, 스크레치, 표면부식 등을 발생시키며 결과적으로 소자의 결함을 야기시킨다. 특히 부식방지제로 사용되는 BTA (Benzotriazole)은 Cu CMP 공정 중 Cu-BTA 형태로 표면에 흡착되어 오염원으로 작용하며 입자오염을 증가시시고 건조공정에서 물반점 등의 표면 결함을 발생시킨다. 이러한 문제점을 해결하기 위해 Cu 표면에서 식각과 부식반응을 최소화하며, 오염입자 제거 및 유기오염물을 효과적으로 제거하기 위한 Post-CMP 세정 공정과 세정액 개발이 요구된다. 본 연구에서는 오염입자 및 유기물 제거와 동시에 표면 거칠기와 부식현상을 제어할 수 있는 post Cu CMP 세정액을 개발 평가하였다. 오염입자 및 유기오염물을 제거하기 위해서 염기성 용액인 TMAH 사용하였으며, Cu 이온을 용해할 수 있는 Chelating agent와 표면 부식을 억제하는 부식 방지제를 사용하여 세정액을 합성하였다. 접촉각 측정과 FESEM(field Emission Scanning Electron Microscope) 분석을 통하여 CMP 공정에서 발생하는 유기오염물과 오염입자의 흡착과 제거를 확인하였으며 Cu 웨이퍼 세정 전후의 표면 거칠기의 변화와 식각량을 AFM(Atomic Force Microscope)과 4-point probe를 사용하여 각각 평가하였다. 또한 세정액 내에서의 연마입자의 zeta-potential을 측정 및 조절하여 세정력을 향상시켰다. 개발된 세정액과 Cu 표면에서의 화학반응 및 부식방지력은 potentiostat를 이용한 전기화학 분석법을 통해서 chelating agent와 부식방지제의 농도를 최적화 시켰다. 개발된 세정액을 적용함으로써 Cu-BTA 형태의 유기오염물과 오염입자들이 효과적으로 제거됨을 확인하였다.